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    "PUNCHTHROUGH VOLTAGE" AND ESD Search Results

    "PUNCHTHROUGH VOLTAGE" AND ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    "PUNCHTHROUGH VOLTAGE" AND ESD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR PG2.8CUS23 TECHNICAL DATA Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES ・EPD Enhanced Punch-Through Diode Structure. ・400 Watts peak pulse power (tp=8/20 s)


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    PDF 8CUS23 5/50ns)

    PG2.8CUS23

    Abstract: IS-B50
    Text: SEMICONDUCTOR PG2.8CUS23 TECHNICAL DATA Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES E B L L EPD Enhanced Punch-Through Diode Structure. Transient protection for high-speed data lines to


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    PDF 8CUS23 5/50ns) PG2.8CUS23 IS-B50

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR PG2.8CUS23 TECHNICAL DATA Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES E B L L EPD Enhanced Punch-Through Diode Structure. D 400 Watts peak pulse power (tp=8/20 s)


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    PDF 8CUS23 5/50ns)

    Untitled

    Abstract: No abstract text available
    Text: SLVE2.8 & SLVG2.8 Diodes For EPD TVS™ ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF OT-143

    ethernet TVS 2.8 diode

    Abstract: SLVE*tc
    Text: SLVE2.8 & SLVG2.8 EPD TVS™ Diodes For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF OT-143 traOT-143 ethernet TVS 2.8 diode SLVE*tc

    marking code E2

    Abstract: No abstract text available
    Text: SLVE2.8 and SLVG2.8 Diodes For EPD TVS™ ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF OT-143 OT-143 marking code E2

    VPT CONNECTORS

    Abstract: marking 5a TVS SOT143
    Text: SLVE2.8 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and transmission lines from transients caused by


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    PDF OT-143 VPT CONNECTORS marking 5a TVS SOT143

    marking code e2

    Abstract: SLVE2.8.TCT
    Text: SLVE2.8 and SLVG2.8 Diodes For EPD TVS™ ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF OT-143 marking code e2 SLVE2.8.TCT

    SLVU2.8-LF

    Abstract: IEC61000-4-4
    Text: SLVU2.8 Ultralow Capacitance TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 400 WATTS 2.8 VOLTS P b Lead Pb -Free FEATURES: 3 * 400 W Peak Pulse Power per Line (tp=8/20 uS) * One Device Protects one Unidirectional Line. * Low Capacitance.


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    PDF IEC61000-4-2 IEC61000-4-4 5/50ns) IEC61000-4-5 OT-23 19-Apr-07 Fig12. Fig13. OT-23 SLVU2.8-LF

    SR2.8

    Abstract: No abstract text available
    Text: SR2.8 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features ‹ ESD protection to RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission


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    PDF OT-143 SR2.8

    marking 2U diode

    Abstract: ethernet surge protect R 2.8 diode marking codes 2u Diode marking 2U 28 diode diode 2U 14 marking DIODE 2U marking r2 marking 2U 20 diode
    Text: SR2.8 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features ! ESD protection to IEC 61000-4-2, Level 4 ! Array of surge rated diodes with internal RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has


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    PDF OT-143 marking 2U diode ethernet surge protect R 2.8 diode marking codes 2u Diode marking 2U 28 diode diode 2U 14 marking DIODE 2U marking r2 marking 2U 20 diode

    eel 16 2005 transformer

    Abstract: eel 35 2005 transformer ethernet TVS 2.8 diode TO253
    Text: SR2.8 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features ‹ ESD protection to RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission


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    PDF 5/50ns) IPC-SM-782A. eel 16 2005 transformer eel 35 2005 transformer ethernet TVS 2.8 diode TO253

    eel 16 2005 transformer

    Abstract: eel 35 2005 transformer
    Text: SR2.8 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features ‹ ESD protection to RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission


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    Untitled

    Abstract: No abstract text available
    Text: SLVU2.8-8 Diode Array EPD TVS™ For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF

    SLVU2.8-4

    Abstract: No abstract text available
    Text: SLVU2.8-4 EPD TVSc Diode Array For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Voltage EPD TVS for ESD and Latch-Up Protection Preliminary - March 27, 2000 SLVU2.8-4 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS


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    PDF MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: SLVU2.8-4 Diode Array EPD TVS™ For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF

    3311PQ

    Abstract: No abstract text available
    Text: uClamp3311PQ Low Voltage µClamp for Automotive Applications PROTECTION PRODUCTS - MicroClamp® Description Features The µClamp 3311PQ transient voltage suppressor is specifically designed to protect sensitive components which are connected to low-voltage data and transmission lines from overvoltage caused by ESD electrostatic discharge , CDE (cable discharge events), and


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    PDF 3311PQ AEC-Q100

    Untitled

    Abstract: No abstract text available
    Text: uClamp3311PQ Low Voltage µClamp for Automotive Applications PROTECTION PRODUCTS - MicroClamp® Description Features The µClamp 3311PQ transient voltage suppressor is specifically designed to protect sensitive components which are connected to low-voltage data and transmission lines from overvoltage caused by ESD electrostatic discharge , CDE (cable discharge events), and


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    PDF uClamp3311PQ 3311PQ AEC-Q100

    pn junction diode structure

    Abstract: TVS 30V TVS diode Application Note
    Text: Surging Ideas TVS Diode Application Note Revised - February 21, 1999 SI96-06 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com EPD Transient Voltage Suppressors for Low Voltage Electronics At voltages below 5V, conventional avalanche technology


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    PDF SI96-06 pn junction diode structure TVS 30V TVS diode Application Note

    SI96-06

    Abstract: pn junction diode structure "punchthrough voltage" AND ESD design ideas 3.3V TVS diode
    Text: SI96-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS EPD Transient Voltage Suppressors for Low Voltage Electronics passivation At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages below 5V, very high impurity concentrations


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    PDF SI96-06 18cm-3) SI96-06 pn junction diode structure "punchthrough voltage" AND ESD design ideas 3.3V TVS diode

    VPT CONNECTORS

    Abstract: SLP1006P2T
    Text: uClamp3311T Low Profile Clamp 1-Line ESD protection PROTECTION PRODUCTS - MicroClamp® Description Features The μClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones,


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    PDF uClamp3311T 3311T providep3311T uClamp3311T VPT CONNECTORS SLP1006P2T

    SLVU2.8-4.TBT

    Abstract: No abstract text available
    Text: SLVU2.8-4 EPD TVS Diode Array For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),


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    PDF 98/Tube SLVU2.8-4.TBT

    SEMTECH MARKING sot-143

    Abstract: No abstract text available
    Text: SLVE2.8 SEMTECH Today*« Rauiki.1 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION FEATURES The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and


    OCR Scan
    PDF OT-143 SEMTECH MARKING sot-143