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    "NORMALLY ON" SIC FET Search Results

    "NORMALLY ON" SIC FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    "NORMALLY ON" SIC FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    westinghouse transistors

    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,


    Original     		PDF 10-kV westinghouse transistors

    MYXJ11200-34CAB

    Abstract: silicon carbide
    Text: Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Product Overview Features y r a in Benefits • High voltage 1200V • Low on resistance RDS On • High current 34A • Voltage controlled • High temperature 175°C • Low gate charge


    Original     		PDF MYXJ11200-34CAB MIL-PRF-19500 MYXJ11200-34CAB silicon carbide

    CHT-TIT9570A

    Abstract: sic normally on fet
    Text: The Leader in High Temperature Semiconductor Solutions Version: 1.2 22-Apr-11 Last Modification Date CHT-THEMIS Power Transistor Driver Controller General description Features CHT-THEMIS is the controller block of the Power Transistor Driver solution CHTTHEMIS and CHT-ATLAS. The chipset is


    Original     		PDF 22-Apr-11 DS-100782 CHT-TIT9570A sic normally on fet

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    mosfet based power inverter project

    Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module "silicon carbide" FET home made inverter
    Text: Present PresentStatus StatusAnd AndFuture FutureProspects Prospectsof ofSiC SiCPower PowerDevices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation, Japan John Donlon Senior Application Engineer, Powerex Inc., U.S.A.


    Original     		PDF

    laptops ics and their various functions

    Abstract: FeRAM ROHM ushio Rohm LED Lighting RPI-1040 BH1720FVC BA6287F circuit diagram of luminous inverter halogen bulb circuit diagram SH3002-DC80A
    Text: 4 http://www.rohm.com/ei/ Vol. 2009.01 Cover Story 1 Nonvolatile Logic Technology Retain data without a power supply Cover Story 2 Breaking away from silicon Full SiC power modules Cover Story 3 Applying semiconductor technology to the lighting field LED lighting modules


    Original     		PDF BD6210HFP BD6210F BD6211HFP BD6211F BD6212HFP BD6212FP BD6220HFP BD6220F BD6221HFP BD6221F laptops ics and their various functions FeRAM ROHM ushio Rohm LED Lighting RPI-1040 BH1720FVC BA6287F circuit diagram of luminous inverter halogen bulb circuit diagram SH3002-DC80A

    jb smd

    Abstract: smd transistor 2x 2x smd Capacitors 10-16 L smd smd resistors packages 2X smd transistor HERMETIC SMD SMD Devices
    Text: Application Note AN-1016 Hermetic Surface Mount Device SMD , Its Advantages and Solutions to Assembly Integration by Tiva Bussarakons International Rectifier, Inc. El Segundo, California Introduction Hermetic surface mount packages have been in existence for more than 15 years. While the leaded


    Original     		PDF AN-1016 O-257, O-254, jb smd smd transistor 2x 2x smd Capacitors 10-16 L smd smd resistors packages 2X smd transistor HERMETIC SMD SMD Devices

    jb smd

    Abstract: HERMETIC SMD pd smd smd transistor 2x smd resistors mechanical dimension FR4 substrate with dielectric constant 4 smd package variety SMD Devices TO-25X CLCC 64 pins footprint
    Text: The Hermetic Surface Mount Device SMD , Its Advantages and Solutions to Assembly Integration Tiva Bussarakons International Rectifier, Inc. El Segundo, California Introduction Hermetic surface mount packages have been in existence for more than 15 years. While the leaded


    Original     		PDF O-257, O-254, jb smd HERMETIC SMD pd smd smd transistor 2x smd resistors mechanical dimension FR4 substrate with dielectric constant 4 smd package variety SMD Devices TO-25X CLCC 64 pins footprint

    HERMETIC SMD

    Abstract: to258 EXCEL SMD SMD Devices smd diode ED CLCC 64 pins footprint TO-25X
    Text: New Materials and Technologies Solve Hermetic SMD Integration Tiva Bussarakons, International Rectifier, Inc., El Segundo, California H ermetic semiconductor Package Construction SMDs surface-mount The SMD package (Figure 1 difdevices) can now be fers considerably from its predecessuccessfully and ecosor, the CLCC (ceramic leadless


    Original     		PDF

    Samtec QTH-060-02-F-D-A

    Abstract: MOTHERBOARD Chip Level MANUAL mbx 204 sandisk micro sd card circuit diagram sandisk micro SD Card 2GB hd44780 PIC lcd controller hp g42 lcd led ic ps2 controller adaptor to usb hitachi hd44780 display PB926EJ-S ZU183
    Text: RealView Platform Baseboard for ARM926EJ-S HBI-0117 User Guide Copyright 2003-2010 ARM Limited. All rights reserved. ARM DUI 0224I RealView Platform Baseboard for ARM926EJ-S User Guide Copyright © 2003-2010 ARM Limited. All rights reserved. Release Information


