40362
Abstract: 200W AMPLIFIER 40410 40319 2N5298 2N4036 2N4037 2N5038 2N5240 "70 mhz" driver Amplifier
Text: 2N4036 FAMILY [p-n-pl silicon [cont'd] f f = 60 MHz min; P j up to 7 W max 40615 Driver, 12-W True Comp. Univ. Amplifier 40406 40410 Input, 70 W Class AB Amplifier Complementary driver for 70 W Class AB Am plifier Driver, 40-W Quasi-Comp Univ. Amplifier
|
OCR Scan
|
2N4036
-100A
2N5298
2n5293
O-220
2n5294
2n5295
2n5296
40362
200W AMPLIFIER
40410
40319
2N4037
2N5038
2N5240
"70 mhz" driver Amplifier
|
PDF
|
transistor A1837
Abstract: a1837 2SA1837 a1837 datasheet 2SC4793 toshiba A1837 A1837 transistor
Text: 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC4793 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics
|
Original
|
2SA1837
2SC4793
2-10R1A
transistor A1837
a1837
2SA1837
a1837 datasheet
2SC4793
toshiba A1837
A1837 transistor
|
PDF
|
DIODE in 5060
Abstract: CMM2306 CMM2306-AJ CMM2306-AJ-000T
Text: CMM2306 Product Specifications January 1996 1 of 4 800 to 2700 MHz Broadband Driver Amplifier Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply □ Input and Output Matched to S0Q, DC Blocked
|
OCR Scan
|
CMM2306
CMM2306
1T74503
DIODE in 5060
CMM2306-AJ
CMM2306-AJ-000T
|
PDF
|
A1932
Abstract: 2SA1932 2SC5174
Text: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
2SA1932
2SC5174
A1932
2SA1932
2SC5174
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC4793 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics
|
Original
|
2SA1837
2SC4793
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
2SA1932
2SC5174
|
PDF
|
transistor A1837
Abstract: a1837 2SA1837 toshiba A1837 2SA1837 Toshiba A1837 TOSHIBA a1837 datasheet 2SC4793
Text: 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC4793 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics
|
Original
|
2SA1837
2SC4793
transistor A1837
a1837
2SA1837
toshiba A1837
2SA1837 Toshiba
A1837 TOSHIBA
a1837 datasheet
2SC4793
|
PDF
|
transistor a1837
Abstract: a1837 toshiba A1837 A1837 transistor
Text: 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC4793 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics
|
Original
|
2SA1837
2SC4793
2-10R1A
transistor a1837
a1837
toshiba A1837
A1837 transistor
|
PDF
|
A1932
Abstract: transistor 2SA1932 2SA1932 2SC5174
Text: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
2SA1932
2SC5174
2-10T1A
A1932
transistor 2SA1932
2SA1932
2SC5174
|
PDF
|
A1932
Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft
Text: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
2SA1932
2SC5174
2-10T1A
A1932
TOSHIBA Transistor Silicon PNP Epitaxial Type Ft
|
PDF
|
DIODE in 5060
Abstract: CMM2306 CMM2306-AJ CMM2306-AJ-000T
Text: CMM2306 Product Specifications January 1996 800 to 2700 MHz Broadband Driver Amplifier 1 of 4 Features ❏ +17.5 dBm Output Power ❏ Low Current: 70 mA, Typ. ❏ 800 – 2700 MHz Operation ❏ Single +3V to +6V Supply ❏ Input and Output Matched to 50Ω, DC Blocked
|
Original
|
CMM2306
DIODE in 5060
CMM2306
CMM2306-AJ
CMM2306-AJ-000T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 800-2700 MHz Broadband Driver Amplifier August 2007 - Rev 07-Aug-07 CMM2306-AJ Features Functional Block Diagram +17.5 dBm Output Power Low Current: 70 mA, Typ. 800-2700 MHz Operation Single +3V to +6V Supply Input and Output Matched to 50 , DC Blocked Low-Cost SOIC-8 Plastic Package
|
Original
|
07-Aug-07
CMM2306-AJ
CMM2306-AJ
CMM2306-AJ-000T
|
PDF
|
CMM2306-AJ-0G0T
Abstract: CMM2306-AJ CMM2306-AJ-0G00 PB-CMM2306-AJ-0000
Text: 800-2700 MHz Broadband Driver Amplifier December 2007 - Rev 29-Dec-07 CMM2306-AJ Features Functional Block Diagram +17.5 dBm Output Power Low Current: 70 mA, Typ. 800-2700 MHz Operation Single +3V to +6V Supply Input and Output Matched to 50 , DC Blocked Low-Cost SOIC-8 Plastic Package
|
Original
|
29-Dec-07
CMM2306-AJ
CMM2306-AJ
CMM2306-AJ-0G00
CMM2306-AJ-0G0T
PB-CMM2306-AJ-0000
CMM2306-AJ-0G0T
