thyristor k 202 russian
Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Text: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)
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SS15BL
M6x15
M6x10
thyristor k 202 russian
russian diode
kp20a 600v
kp20a
ZP20A
optothyristor
KP300A
KP200A
T143-630 SCR
zp5a
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SPT402
Abstract: oz 9981 SPT402A SPT402B 25000lb
Text: SPT402 125mm THYRIST OR THYRISTO 5000V 4600A The SPT402 thyristor features a multi-arm involute gate which can be triggered with 5 - 10 A gate pulses by means of an integrated pilot gate or directly fired using 50 - 100A gate pulses. The involute pattern affords full area conduction in minimum time while
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SPT402
125mm
SPT402A
SPT402B
00A/us
000A/us
000-4000A/us
115oC
oz 9981
SPT402A
SPT402B
25000lb
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oz 9981
Abstract: THYRISTOR di/dt 100A/uS SPT402A SPT402B
Text: SPT402 125mm THYRIST OR THYRISTOR 5000V 4600A SPCO The SPT402 thyristor features a multi-arm involute gate which can be triggered with 5 - 10 A gate pulses by means of an integrated pilot gate or directly fired using 50 - 100A gate pulses. The involute pattern affords full area conduction in minimum time while
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SPT402
125mm
SPT402A
SPT402B
00A/us
000A/us
000-4000A/us
115oC
oz 9981
THYRISTOR di/dt 100A/uS
SPT402A
SPT402B
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n719
Abstract: T2551 D 711 N 58 T D1181S T1329N T188F SD1408
Text: Clamping Force kN and Disc Diameter (mm) Phase control thyristors Typ kN mm Phase control thyristors Typ kN mm T T T T T T T T T T T T T T T T 178 N 201 N 218 N 268 N 298 N 308 N 348 N 358 N 378 N 380 N 388 N 398 N 399 N 458 N 459 N 501 N 2,5 - 5 7 - 12
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1 928 498 054
Abstract: 1509-50 DIODE 1474 D428N D798N T1189N T1509N T1989N T298N T358N
Text: B2H - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 360 V 1400 V 450 V 1600 V - + Anzahl KB pro Anzahl Dioden Anzahl Thyristoren Schalt. pro KB pro KB 2 4 2 4 4 4 4 4 4 4 2 4 2 4 4
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T1078N
Abstract: T1258N T398N T828N
Text: W3C - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 60 Veff 125 Veff 180 Veff 200 V 400 V 600 V ~ ~ ~ ~ ~ ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L
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T398N
T828N
T1258N
T1078N
T1078N
T1258N
T398N
T828N
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T1059N
Abstract: T1589N T308N T458N T459N T709N
Text: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 141 203 247 310 362 470 562 662 754 910 132 191 235 294 345 448 534 629
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168K0
T1059N
T1589N
T308N
T458N
T459N
T709N
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thyristor s 236
Abstract: T1078N T1258N T398N T828N
Text: W3C - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 60 Veff 125 Veff 180 Veff 200 V 400 V 600 V ~ ~ ~ ~ ~ ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L
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T398N
T828N
T1258N
T1078N
thyristor s 236
T1078N
T1258N
T398N
T828N
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T1059N
Abstract: T1589N T308N T458N T459N T709N
Text: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 141 203 247 310 362 470 562 662 754 910 132 191 235 294 345 448 534 629
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168suant
T1059N
T1589N
T308N
T458N
T459N
T709N
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Untitled
Abstract: No abstract text available
Text: Date: 31.03.2005 IXYS Data Sheet Issue: 1 Thyristor/Diode Modules M## 600 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2000 600-20io1W 600-20io1W 600-20io1W 600-20io1W 600-20io1W 600-20io1W 600-20io1W 2200 600-22io1W 600-22io1W 600-22io1W
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600-20io1W
600-22io1W
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vl 5682
Abstract: 20340 D1029N D748N T1059N T1589N T308N T458N T459N T709N
Text: ~ B6H - Schaltung Anschlußspannung n. VDE 0558 VDRM/RRM 930 V 2200 V - Kühlblöcke für Luftselbstkühlung Satzstrom Id [°C] [A] 35 40 45 50 55 60 141 203 247 310 362 470 562 662 754 910 132 191 235 294 345 448 534 629 713 856 124 180 223 278 329 425
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D748N
D1029N
D2209N
T308N
T458N
vl 5682
20340
D1029N
D748N
T1059N
T1589N
T308N
T458N
T459N
T709N
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921 Thyristor
Abstract: T1078N T1258N T398N T828N "921" Thyristor
Text: M1C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 60 Veff 125 Veff 180 Veff 25 V 200 V 55 V 400 V 80 V 600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L
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T398N
T828N
T1078N
T1258N
1078N
921 Thyristor
T1078N
T1258N
T398N
T828N
"921" Thyristor
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8239
Abstract: 921 Thyristor D1049N D428N D4401N D660N D798N
Text: M2 - Schaltung ~ M2K ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 180 V 1400 V 220 V 1600 V 240 V 1800 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L
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D428N
D660N
D798N
D1049N
8239
921 Thyristor
D1049N
D428N
D4401N
D660N
D798N
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DISC THYRISTOR
Abstract: D170U D1201 D170S single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt
Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.
