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    "VLSI TECHNOLOGY" ABSTRACT FOR Search Results

    "VLSI TECHNOLOGY" ABSTRACT FOR Result Highlights (5)

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    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
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    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
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    "VLSI TECHNOLOGY" ABSTRACT FOR Datasheets Context Search

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    USE OF TRANSISTOR

    Abstract: Marquardt Switches transistor model list
    Text: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the


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    "RF MOSFETs"

    Abstract: "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		AN1226 "RF MOSFETs" "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Order number: AN1405 Rev 1, 09/2001 APPLICATION NOTE AN1405 ECL Clock Distribution Techniques By: Todd Pearson ECL Applications Engineering ABSTRACT This application note provides information on system design using ECL logic technologies for reducing system clock skew


    Original     		AN1405 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design using ECL logic technologies for reducing system clock skew


    Original     		AN1405/D AN1405 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design using ECL logic technologies for reducing system clock skew


    Original     		AN1405/D AN1405 PDF

    flash "high temperature data retention" mechanism

    Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
    Text: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: akotov@sst.com Abstract––Program/erase endurance data for SuperFlash


    Original     		32Kbit flash "high temperature data retention" mechanism Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374 PDF

    "vlsi technology" abstract

    Abstract: magnetic read switch circuit current conveyors BL14 "vlsi technology" abstract for free ieee paper on vlsi
    Text: To be published at VLSI Symposium 2002 A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects M. Durlam, P. Naji, A. Omair, M. DeHerrera, J. Calder, J. M. Slaughter, B. Engel, N. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. Kyler, J. Ren, J. Molla, B. Feil, R. Williams, S. Tehrani


    Original     		256kb "vlsi technology" abstract magnetic read switch circuit current conveyors BL14 "vlsi technology" abstract for free ieee paper on vlsi PDF

    "RF MOSFETs"

    Abstract: n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		AN1226 "RF MOSFETs" n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note PDF

    vhdl projects abstract and coding

    Abstract: vhdl convolution coding "vlsi technology" abstract XCV200 Visicom
    Text: Success Story VisiCom Uses Xilinx FPGAs for a Reconfigurable The combination of the Virtex hardware, associated software tools, and engineering process improvements have proven to be a great success. Image Processing Module by Tamara Snowden, Public Relations, Xilinx, tamaras@xilinx.com


    Original     		XCV-200 vhdl projects abstract and coding vhdl convolution coding "vlsi technology" abstract XCV200 Visicom PDF

    Untitled

    Abstract: No abstract text available
    Text: 4. Precautions for 1C Application 1 Absolute maximum ratings This value varies with the amount of 1C integration in package types. The maximum ratings for semiconduc­ tor devices are normally specified by “ absolute maximum ratings" The values shown in the maximum ratings table must


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    JIS-C-7022

    Abstract: No abstract text available
    Text: 4. 1 Precautions for 1C Application Absolute m axim um ratings A g en eral exam ple on the relation with Absolute M axium Ratings. The maximum ratings for semiconductor devices are normally specified by “ absolute maximum ratings” . The values shown in the


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    TRANSISTOR 30GHZ

    Abstract: "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
    Text: Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF Circuits. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas, A J Manson and A Madni Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.


    Original     		30GHz 20GHz, TRANSISTOR 30GHZ "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode PDF

    DUSLIC

    Abstract: code for echo SICOFI-4 c2ku
    Text: Integrated Digital Line CODEC Architectures: A Tutorial Review Manish Bhardwaj Telecom Devices Signal Processing and Control Division Microelectronics Design Center Infineon Asia Pacific 168 Kallang Way Singapore 349253. e-mail: manish.bhardwaj@infineon.com


    Original     		1960s, DUSLIC code for echo SICOFI-4 c2ku PDF

    bsim3

    Abstract: bsim3 circuit model Tech MOS Technology bsim3 model ESSDERC-98 gilbert cell sum harmonicbalance
    Text: A Large Signal Non-Quasi-Static MOS Model for RF Circuit Simulation A.J. Scholten, L.F. Tiemeijer, P.W.H. de Vreede and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2742723; Fax: +31-40-2743390; E-mail: andries.scholten@philips.com


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    Untitled

    Abstract: No abstract text available
    Text: 4. 1 Precautions for 1C Application Absolute m axim um rating s The m axim um ratings fo r sem iconductor devices are norm ally specified by “ absolute maximum ratin gs” . The values shown in the maximum ratings table m ust never be ex­ ceeded even fo r a moment.


