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    "BY 236" DIODE Search Results

    "BY 236" DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    "BY 236" DIODE Price and Stock

    onsemi MMBZ5232BLT1G

    Diode; Zener; Vr 5.6V; If 10mA; Pkg SOT-23 (TO-236); Vf 0.9V; Tj +150degc; Pd 225mW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBZ5232BLT1G 102,000
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    • 10000 $0.0126
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    onsemi MMBZ18VALT1G

    Zener Diode Array 1 Pair Common Anode 14.5 V 300 mW ±5% SOT-23-3 (TO-236)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBZ18VALT1G 42,000
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    onsemi MMBD301LT1G

    SILICON HOT-CARRIER SCHOTTKY BARRIER DIODE Mixer Diode, Ultra High Frequency, Silicon, TO-236
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBD301LT1G 30,000
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    onsemi MMBZ9V1ALT1G

    Zener Diode Array 1 Pair Common Anode 6 V 300 mW ±5% SOT-23-3 (TO-236)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBZ9V1ALT1G 24,000
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    onsemi MMBD352LT1G

    RF Diode Schottky - 1 Pair Series Connection 7V 225 mW SOT-23-3 (TO-236)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBD352LT1G 15,000
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    "BY 236" DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability


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    I27304 E78996 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability


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    I27304 E78996 PDF

    236PB

    Abstract: No abstract text available
    Text: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability


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    I27304 E78996 100merchantability, 12-Mar-07 236PB PDF

    Untitled

    Abstract: No abstract text available
    Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package


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    E78996 2002/95/EC 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage


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    E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage


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    E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    3 phase BUSBAR

    Abstract: No abstract text available
    Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package


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    E78996 2002/95/EC 18-Jul-08 3 phase BUSBAR PDF

    VSKD 236

    Abstract: VSKD236 vsk.166 vskj 56 vsk 300 VSKC 236
    Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package


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    E78996 2002/95/EC 11-Mar-11 VSKD 236 VSKD236 vsk.166 vskj 56 vsk 300 VSKC 236 PDF

    VSKD 236

    Abstract: vskj 56 9517
    Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package


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    E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VSKD 236 vskj 56 9517 PDF

    vsk 300

    Abstract: No abstract text available
    Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package


    Original
    E78996 2002/95/EC 11-Mar-11 vsk 300 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage


    Original
    E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VSK.166, .196, .236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) RoHS • 3500 VRMS isolating voltage COMPLIANT • Industrial standard package


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    E78996 18-Jul-08 PDF

    borg

    Abstract: k-236
    Text: I27116 rev. A 01/2000 SERIES IRK.166, .196, .236 NEW INT-A-pak Power Modules STANDARD RECOVERY DIODES 165 A 195 A 230 A Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability


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    I27116 E78996 borg k-236 PDF

    VSKC

    Abstract: No abstract text available
    Text: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package


    Original
    E78996 2002/95/EC 18-Jul-08 VSKC PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability


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    I27116 E78996 08-Mar-07 PDF

    IRK E78996 701819-303ac

    Abstract: I27900 E78996 rectifier module 2 A GLASS PASSIVATED BRIDGE RECTIFIER E78996 bridge I27116
    Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability


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    I27116 E78996 12-Mar-07 IRK E78996 701819-303ac I27900 E78996 rectifier module 2 A GLASS PASSIVATED BRIDGE RECTIFIER E78996 bridge PDF

    IRK E78996 701819-303ac

    Abstract: I27900
    Text: Bulletin I27116 rev. C 03/02 SERIES IRK.166, .196, .236 STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features 165 A 195 A 230 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability


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    I27116 E78996 IRK E78996 701819-303ac I27900 PDF

    ALA2F24

    Abstract: ALA2F12 ALA2PF12 ALA2PF24
    Text: LA ALA VDE 2 FORM A SLIM POWER RELAY LA RELAYS (ALA) FEATURES 12.0 .472 24.0 .945 between contact and coil: Min. 6 mm .236 inch (In compliance with IEC65) • Surge withstand voltage between contact and coil: 10,000 V or more. 4. High noise immunity realized by the


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    IEC65) ALA2F12, ALA2F24 ALA2F12 ALA2PF12 ALA2PF24 PDF

    ALA2F24

    Abstract: ALA2PF24 ALA2F12 ALA2PF12 24 v DC relay
    Text: LA VDE 2 Form A slim power relay LA RELAYS FEATURES 12.0 .472 24.0 .945 25.0 .984 mm inch tween contact and coil: Min. 6 mm .236 inch In compliance with IEC65 • Surge withstand voltage between contact and coil: 10,000 V or more. 4. High noise immunity realized by the


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    IEC65) ALA2PF12, ALA2F12, ALA2F24 ALA2PF24 ALA2F12 ALA2PF12 24 v DC relay PDF

    ALA2F24

    Abstract: ALA2PF12 ALA2F12 ALA2PF24
    Text: LA VDE 2 Form A slim power relay LA RELAYS FEATURES 12.0 .472 24.0 .945 25.0 .984 mm inch tween contact and coil: Min. 6 mm .236 inch In compliance with IEC65 • Surge withstand voltage between contact and coil: 10,000 V or more. 4. High noise immunity realized by the


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    IEC65) ALA2F12, ALA2F24 ALA2PF12 ALA2F12 ALA2PF24 PDF

    1N31

    Abstract: crystal diode LTPJ
    Text: MIL -S-19500/236A 20 October 1970 SUPERSEDING MIL-S-19500/236 23 April 1862 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON fTVDf 1KTQ1 X X JL.11 U i. This specification is m andatory for use by all D epart­ m ents and A gencies of the D epartm ent of D efense.


    OCR Scan
    MIL-S-19500/236A MIL-S-19500/236 1N31 crystal diode LTPJ PDF

    152k 2KV

    Abstract: rr 102k 2kv 122k 2kv 102-KA 222K 1KV 472k 1kv 472k 2kv RR 272K 2KV 122K 1KV 182k 2kv
    Text: TDK Ceramic Capacitors 1 to 3kVdc CERAMIC DISC CAPACITORS CLASS II, LOW DISSIPATION, RR TYPE [1, 2, 3kVdc] FEATURES • This product is suitable for preventing dielectric break down of power transistors and diodes in a switching power supply, for suppressing noise


    OCR Scan
    PDF

    Knox Semiconductor

    Abstract: zener K270 K300 K120 K150 K180 K210 K240 K270 K330
    Text: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices


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    QQ0Q24Q DO-35 Knox Semiconductor zener K270 K300 K120 K150 K180 K210 K240 K270 K330 PDF

    1n4146 zener

    Abstract: Zener diode 1N4146 LM 317 TO 92 PACKAGE THOMSON LM LM33S LM238 LM336 lm336 pin diagram 1N4148 thomson 1N4148
    Text: THOMSON SEMICONDUCTORS 2.5 V V O L T A G E REFERENCES 2.5 V V O L T A G E REFERENCES The LM 236 and LM 336 are précision 2 ,5 V regulator diodes. These voltage refe­ rence monolithic ICs operate like 2 .5 V zener diodes w ith a Ipw tem perature coefficient and a dynam ic im pedance of 0 .2 ]. A third pin enabies adjusting


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    LM236 LM336 CB-97 LM33S LM236AZ 1n4146 zener Zener diode 1N4146 LM 317 TO 92 PACKAGE THOMSON LM LM238 lm336 pin diagram 1N4148 thomson 1N4148 PDF