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    "TUNNEL DIODE" CHIP ASSEMBLY Search Results

    "TUNNEL DIODE" CHIP ASSEMBLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    "TUNNEL DIODE" CHIP ASSEMBLY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    back Tunnel diode

    Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


    Original     		MIL-PRF-19500 MIL-PRF-35834 back Tunnel diode mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes PDF

    MBD5057

    Abstract: No abstract text available
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


    Original     		MIL-PRF-19500 MIL-PRF-35834 MBD5057 PDF

    tunnel junction diode

    Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
    Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.


    OCR Scan     		sufficient800 tunnel junction diode tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel PDF

    MP1601

    Abstract: MP1303 MP1301
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304


    Original     		MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1601 MP1303 MP1301 PDF

    TUNNEL DIODE

    Abstract: tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304


    Original     		MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 TUNNEL DIODE tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452 PDF

    tps59610

    Abstract: thermistor d503 TP218 IC TPS59124
    Text: User's Guide SLUU465 – November 2010 An 8-V to 14-V Vin 2010 Atom E6xx Tunnel Creek Power System The TPS59610EVM-634 evaluation module EVM is a complete solution for the 2010 Atom™ E6xx Tunnel Creek Power System from a 12-V input bus. The EVM uses the TPS59610 for Atom CPU and


    Original     		SLUU465 TPS59610EVM-634 TPS59610 TPS51120 TPS54326 TPS59124 TPS51100 TPS74801 CSD86330Q3D) thermistor d503 TP218 IC PDF

    back Tunnel diode

    Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
    Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth


    OCR Scan     		MIL-STD-19500 -65to+ 17dBmCW MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26 MBD-205s back Tunnel diode "back diode" Germanium power DIODE tunnel MBD back diode PDF

    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


    OCR Scan     		CT3508-1 backward diode tunnel diode General Electric "backward diode" PDF

    MBD3057-C18

    Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
    Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS


    OCR Scan     		MIL-STD-19500 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD3057-C18 MBD2057-C18 DIODE e26 back Tunnel diode MBD1057 PDF

    MBD3057-C18

    Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
    Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability


    OCR Scan     		MIL-STD-195 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54temperature, MBD3057-C18 MBD5057-C18 back Tunnel diode MBD-3057-C18 MBD5057 MBD2057-C18 MBD1057 PDF

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    Sampling Phase Detectors

    Abstract: "tunnel diode" chip assembly
    Text: uc metelics 975 Stewart Avenue • Sunnyvale, California 9 4 0 8 6 • 408-737-8181, FAX: 408-733-7645 RF/ MICROWAVE SUBASSEMBLIES PRODUCTS • • • • • • Switches Detectors - Schottky, Tunnel Limiters Sampling Phase Detectors Other Assemblies Available


    OCR Scan     		PDF

    MBD3057-C18

    Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
    Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth


    OCR Scan     		PDF

    MBD3057-C18

    Abstract: back Tunnel diode
    Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: W hpl HEW LETT m inM PACKARD Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2004 F eatu res D escription Pin Configuration • Frequency Range: 10 to 2000 MHz The UTD-2004 is a sensitive microwave threshold detector which provides efficient and


    OCR Scan     		UTD-2004 UTD-2004 PDF

    BPW50

    Abstract: tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    Original     		PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70 PDF

    switch diode tunnel

    Abstract: No abstract text available
    Text: That HEWLETT WlnM PACKARD A vantek Products Threshold D etector 0.1 to 18 GHz Technical Data ATD-18021 Features Description Pin Configuration • Frequency Range: 0.1 to 18 GHz • Sensitive Input: -25 to •10 dBm The ATD-18021 is a sensitive microwave threshold detector


    OCR Scan     		ATD-18021 ATD-18021 switch diode tunnel PDF

    MBD2057-C18

    Abstract: No abstract text available
    Text: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C


    OCR Scan     		MIL-STD-19500 MBD2057-C18 PDF

    tda1000

    Abstract: TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device X This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    OCR Scan     		PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112 PDF

    D3PAK

    Abstract: tunnel diode application to247 pcb footprint FR4 substrate height and thickness APT9503 APT4016SN "tunnel diode" chip assembly Thermalcote THE 249
    Text: APPLICATION NOTE APT9503 By Kenneth W. Dierberger and Denis R. Grafham INNOVATIVE MOUNTING TECHNIQUES ENHANCE THERMAL PERFORMANCE OF THE SURFACE-MOUNT D3 PAK PACKAGE PRESENTED AT POWERSYSTEMS WORLD INTERNATIONAL CONFERENCE & EXHIBIT SEPTEMBER 12, 1995 Page 1


    Original     		APT9503 B-1330 O-247, D3PAK tunnel diode application to247 pcb footprint FR4 substrate height and thickness APT9503 APT4016SN "tunnel diode" chip assembly Thermalcote THE 249 PDF

    Untitled

    Abstract: No abstract text available
    Text: IB I HEW LETT mLEm P a c k a r d Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2004 Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The UTD-2004 is a sensitive microwave threshold detector w hich provides efficient and


    OCR Scan     		UTD-2004 UTD-2004 G011214 PDF

    BPW50

    Abstract: tda1000 74LS00A
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 74LS00A PDF

    tda1000

    Abstract: BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP PDF

    INCOMING RAW MATERIAL specification

    Abstract: INCOMING RAW MATERIAL INSPECTION RAW MATERIAL SPECIFICATION SHEET belt DOCTOR INCOMING RAW MATERIAL NTC Thermistor Quality Thermistor SENSOR plastic raw material back Tunnel diode
    Text: INCOMING INSPECTION All raw materials, after being received in, are inspected to verify that their physical and electrical attributes are acceptable. A unique ID# is assigned and used for lot traceability. « Back RAW MATERIAL BLEND NTC thermistor manufacturing begins with the precise blending of raw materials into an organic


    Original     		PDF