    Original     		PDF ARM926EJ-S HBI-0117 0224I Samtec QTH-060-02-F-D-A MOTHERBOARD Chip Level MANUAL mbx 204 sandisk micro sd card circuit diagram sandisk micro SD Card 2GB hd44780 PIC lcd controller hp g42 lcd led ic ps2 controller adaptor to usb hitachi hd44780 display PB926EJ-S ZU183

    MHS2501

    Abstract: MHS2501KF
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1 Amp SOLID STATE RELAYS DEVICES LEVELS AVAILABLE MHS2501 Series COTS CLASS H CLASS K (Consult Table 3 for Part Number Designations)


    Original     		PDF MHS2501 T4-LDS-0153 MHS2501KF

    uart in pin diagram for core i3 processor

    Abstract: circuit diagram of queuing with seven segment ADSP21532 ADSP-21532 CCIR-656 Blackfin dsp SiC BJT T40-A1
    Text: PRELIMINARY TECHNICAL DATA a ADSP-21532 Preliminary Technical Data FEATURES 300 MHz High-Performance MSA DSP Core Two 16-Bit MACs, Two 40-Bit ALUs, Four 8-Bit Video ALUs, 40-Bit Shifter RISC-Like Register and Instruction Model for Ease of Programming and Compiler-Friendly Support


    Original     		PDF ADSP-21532 16-Bit 40-Bit 160-Lead ADSP-21532SKCA-300 uart in pin diagram for core i3 processor circuit diagram of queuing with seven segment ADSP21532 ADSP-21532 CCIR-656 Blackfin dsp SiC BJT T40-A1

    SBI Temperature Sensor Interface SB-TSI

    Abstract: SB-TSI AMD 40821 45937 SBI Temperature Sensor Interface SB-TSI Specification, #40821 SBI Temperature Sensor Interface SB-TSI Specification, AMD Family 12h amd 10h family F-3X amd apml
    Text: 41918 Rev 1.02 - August 25, 2009 APML Specification Cover page Advanced Platform Management Link APML Specification Advanced Micro Devices 1 41918 Rev 1.02 - August 25, 2009 APML Specification 2006-2009 Advanced Micro Devices, Inc. All rights reserved.The contents of this document are provided in connection with Advanced Micro Devices, Inc. ("AMD") products. AMD makes


    Original     		PDF

    PCB5010

    Abstract: ACR32 PCF5010WP8
    Text: DEVELOPMENT DATA This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. PCB5010 PCB5011 SINGLE-CHIP DIGITAL SIGNAL PROCESSOR HOW TO USE THIS DATA SHEET • Section 1 contains ordering inform ation and the main


    OCR Scan     		PDF PCB5010 PCB5011 PCB5011. PCB5011, PCB5011 ACR32 PCF5010WP8

    LH0101 equivalent

    Abstract: No abstract text available
    Text: LH0101 3 3 N a t i o n a l mm Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 Is a wideband power operational amplifier fea­ turing FET inputs, Internal compensation, virtually no cross­ over distortion, and rapid settling time. These features make


    OCR Scan     		PDF LH0101 LH0101 LH0101 equivalent

    TSC500

    Abstract: TSC700 TGC100 tms0102 motorola catalog Linear Application Book Design Seminar Signal Transmission Digital IC National catalog GE catalog Motorola Bipolar Power Transistor Data
    Text: TFXAS In s t r u m e n t s SCOPE Testability Products I I Applications Guide 1990 Semiconductor Group SCOPE™Testability Products Applications Guide Design Automation — Semiconductor Group Texas Instruments Te x a s In s t r u m e n t s IMPORTANT NOTICE


    OCR Scan     		PDF

    3554

    Abstract: 3554AM
    Text: B U R R -B R O W N 3554 Wideband - Fast-Settling O P E R A TIO N A L A M PLIFIER FEATURES APPLICATIONS • S L E W RATE. lOOOVusec • PU LSE A M PLIF IER S • FAST SETTLING, 150nsec, max to ±.05% • TEST EQUIPM ENT • GAIN-BANDW IDTH PRODUCT. 1.7GHz


    OCR Scan     		PDF 150nsec, 3554 3554AM

    LT1010MH

    Abstract: SIMPLE 40w inverter circuit LT1010CT LT1010MK transistor MJE3055 LH0002 LT1010 LT1010CH LT1010CK LT1010CN8
    Text: _ LTIOIO L i n t i A R . TECHNOLOGY Fast ± 150mA Power Buffer F€RTUR€S D€SCRIPTIOn • 20MHz Bandwidth ■ 75V//ts Slew Rate ■ Drives ± 10V into 75fi ■ 5mA Quiescent Current ■ Drives Capacitive Loads > tyF ■ Current and Thermal Limit


