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    "TUNNEL DIODE" WIRE BONDING Search Results

    "TUNNEL DIODE" WIRE BONDING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    "TUNNEL DIODE" WIRE BONDING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    back Tunnel diode

    Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


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    PDF MIL-PRF-19500 MIL-PRF-35834 back Tunnel diode mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes

    MBD5057

    Abstract: No abstract text available
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


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    PDF MIL-PRF-19500 MIL-PRF-35834 MBD5057

    MP1601

    Abstract: MP1303 MP1301
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304


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    PDF MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1601 MP1303 MP1301

    TUNNEL DIODE

    Abstract: tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304


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    PDF MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 TUNNEL DIODE tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452

    "tunnel diode" chip assembly

    Abstract: "tunnel diode" wire bonding Ablestik gold embrittlement DATASHEET TUNNEL DIODE germanium diode Metelics Tunnel Diode
    Text: Application Note Chip and Beam Lead Handling Chip and beam lead devices are packaged for shipment in either waffle packs or Gel-Packs . Chips in waffle packs are somewhat free to move around their wells, and can be accidently dislodged rather easily when the waffle pack is


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    PDF 603-641-SEMI "tunnel diode" chip assembly "tunnel diode" wire bonding Ablestik gold embrittlement DATASHEET TUNNEL DIODE germanium diode Metelics Tunnel Diode

    SO20-300

    Abstract: QFP PACKAGE thermal resistance SO14-150 MBK360 SOT411 QFP-80-14 die bond diode handbook MBK368 QFP120
    Text: CHAPTER 6 THERMAL DESIGN CONSIDERATIONS page Introduction 6-2 Thermal resistance 6-2 Junction temperature 6-2 Factors affecting Rth j-a 6-2 Thermal resistance test methods 6-3 Test procedure 6-3 Forced air factors for thermal resistance 6-4 Thermal resistance data - assumptions and precautions


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    PDF OT111-1 OT157-2 DBS13P OT141-6 DBS17P OT243-1 DBS23P OT411-1 HSOP20 OT418-2 SO20-300 QFP PACKAGE thermal resistance SO14-150 MBK360 SOT411 QFP-80-14 die bond diode handbook MBK368 QFP120

    D3PAK

    Abstract: tunnel diode application to247 pcb footprint FR4 substrate height and thickness APT9503 APT4016SN "tunnel diode" chip assembly Thermalcote THE 249
    Text: APPLICATION NOTE APT9503 By Kenneth W. Dierberger and Denis R. Grafham INNOVATIVE MOUNTING TECHNIQUES ENHANCE THERMAL PERFORMANCE OF THE SURFACE-MOUNT D3 PAK PACKAGE PRESENTED AT POWERSYSTEMS WORLD INTERNATIONAL CONFERENCE & EXHIBIT SEPTEMBER 12, 1995 Page 1


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    PDF APT9503 B-1330 O-247, D3PAK tunnel diode application to247 pcb footprint FR4 substrate height and thickness APT9503 APT4016SN "tunnel diode" chip assembly Thermalcote THE 249

    koike relays

    Abstract: ed27 smd diode EM 231 WIRING DIAGRAM corona discharge circuit simulation smd transistor marking xy TOSHIBA Thyristor tunnel diode GaAs QFP100 injection molding machine wire diagram position sensitive diode circuit
    Text: [ 2 ] Semiconductor Reliability Contents 1. Reliability Concept . 1 1.1 Defining and Quantifying Reliability. 1 1.2 1.3 Reliability and Time. 1


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    PDF NS-15, koike relays ed27 smd diode EM 231 WIRING DIAGRAM corona discharge circuit simulation smd transistor marking xy TOSHIBA Thyristor tunnel diode GaAs QFP100 injection molding machine wire diagram position sensitive diode circuit

    D2863-77

    Abstract: Plastic Encapsulate Diodes bond wire copper hermetic packages PCB land circuit for wind mill footprint plcc 208 cmos methane SENSOR land pattern PQFP 208
    Text: GENERAL INFORMATION Packages INTRODUCTION P lastic surface-mount package designs were developed in the late 1970s in answer to the demand for costeffective solutions to achieving greater board density without sacriÞcing reliability or functionality. Recent developments in these


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    PDF 1970s D2863-77 Plastic Encapsulate Diodes bond wire copper hermetic packages PCB land circuit for wind mill footprint plcc 208 cmos methane SENSOR land pattern PQFP 208

    transistor c3150

    Abstract: c3271 KEMA KEUR thermostat C4108
    Text: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for


