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    "SILICON CARBIDE" DEVICE Search Results

    "SILICON CARBIDE" DEVICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    "SILICON CARBIDE" DEVICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    W4PRE8F-0200

    Abstract: W4TRD0R-0200 W4TRE0R-0200 W6NRD0X-0D00 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRF0R-0200 W4NRF0X-0D00
    Text: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1


    Original     		PDF

    Infineon diffusion solder

    Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
    Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices


    Original     		PDF 600/650V SDB06S60 IDD02SG60C IDD03SG60C IDD04SG60C IDD05SG60C IDD06SG60C IDD08SG60C IDD09SG60C IDD10SG60C Infineon diffusion solder Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v

    SCS120AGC

    Abstract: SCS110AGC SCS108AGC SCS112AGC CNA110004 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog
    Text: Innovations Embedded Silicon Carbide Schottky Barrier Diodes Selection Guide ROHM MarketingUSA Presented by ROHM Semiconductor Silicon Carbide Schottky Barrier Diodes from ROHM Semiconductor Choosing Silicon Carbide Instead of Silicon Schottky barrier diodes SBDs have


    Original     		PDF CNA110004 SCS120AGC SCS110AGC SCS108AGC SCS112AGC 600 V power Schottky silicon carbide diode silicon carbide Switching Characteristics of Fast Recovery Diodes ultra low forward voltage schottky diode ROHM Product Guide Product Catalog

    W6NRD0X-0000

    Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
    Text: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance  Low Vf silicon carbide Schottky barrier diode included in parallel with body diode


    Original     		PDF SPM1007

    SDP20S120D

    Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
    Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature


    Original     		PDF SDP20S120D O-247 SDP20S120D C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories

    L4821A

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A

    L4821A

    Abstract: SPD10S30 A101 SIDC03D30SIC2
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A SPD10S30 A101 SIDC03D30SIC2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163A1 Q67050-A4163A2 L4821A,

    200a smd

    Abstract: SSR10C20 SSR10C30 silicon carbide RS003
    Text: World’s First Silicon Carbide SSR10C30 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10A / 300V Schottky Silicon Carbide


    Original     		PDF SSR10C30 SSR10C 175oC) SSR10C20S SSR10C20G SSR10C30S SSR10C30G 200a smd SSR10C20 silicon carbide RS003

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,

    L4804A

    Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, L4804A SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V

    silicon carbide

    Abstract: No abstract text available
    Text: World's First Silicon Carbide Centertap Rectifier SSR40C30CT Series SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 40 AMP 300 V Schottky Silicon Carbide


    Original     		PDF SSR40C30CT 250oC SSR40C 150oC, 10VDC, 150oC) 175oC) O-254 SSR40C20GCT SSR40C20MCT silicon carbide

    silicon carbide

    Abstract: 5Ct SMD
    Text: World's First Silicon Carbide Centertap Rectifier SSR40C30CT Series SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 40 AMP 300 V Schottky Silicon Carbide


    Original     		PDF SSR40C30CT 250oC SSR40C 150oC, 10VDC, 150oC) 175oC) O-254 SSR40C20GCT SSR40C20MCT silicon carbide 5Ct SMD

    Untitled

    Abstract: No abstract text available
    Text: World’s First Silicon Carbide SSR10C30 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10A / 300V Schottky Silicon Carbide


    Original     		PDF SSR10C30 SSR10C 175oC) SSR10C20S SSR10C20G SSR10C30S SSR10C30G

    diode schottky 600v

    Abstract: 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454
    Text: SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		PDF SIDC11D60SIC3 Q67050-A4161A104 diode schottky 600v 600V,4A DIODE Schottky diode Die SDP04S60 SIDC11D60SIC3 DSA0037454

    SEMISOUTH

    Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
    Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current


    Original     		PDF SDP10S120D O-247 SEMISOUTH SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device

    SDP10S30

    Abstract: SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS
    Text: SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery


    Original     		PDF SIDC24D30SIC3 Q67050-A4163A103 SDP10S30 SIDC24D30SIC3 Carbide Schottky Diode DSA0037454 10A SMPS

    SPD06S60

    Abstract: diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454
    Text: SIDC19D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior


    Original     		PDF SIDC19D60SIC3 Q67050-A4162A104 SPD06S60 diode schottky 600v SIDC19D60SIC3 DIODE 200A 600V schottky DSA0037454

    DIODE 200A 600V schottky

    Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
    Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC00D60SIC2 Q67050-A4201A101 Q67050-A4201A102 L4834A, DIODE 200A 600V schottky SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode

    silicon carbide

    Abstract: No abstract text available
    Text: World’s First Silicon Carbide Centertap Rectifier SSR20C30CT Series SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax:(562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 20 AMP 300 V Schottky Silicon Carbide


    OCR Scan     		PDF SSR20C30CT SSR20C SSR20C20CTG SSR20C30CTG SSR20C20CTS SSR20C30CTS silicon carbide

    silicon carbide

    Abstract: No abstract text available
    Text: World’s First Silicon Carbide Centertap Rectifier SSR40C30CT Series SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax:(562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 40 AMP 300 V Schottky Silicon Carbide


    OCR Scan     		PDF SSR40C30CT SSR40C SSR40C20CTG SSR40C20CTM SSR40C20CTS SSR40C30CTG SSR40C30CTM SSR40C30CTS O-254 silicon carbide