    OCR Scan     		PDF 20MHz 150mA LT1010 LT1010 4-LeadTO-39 LT1010M LT1010C 5-LeadTQ-220 LT1010MH SIMPLE 40w inverter circuit LT1010CT LT1010MK transistor MJE3055 LH0002 LT1010CH LT1010CK LT1010CN8

    amplifier b7 6368

    Abstract: sid 6581 MOS 6581 LF 8731 wind of change noten commodore 6581 LSE B3 0519 C536 FC10
    Text: 501 SOUND \ s S V \ \ \ > " \ \ FEATU R ES / • 3 Tene C sciüatcrs Range: G-4 k n z ^ / \ •> N ” " s n ç :e . S a w tc c tn , " \ V a n s c ie =,jis a . N o is e v . • 3 A m cntu ce v ic c u ia tc rs s \ Pance: 43 a £ ,• / ‘ v. • 3 Envelope G enerators /


    OCR Scan     		PDF t9-i03 SI0/680-H8Â 1000pF 2200pF amplifier b7 6368 sid 6581 MOS 6581 LF 8731 wind of change noten commodore 6581 LSE B3 0519 C536 FC10

    TMPZ84C10A

    Abstract: TMPZ84CO TMPZ84C00AP-6 TMPZ84C00AM-6 MPUZ80-40 84c00a Sx09Sx TMPZ84C20
    Text: T O S H IB A TMPZ84C00A TMPZ84C00AP-6 /TMPZ84C00AM-6 /TMPZ84C00AT-6 TMPZ84C00AP-8 / TMPZ84C00AM-8 /TM PZ84C00AT-8 TLCS-Z80 MPU : 8-BIT MICROPROCESSOR 1. OUTLINE AND FEATURES T h e T M P Z 84C 00A is a n 8-b it m icroprocessor h ere in a fter referred to a s M P U , w hich


    OCR Scan     		PDF TMPZ84C00A TMPZ84C00AP-6 /TMPZ84C00AM-6 /TMPZ84C00AT-6 TMPZ84C00AP-8 TMPZ84C00AM-8 PZ84C00AT-8 TLCS-Z80 MPUZ80-58 TMPZ84C10A TMPZ84CO TMPZ84C00AM-6 MPUZ80-40 84c00a Sx09Sx TMPZ84C20

    SAA7341

    Abstract: SAA7341GP T72 diode KTC AL philips SAA7341 irf 2205 3 phase ac sinewave motor controller single ic TDA car audio amplifier IEC134 A7A1
    Text: Philips Semiconductors g | bbSBTSH 0072'lD b S I C 3 Preliminary Specification 77T CMOS Digital decoding 1C for Compact Disc 1 1 SAA7341 NAPC/PHILIPS FEATURES b3E SEN IC O N D GENERAL DESCRIPTION • Error correction and concealment functions • Analog front end data slicer,


    OCR Scan     		PDF SAA7341 MKA103 bb53T24 0D72C13D -TBC328 BC338 L1N4002 BC328 SAA7341 SAA7341GP T72 diode KTC AL philips SAA7341 irf 2205 3 phase ac sinewave motor controller single ic TDA car audio amplifier IEC134 A7A1

    t5188

    Abstract: LT1010CH LT1010MK LT1010CN8 2N38662 transistor MJE3055 LH0002 LT1010 LT1010CK LT1010CT
    Text: TECHNOLOGY L i n t i A R _ LTIOIO . Fast ± 150mA Power Buffer F€RTUR€S D€SCRIPTIOn • 20MHz Bandwidth ■ 75V//ts Slew Rate ■ Drives ± 10V into 75fi ■ 5mA Quiescent Current ■ Drives Capacitive Loads > tyF ■ Current and Thermal Limit


    OCR Scan     		PDF 20MHz 150mA LT1010 LT1010 4-LeadTO-39 LT1010M LT1010C 5-LeadTQ-220 t5188 LT1010CH LT1010MK LT1010CN8 2N38662 transistor MJE3055 LH0002 LT1010CK LT1010CT

    U1010

    Abstract: Widlar
    Text: _ u LTIOIO m TECHNOLOGY Fast ± 150mA Power Buffer F€ R TU fl€ S D € S C R IP TIO n • ■ ■ ■ ■ ■ ■ ■ The LT1010 is a fast, unity-gain buffer that can increase the output capability of existing IC op amps by more than an order of magnitude. This easy-to-use part makes fast


    OCR Scan     		PDF 150mA LT1010 LT1010M LT1010C O-220 U1010 Widlar

    TLMB100

    Abstract: light-sensitive resistor GaAs silicon carbide LED telefunken diodes SI 61 L
    Text: T e m ig TELEFUNKEN Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as


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