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    tunnel diodes

    Abstract: 1E-18 injector tunnel detector ed 39
    Text: Tunneling Phenomenon in SuperFlashâ Cell A.Kotov, A.Levi, Yu.Tkachev, and V.Markov Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, Tel. 408 522-7350, akotov@sst.com Abstract––An extensive investigation of interpoly oxide conduction (erase) mechanism for SuperFlash cell is


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    mc34063 step down with mosfet

    Abstract: abstract of battery charging circuit using scr 1000w class d circuit diagram schematics mc34063 h-bridge igbt pwm schematics circuit MC1466 MC34063 Boost MOSFET 500MHz Frequency Counter Using MECL 10 amp 12 volt solar charger circuits mc34063 solar charger h-bridge igbt pwm schematics circuit
    Text: BR1522/D Rev. 1, Oct-1999 Application Notes, Article Reprints and Engineering Bulletins ON Semiconductor Formerly a Division of Motorola Reference Materials Selector Guide Application Notes, Article Reprints and Engineering Bulletins Reference Materials Selector Guide


    Original     		BR1522/D Oct-1999 r14153 mc34063 step down with mosfet abstract of battery charging circuit using scr 1000w class d circuit diagram schematics mc34063 h-bridge igbt pwm schematics circuit MC1466 MC34063 Boost MOSFET 500MHz Frequency Counter Using MECL 10 amp 12 volt solar charger circuits mc34063 solar charger h-bridge igbt pwm schematics circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design


    Original     		AN1405/D AN1405 PDF

    "vlsi technology" abstract for

    Abstract: TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR
    Text: A New Complementary Bipolar Process featuring a Very High Speed PNP. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas and A J Manson. Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Abstract This paper introduces "Process HJ" a


    Original     		20GHz 30GHz, "vlsi technology" abstract for TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR PDF

    bit-slice

    Abstract: No abstract text available
    Text: Challenges of CAD Development for Datapath Design Tim Chan, Design Technology, Intel Corp. Amit Chowdhary, Design Technology, Intel Corp. Bharat Krishna, Design Technology, Intel Corp. Artour Levin, Design Technology, Intel Corp. Gary Meeker, Design Technology, Intel Corp.


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    QUANTUM CAPACITIVE

    Abstract: floating-gate 4156C flash "high temperature data retention" mechanism split-gate flash quantum dot
    Text: Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells Yuri Tkachev and Alexander Kotov Silicon Storage Technology, Inc. Sunnyvale, USA e-mail: ytkachev@sst.com Abstract—A simple technique for monitoring floating gate


    Original     		0-23A QUANTUM CAPACITIVE floating-gate 4156C flash "high temperature data retention" mechanism split-gate flash quantum dot PDF

    wavelet transform

    Abstract: wavelet power system TMS320C40 abstract on RTOS and multitasking Daubechies filter integer "frame grabber"
    Text: DSPS Fest ’99 An Integer Wavelet Transform, Implemented on a Parallel TI TMS320C40 Platform Page 1 AN INTEGER WAVELET TRANSFORM, IMPLEMENTED ON A PARALLEL TI TMS320C40 PLATFORM Francis Decroos1,2, Peter Schelkens1,2, Gauthier Lafruit2, Jan Cornelis1, Francky Catthoor2,3


    Original     		TMS320C40 B-1050 B-3001 Shap93] SPRU96] TMS320C40 Swel95] Thre95] wavelet transform wavelet power system abstract on RTOS and multitasking Daubechies filter integer "frame grabber" PDF

    MC10E111

    Abstract: MPC973 10H645 AN1405 E211
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order Number: AN1405/D Rev 1, 09/2001 ECL Clock Distribution Techniques AN1405 Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design


    Original     		AN1405/D AN1405 MC10E111 MPC973 10H645 AN1405 E211 PDF

    hot electron devices

    Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst
    Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li


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