CMM2306-AJ-0G00
PB-CMM2306-AJ-0000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • 1R7MS03 G0Q04Ô0 35b ■ : « i .* r o f « i r Product Specifications January 1996 CMM2306 SOOto 2700 MHz Broadband Driver Amplifier 1 o f 4 Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply
|
OCR Scan
|
1R7MS03
G0Q04Ã
CMM2306
|
PDF
|
|
|
HBFP0450
Abstract: HBFP-0450 LL1608-FH2N7S MGA-52543 Silicon Bipolar Transistor HBFP-0450 ADS MODEL 20NF2 agilent semiconductor
Text: A 400, 900 and 1800 MHz Buffer/Driver Amplifier using the Agilent HBFP-0450 Silicon Bipolar Transistor Application Note 1206 Introduction Agilent Technologies’ HBFP-0450 is a high performance isolated collector silicon bipolar transistor housed in 4-lead SC-70 SOT-343
|
Original
|
HBFP-0450
SC-70
OT-343)
HBFP-0450
HBFP0450
5968-4957E
LL1608-FH2N7S
MGA-52543
Silicon Bipolar Transistor
HBFP-0450 ADS MODEL
20NF2
agilent semiconductor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers
|
Original
|
BFR106
AEC-Q101
|
PDF
|
HBFP-0450 ADS MODEL
Abstract: HBFP-0450 LL1608-FH2N7S MGA-52543 microstripline resistor chip
Text: A 400, 900 and 1800 MHz Buffer/Driver Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1206 Introduction Avago Technologies’ HBFP-0450 is a high performance isolated collector silicon bipolar transistor housed in 4-lead SC-70 SOT-343 surface mount plastic package.
|
Original
|
HBFP-0450
HBFP-0450
SC-70
OT-343)
5968-4957E
HBFP-0450 ADS MODEL
LL1608-FH2N7S
MGA-52543
microstripline
resistor chip
|
PDF
|
FDH400
Abstract: MSK645 Transistor 645
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER 645 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 70 Vpp Output Voltage 150 MHz Typical Bandwidth Transition Times Typically <2.5 nS
|
Original
|
ISO-9001
MIL-PRF-38534
150pF
MSK645
MSK645
Mil-PRF-38534
FDH400
Transistor 645
|
PDF
|
C804
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER 645 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 70 Vpp Output Voltage 150 MHz Typical Bandwidth Transition Times Typically <3.0 nS
|
Original
|
ISO-9001
MIL-PRF-38534
150pF
MSK645
C804
|
PDF
|
celeritek
Abstract: CMM2305 CMM2305-AR-0000 CMM2305-AR-000T PB-CMM2305-AR-000
Text: CMM2305 800 to 2700 MHz Broadband Driver Amplifier P re lim in a ry P ro d u c t In fo r m a tio n D ecem ber 1997 1 of 2 Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply □ Input and Output Matched to 50Q, DC
|
OCR Scan
|
CMM2305
CMM2305
celeritek
CMM2305-AR-0000
CMM2305-AR-000T
PB-CMM2305-AR-000
|
PDF
|
FDH400
Abstract: MSK645
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER 645 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 70 Vpp Output Voltage 150 MHz Typical Bandwidth Transition Times Typically <3.0 nS
|
Original
|
ISO-9001
MIL-PRF-38534
150pF
MSK645
MSK645
Mil-PRF-38534
FDH400
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DESC M.S.KENNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER 645 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-STD-1772 CERTIFIED FEATURES: 70 Vpp Output Voltage 150 MHz Typical Bandwidth Transition Times Typically <2.5 nS
|
Original
|
ISO-9001
MIL-STD-1772
150pF
MSK645
Mil-H-38534
|
PDF
|
CMM2305
Abstract: CMM2305-AR-0000 CMM2305-AR-000T PB-CMM2305-AR-000
Text: CMM2305 800 tO 2700 MHz . Broadband Driver Amplifier P r e lim in a r y P r o d u c t In f o r m a r o n 1997 1 cf 2 December Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply □ Input and Output Matched to 50i2, DC
|
OCR Scan
|
CMM2305
CMM2305
CMM2305-AR-0000
CMM2305-AR-000T
PB-CMM2305-AR-000
|
PDF
|
0-80 unf datasheet
Abstract: "27 mhz" driver
Text: A d v a n c e d R e l e a s e F E AT U R E S MODEL NO. CAMD6 254 27 - 33 MHz SMA Connectors 30 MHz RF Driver Amplifier AMP 2.92 2.620 .35 2.23 .150 .150 .380 MAX., TYP .36 J2 OUTPUT .400 .70 .62 .620 1.32 1.020 J1 INPUT GND .360 RF OUT J2 RF IN J1 -25V .200 MAX
|
Original
|
|
PDF
|