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    PDF E3842S E3843S EO24C0045510 EO26C0045510 EO28C0045510 EO28P0181510 EO28P0501510 EO30C0045510 SP00C0011010 SP00C0012010 transistor c3150 c3271 KEMA KEUR thermostat C4108

    C5802

    Abstract: c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution
    Text: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for


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    PDF E3842S E3843S EO24C0045510 EO26C0045510 EO28C0045510 EO28P0181510 EO28P0501510 EO30C0045510 SP00C0011010 SP00C0012010 C5802 c1226a modern china tv 8893 circuit diagram c5888 Reducing sleeve, AWG 16-20 8741 substitution

    transistor A562

    Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,


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    PDF MIL-PRF-19500P MIL-PRF-19500N transistor A562 A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE

    systron Donner 410

    Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES


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    PDF MIL-STD-750E MIL-STD-750D systron Donner 410 MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor

    60 SMD 5050 Ultra Bright LEDs

    Abstract: MMA 0204 HV - Professional
    Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative


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    PDF VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional

    R-PDSO-G14 footprint

    Abstract: NKT 275 transistor powerflex 9214-KT D(R-PDSO-G14) Package transistor ktc 1270 hot wire anemometer block diagram mil Constantan bond wire powerflex 70 100C
    Text: Printed in U.S.A. 08–96 * SLIT115 PowerFLEX  Surface Mount Power Packaging SLIT115 September 1996 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


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    PDF SLIT115 R-PDSO-G14 footprint NKT 275 transistor powerflex 9214-KT D(R-PDSO-G14) Package transistor ktc 1270 hot wire anemometer block diagram mil Constantan bond wire powerflex 70 100C

    CAR ALTERNATOR REGULATOR testing

    Abstract: MR2525I CAR ALTERNATOR REGULATOR 24V alternator load dump Alternator regulator alternator thermal shock AUML2220 AN9312 Transient Voltage Suppressor diode application note Syfer Capacitors
    Text: Harris Semiconductor No. AN9312.2 Harris MOVs March 1995 Suppression of Transients in an Automotive Environment Author: Martin Corbett Introduction Market surveys have shown that, while the automotive market is growing about 2% a year in terms of new cars, the


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    PDF AN9312 J1113, AN9002. DB450. AN9108. CAR ALTERNATOR REGULATOR testing MR2525I CAR ALTERNATOR REGULATOR 24V alternator load dump Alternator regulator alternator thermal shock AUML2220 Transient Voltage Suppressor diode application note Syfer Capacitors

    JEDEC Matrix Tray outlines

    Abstract: IspLSI PCMCIA copper bond wire micro semi BGD35
    Text: Packages INTRODUCTION Vantis provides its programmable logic devices PLDs in a wide range of packages. These packages provide benefits such as high power dissipation capability, small footprint, and high I/O. This section provides details about the packages that Vantis supplies.


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    PDF JESD51, JEDEC Matrix Tray outlines IspLSI PCMCIA copper bond wire micro semi BGD35

    footprint jedec MS-026 TQFP

    Abstract: PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas
    Text: Packages INTRODUCTION Vantis provides its programmable logic devices PLDs in a wide range of packages. These packages provide benefits such as high power dissipation capability, small footprint, and high I/O. This section provides details about the packages that Vantis supplies.


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    PDF G46-88 footprint jedec MS-026 TQFP PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas

    back Tunnel diode

    Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
    Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth


    OCR Scan
    PDF MIL-STD-19500 -65to+ 17dBmCW MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26 MBD-205s back Tunnel diode "back diode" Germanium power DIODE tunnel MBD back diode

    MBD3057-C18

    Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
    Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability


    OCR Scan
    PDF MIL-STD-195 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54temperature, MBD3057-C18 MBD5057-C18 back Tunnel diode MBD-3057-C18 MBD5057 MBD2057-C18 MBD1057

    MBD3057-C18

    Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
    Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS


    OCR Scan
    PDF MIL-STD-19500 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD3057-C18 MBD2057-C18 DIODE e26 back Tunnel diode MBD1057

    MBD3057-C18

    Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
    Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth


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    PDF

    MBD3057-C18

    Abstract: back Tunnel diode
    Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d


    OCR Scan
    PDF

    MBD2057-C18

    Abstract: No abstract text available
    Text: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C


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    PDF MIL-STD-19500 MBD2057-C18