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    *5BS* TRANSISTOR Search Results

    *5BS* TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    *5BS* TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5Cs transistor

    Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
    Text: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16


    Original     		PDF BC807. BC808. BC817. BC818. BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W 5Cs transistor 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs

    C1735

    Abstract: Q62702-C1735 d2495 ic 807 Q62702-C1689 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1736 marking 5Cs
    Text: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration


    Original     		PDF Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 C1735 Q62702-C1735 d2495 ic 807 Q62702-C1689 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1736 marking 5Cs

    Q62702-C1689

    Abstract: ic 807 QBC807 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1735 Q62702-C1736 marking code 359 sot-23 marking code BC
    Text: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN 2 3 1 Type Marking Ordering Code Pin Configuration


    Original     		PDF Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 Q62702-C1689 ic 807 QBC807 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1735 Q62702-C1736 marking code 359 sot-23 marking code BC

    transistor 5bs

    Abstract: 5BS transistor GSA1576A GSC4081
    Text: ISSUED DATE :2005/02/18 REVISED DATE : GSC4081 NPN EPITAXIAL PLANAR TRANSISTOR Description The GSC4081 is designed for use in driver stage of AF amplifier and general purpose amplification. Features Low Cob. Cob=2.0 pF Typ. Complements the GSA1576A Package Dimensions


    Original     		PDF GSC4081 GSC4081 GSA1576A transistor 5bs 5BS transistor GSA1576A

    Untitled

    Abstract: No abstract text available
    Text: BC807U PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


    Original     		PDF BC807U VPW09197 EHA07175 EHP00215 EHP00214 EHP00210 EHP00216 Aug-29-2001

    MARKING 1B SOT23

    Abstract: 5As SOT23 1B SOT23 5cs sot23 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40
    Text: BC807, BC808 PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E


    Original     		PDF BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 MARKING 1B SOT23 5As SOT23 1B SOT23 5cs sot23 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40

    807u

    Abstract: 3CMA EHA07175
    Text: BC 807U PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2


    Original     		PDF VPW09197 EHA07175 SC-74 EHP00215 EHP00214 EHP00210 EHP00216 Apr-21-1999 807u 3CMA EHA07175

    marking 5bs

    Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
    Text: BC807W, BC808W PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package


    Original     		PDF BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W OT323 BC807-25W BC807-40W marking 5bs BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W

    VSO05561

    Abstract: 807W
    Text: BC 807W, BC 808W PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC 817W, BC 818W NPN 1 Pin Configuration VSO05561 Type Marking Package


    Original     		PDF VSO05561 07-16W OT-323 07-25W 07-40W 08-16W 08-25W VSO05561 807W

    5Cs transistor

    Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
    Text: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package


    Original     		PDF 07-16W BC817W, BC818W Q62702-C2325 OT-323 07-25W Q62702-C2326 07-40W 5Cs transistor Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328

    5Bs sot-23

    Abstract: marking 5bs 3CMA
    Text: BC 807, BC 808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC 817, BC 818 NPN 1 Type Marking Pin Configuration BC 807-16


    Original     		PDF OT-23 VPS05161 Sep-27-1999 EHP00214 EHP00215 5Bs sot-23 marking 5bs 3CMA

    Untitled

    Abstract: No abstract text available
    Text: BC807W, BC808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking


    Original     		PDF BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W OT323 BC807-25W BC807-40W

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E


    Original     		PDF BC807, BC808 BC817, BC818 VPS05161 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As


    Original     		PDF BC807, BC808 BC817, BC818 VPS05161 BC807-16 BC807-25 BC807-40 BC808-25 BC808-40

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC7004 (Tentative) Silicon NPN epitaxial planar type For low frequency output amplification • Absolute Maximum Ratings Ta = 25°C Parameter  Package  Code MiniP3-F2-B Symbol Rating Unit


    Original     		PDF 2002/95/EC) DSC7004

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC8004 (Tentative) Silicon NPN epitaxial planar type For low frequency output amplification • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit  Package Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) DSC8004

    DSC7004

    Abstract: DSA7004 ZJD00359BED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC7004 Silicon NPN epitaxial planar type For low frequency output amplification Complementary to DSA7004 • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Eco-friendly Halogen-free package


    Original     		PDF 2002/95/EC) DSC7004 DSA7004 DSC7004 DSA7004 ZJD00359BED

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC8004 Silicon NPN epitaxial planar type For low frequency output amplification Complementary to DSA8004 DSC7004 in MT-2 through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) DSC8004 DSA8004 DSC7004 DSC8004

    Q62702-C2325

    Abstract: No abstract text available
    Text: SIEMENS BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain * Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN 2 Q62702-C2325 1 =B BC 807-25W 5Bs Q62702-C2326


    OCR Scan     		PDF 07-16W BC817W, BC818W Q62702-C2325 07-25W Q62702-C2326 07-40W Q62702-C2327 OT-323 08-16W Q62702-C2325

    transistors BC 457

    Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
    Text: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration


    OCR Scan     		PDF Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 cur100 transistors BC 457 BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23

    5BS transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.


    OCR Scan     		PDF BF908WR OT343R 0CH2274 RC281 DCH2275 OT343R. 5BS transistor

    BC859

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
    Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration


    OCR Scan     		PDF BC859 BC860 BC859A BC859B BC859C BC860A BC860B BC860C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33

    CQ 419

    Abstract: TLE4264G a913 voltage regulator sot 223 235L AEB01527 AEP01526 Q67006-A9139 AVQ15
    Text: a23SbD5 OOlb St b ?DT SIEM ENS 5-V L o w -D rop F ixed -V oltag e R egulator T L E 4264 G Features • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low current consumption Overtemperature protection Short-circuit proof Suitable for use in automotive electronics


    OCR Scan     		PDF fiE35bDS Q67006-A9139 P-SOT223 OT-223 P-SOT223-4-1 CQ 419 TLE4264G a913 voltage regulator sot 223 235L AEB01527 AEP01526 AVQ15

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CMPNTS blE D WkTM HEW LETT mHEM P A C K A R D 4 4 4 7 5 A 4 D D 1 0 D 1 3 3ET • H P A MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Chip Outline1 Features • • • • • ■ INA-01100 Cascadable 50 Q Gain Block Low Noise Figure: 1.7 dB typical at 100 MHz


    OCR Scan     		PDF INA-01100 INA-01100 fabricat-12