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D170S
D170U
DISC THYRISTOR
D170U
D1201
single phase bridge rectifier pin configuration
"921" Thyristor
diode gto
EUPEC Thyristor
V4500
4500 igbt
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sfe232
Abstract: No abstract text available
Text: Preliminary Data SOLI» STATE DEVICES INC eet 15E D |ò3bt.011 o o o n a o fi I S F S 2 3 2 6 THRU S F S 2 3 2 9 SSDI T'a^-13 1.6 A M P SILICON CÜNTRÜLED RECTIFIER 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 200 - 400 V O L T S
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oms 450
Abstract: C771 C771LA C771LB C771LC C771LD C771LE C771LM C771LN C771LS
Text: INVERTER THYRISTOR ' C771 7 7 m m /3 0 0 0 V /1 0 0 u s Type C771 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure. It
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77mm/3000V/100us
6RT215
00V/US
oms 450
C771
C771LA
C771LB
C771LC
C771LD
C771LE
C771LM
C771LN
C771LS
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Untitled
Abstract: No abstract text available
Text: Gate turn off-Thyristors and circuit components Type V drm Vrg V rrm Vt ! Itm Itsm Vd 10 ms, tvj max V rg = - 5 V tc=-25.+85°C tv] = tv max id ) Igt V gt Qgq ! Itm tvj max R th J C Outline = - 5V VD= 24 V VD= 24 V tvi = 25°C tvj = 25“C DC tvj = tvj max
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Untitled
Abstract: No abstract text available
Text: Gate turn off-Thyristors and circuit components Type V qrm V rg V d d>1 Itsm V rrm VT ! Itm Vgt Q gq I gt ! It m tV| max R t h jc O u tlin e = •5 V V D = 24 V 10 m s, V rg = ■ 5 V Ma = DC 24 V ti: = -25 V kA V G 3000 A 35 T 3500 17 20 typ 2000 3.7/3000 1.3
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D1261
Abstract: D1251 371 d901 ic KA 3500 D 901 S 45 T G3000C45T D1381 T4500 "gtoThyristors"
Text: GTO-Thyristors and Circuit Components Type Vdrm V rrm V V V rg = -5V Itsm Vd D 1* Vt I Itm v GT Igt kA 10 ms, tv, max V V/A 10 ms, ^v| max V VD = 24V tvj = 25°C A VD = 24V ^ = 25°C 3,7/3000 1,3 3,5 V rg = -5 V tc=-25. +85°C Q gq / Itm pAs/A tvj = tvj max
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2T930
Abstract: thyristor t 718 n t1791 D 1481 N 60 T SD178 649S D 2601 N 90 T 2651N gct thyristor T188F
Text: Clamping Force kN Phase control thyristors Type kN mm T 178 N T 201 N T 218 N T 268 N T 298 N T 308 N T 348 N T 358 N T 378 N T 380 N T 388 N T 398 N T 399 N T 458 N T 459 N T 501 N T 508 N T 509 N T 551 N T 568 N T 588 N T 589 N T 618 N T 619 N T 648 N
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1200N
T1791
D2201
D931SH
D1031SH
D1131SH
D1331SH
D1441SX
D1641SX
2T930
thyristor t 718 n
D 1481 N 60 T
SD178
649S
D 2601 N 90 T
2651N
gct thyristor
T188F
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BTV58-600R
Abstract: transistor BU 921 T DIODE 25PH 200 gate turn off thyristors 600R M1601 M1602 25ls gt
Text: N ÂtTeR P H I L I P S / D I S C R E T E DkE D • fab53T31 O O l l ô 1^ I _ T m BTV58 SERIES _/ I s~ FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. Thev are
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BTV58
T0-220AB
BTV58â
1000R
BTV58-600R
transistor BU 921 T
DIODE 25PH 200
gate turn off thyristors
600R
M1601
M1602
25ls gt
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Untitled
Abstract: No abstract text available
Text: JJL DtE D N AMER PHILIPS/DISCRETE ^ 53=131 0Diifli3 t BTV58 SERIES FAST GATE TURN-OFF THYRISTORS ! Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, power supplies, motor control etc. The devices have no
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BTV58
O-220AB
1000R
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GT 1081
Abstract: S5 3000 T1791N
Text: Freewheeling Diodes Type V D D V(drm) V l(FSM) l (2)d t kA A(2>s kV Tc= -25 .+85°C I(RM) V /kA 2000, 2500 typ 1,25 24 2880 *103 2,62/6,4 3500.4500 3500.4500 3500.4500 4500 4500 4500 4500 4500 6500 typ 2 18 32 45 18 32 4,5 18 32 26 1620 5120 1012
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50A/ps
GT 1081
S5 3000
T1791N
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DIN 46200
Abstract: V61-14 D 3501 N 42 T d1dt NT398 GEZ DIODES v72-26-120m T2551N V72-26 T188F
Text: Clamping Force kN an d D is c D ia m e te r (m m ) Phase control thyristors Typ kN Rectifier diodes Phase control thyristors mm Typ kN mm Typ kN Fast rectifier diodes mm T 178 N T 201 N 2 ,5 -5 7 -1 2 41 58 T 2001 N 3 6 -5 2 120 D 428 N 3 ,2 -7 ,6 41 T 2006 N
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