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    "BAD BLOCK" SMARTMEDIA ECC Search Results

    "BAD BLOCK" SMARTMEDIA ECC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    65132-001LF Amphenol Communications Solutions Din Accessory Pierce block Visit Amphenol Communications Solutions
    65213-001LF Amphenol Communications Solutions Din Accessory Pierce Block Round Cable 14 Contacts Visit Amphenol Communications Solutions
    67023-001LF Amphenol Communications Solutions Din Accessory Pierce Block Round Cable 96 Contacts Visit Amphenol Communications Solutions
    G88MP041028DEU Amphenol Communications Solutions Micro Power Plus,Wafer 3.0mm Pitch Straight DIP,W/Block Visit Amphenol Communications Solutions
    MUSBRA41145 Amphenol Communications Solutions Harsh USB, type A, IP67. Rightangle, On PCB with Terminal block Visit Amphenol Communications Solutions

    "BAD BLOCK" SMARTMEDIA ECC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    9263 and AT91SAM7SE Microcontrollers

    Abstract: "bad block" smartmedia ecc SmartMedia Logical Format ARM at91sam AT91SAM9260 ARM at91sam7se NAND Flash controller ecc AT91SAM AT91SAM7SE bad block
    Text: Using the ECC Controller on AT91SAM9260/9263 and AT91SAM7SE Microcontrollers 1. Scope The purpose of this document is to explain how to use the Error Corrected Code ECC Controller embedded in the AT91SAM9260/9263 and AT91SAM7SE family of ARM Thumb®-based microcontrollers. The ECC controller performs 2-bit data error


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    AT91SAM9260/9263 AT91SAM7SE AT91SAM9260/9263 6320B 05-Nov-07 9263 and AT91SAM7SE Microcontrollers "bad block" smartmedia ecc SmartMedia Logical Format ARM at91sam AT91SAM9260 ARM at91sam7se NAND Flash controller ecc AT91SAM bad block PDF

    Untitled

    Abstract: No abstract text available
    Text: SMFV004 SmartMedia Document Title 4M x 8 bit SmartMedia ™ Card Revision History Revisten No- t i i s w Draft Date 0.0 Data Sheet 1997. ApriM 0th 1997 1.0 Data Sheet 1998. 1. Changed íb e r s parameter: 5ms Typ. - » 2ms(Typ.) 2. The 1st block(00h block address) is guaranteed to be a good block.


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    SMFV004 SAMSS00T02* PDF

    Untitled

    Abstract: No abstract text available
    Text: SMFV008 SmartMedia Document Title 8M x 8 Bit SmartMedia™ Card Revision History Revision No, History 0.0 1.0 Data Sheet, 1997 Data Sheet, 1998 1. Changed tBERS parameter : 10ms Max. -> 4ms(Max.) 2. Changed Valid Block Number : 1004(Min.) -> 1014(Min.)


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    SMFV008 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMFV002 SmartMedia Document Title 2M x 8 Bit SmartMedia™ Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.


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    SMFV002 PDF

    scheme electronics

    Abstract: No abstract text available
    Text: SMFN004 SmartMedia Document Title 4M x 8 bit SmartMedia ™ Card Revision History Revision No. History Draft Date 0.0 Data Sheet 1997 April 10th 1997 1.0 Data Sheet 1998 1. Changed tBERS param eter: 5ms Typ. - » 2ms(Typ.) 2. The 1st block(00h block address) is guaranteed to be a good block.


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    SMFN004 scheme electronics PDF

    "bad block" smartmedia ecc

    Abstract: SMFN002 SMFV002 smartmedia
    Text: SmartMedia TM SMFN002 Document Title 2M x 8 Bit SmartMedia TM Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.


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    SMFN002 "bad block" smartmedia ecc SMFN002 SMFV002 smartmedia PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SmartMedia SMFV032 Document Title 32M x 8 Bit SmartMedia™ Card Revision History Revision No 0.0 History Draft Date Initial issue. July 14th 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the


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    SMFV032 PDF

    samsung NAND memory

    Abstract: No abstract text available
    Text: SMFV008 SmartMedia Document Title 8M X 8 Bit Sm artM edia™ Card Revision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 10ms Max. —> 4ms(Max.) 2. Changed Valid Block N u m b e r: 1004(Min.) -> 1014(Min.)


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    SMFV008 samsung NAND memory PDF

    fn002

    Abstract: No abstract text available
    Text: SMFN002 SmartMedia Document Title 2M x 8 Bit SmartMedia™ Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997 1.0 Data Sheet, 1998 1. Changed tB E R S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.


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    SMFN002 fn002 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMFV004 SmartMedia Document Title 4M X 8 bit SmartMedia™ Card Revision Historv Revision No. H istorv Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. The 1st block(00h block address) is guaranteed to be a good block.


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    SMFV004 FV004 FN004 PDF

    74lvc3245

    Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
    Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04


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    128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and


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    TC58V32ADC TC58V32ADC 32MByte FDC-22A PDF

    SmartMedia Logical Format

    Abstract: TH58V128DC
    Text: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and


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    TH58V128DC TH58V128DC 32MByte FDC-22C SmartMedia Logical Format PDF

    SmartMedia Logical Format

    Abstract: TC58V64DC
    Text: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and


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    TC58V64DC TC58V64DC 32MByte FDC-22A SmartMedia Logical Format PDF

    ssfdc

    Abstract: TC58512DC
    Text: TOSHIBA TENTATIVE TH58512DC TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 5 1 2-MBIT 32M X 8 BITS CMOS NAND E2PROM (32M BYTE S m artM ed ia ) DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and


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    TH58512DC TH58512 512-Mbit 528-byte 32MByte FDC-22C ssfdc TC58512DC PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 Mbit 2 M x 8 bit CMOS NAND E2PROM (2M BYTE Sm artM edia ) DESCRIPTION The TC5816BDC device is a single 5.0 volt 16 M (17,301,504) bit NAND Electrically Erasable and


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    TC5816BDC TC5816BDC 32MByte FDC-22 PDF

    JL-03

    Abstract: ssfdc tc toshiba nand flash 1996 TC58V64ADC ssfdc LVD SCHEMATIC DIAGRAM
    Text: TOSHIBA TC58V64ADC TO SH IB A M O S DIG ITAL INTEGRATED CIRCUIT TENTATIVE 6 4 - MB IT 8 M X SILICON GATE CM O S 8 BITS CMOS N A N D E2PROM (8 M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and


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    TC58V64ADC 64-MB TC58V64A 64-Mbit 528-byte 32MByte FDC-22A JL-03 ssfdc tc toshiba nand flash 1996 TC58V64ADC ssfdc LVD SCHEMATIC DIAGRAM PDF

    ssfdc tc

    Abstract: TC58V32ADC fDC22A a7611
    Text: T O S H IB A TC58V32ADC TENTATIVE 3 2 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4 M X 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (4 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and


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    TC58V32ADC TC58V32ADC 32MByte FDC-22A ssfdc tc fDC22A a7611 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 b it CMOS N A N D E2PROM (2M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and


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    TC58V16BDC TC58V16BDC 32MByte FDC-22A PDF

    Untitled

    Abstract: No abstract text available
    Text: SMFN004 SmartMedia Document Title 4M x 8 bit SmartMedia™ Card Revision Historv Revision No. H istorv Draft Date 0.0 D ata S hee t, 1997 1.0 D ata S hee t, 1998 1. C h a n g e d tB E R S Rem ark A pril 10th 1997 A pril 10th 1998 p a ra m e te r: 5m s T yp . —> 2 m s(T yp .)


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    SMFN004 PDF

    29736

    Abstract: TC58V16BDC TC5816BDC SmartMedia Logical Format ID device code toshiba NAND ID code
    Text: TO S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 bit C M O S N A N D E2P R O M (2 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and


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    TC58V16BDC TC58V16BDC 32MByte FDC-22A 29736 TC5816BDC SmartMedia Logical Format ID device code toshiba NAND ID code PDF

    TH58V128DC

    Abstract: FDC-22C
    Text: TO SH IBA TH58V128DC TENTATIVE TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT 128 M b it 16 M x SILICON GATE CM OS 8 bit C M O S N A N D E2P R O M (1 6 M BYTE S m a r t M e d ia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and


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    TH58V128DC 32MByte FDC-22C PDF

    SMFV002

    Abstract: "bad block" smartmedia ecc SMFN002
    Text: SmartMediaTM SMFV002 Document Title 2M x 8 Bit SmartMedia TM Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.


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    SMFV002 SMFV002 "bad block" smartmedia ecc SMFN002 PDF

    Untitled

    Abstract: No abstract text available
    Text: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia


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    K9S2808V0A-SSB0 SMFV016A PDF