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    *C2611 TRANSISTOR Search Results

    *C2611 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    *C2611 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2611

    Abstract: c2611 transistor
    Text: Transistor IC Transistors DIP SMDType Type SMD Type Product specification C2611 SOT-89 Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 • Features 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 ● Collector Current: IC=0.2A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1 2.60 +0.1 -0.1 +0.1


    Original     		PDF C2611 OT-89 C2611 c2611 transistor

    c2611 transistor

    Abstract: transistor C2611 C2611 datasheet of ic 555 IC 555
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO—92 C2611 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.75 W（Tamb=25℃） 1. BASE Collector current 2.COLLECTOR ICM : 0.2 Collector-base voltage V BR CBO : 600


    Original     		PDF O--92 C2611 270TYP 050TYP c2611 transistor transistor C2611 C2611 datasheet of ic 555 IC 555

    c2611 transistor

    Abstract: C2611
    Text: Transistors SMD Type NPN Power Transistor C2611 SOT-89 Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 • Features 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 ● Collector Current: IC=0.2A 2 3 +0.1 0.44-0.1 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.53-0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 +0.1


    Original     		PDF C2611 OT-89 c2611 transistor C2611

    transistor C2611

    Abstract: c2611 transistor C2611 a 2611 2611 A 2611 data sheet transistor 2611
    Text: C2611 C 2611 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF C2611 O-251 transistor C2611 c2611 transistor C2611 a 2611 2611 A 2611 data sheet transistor 2611

    c2611 transistor

    Abstract: C2611 transistor C2611 to-126 npn switching transistor 400v *c2611 transistor
    Text: C2611 NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.900 4.100 3.000 3. BASE 3.200 10.60 0 11.00 0 3 0.000 0.300 2 1 Features — 2.100 2.300 power switching applications 1.170 1.370 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF C2611 O-126 O-126 100mA, c2611 transistor transistor C2611 to-126 npn switching transistor 400v *c2611 transistor

    C2611

    Abstract: MJE-13002 lb123 MJE13002 2SB772 MJE13003 MJE-13003 controler 2SD882 ecb transistors
    Text: TO-251 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . PD TYPE NPN *Tc= ICBO Ic VCBO VCEO * ICEO OR 25℃ PNP mW ▲ (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (mA) (mA) (V) (mA) (MHZ) 123 60-400 60-400 2 2 1000 1000 80 90 ECB


    Original     		PDF O-251 2SB772 2SD882 C2611 MJE13002 MJE13003 LB123 LB123 MXB1184L C2611 MJE-13002 MJE-13003 controler ecb transistors

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		PDF MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064

    c2611 transistor

    Abstract: *c2611 transistor C2611
    Text: WC C TO-251_Piastjc-Encapsulate Transistors^ ^ C2611 TRANSISTOR NPN FEATU R E S 1 i i I 1 1 T O -2 5 1 P cm: 1W (Tamb=25°C) 1 BASE . _ ! i i i ! IcM: 0.2 A 2.C O L L E C T O R : : i J U 1 2 3 V(BR)CBO: 600 V 3.E M I T T E R junction tem perature range


    OCR Scan     		PDF C2611 1501c 100mA c2611 transistor *c2611 transistor

    c2611 transistor

    Abstract: transistor C2611 transistor npn Pcm 1W C2611 200YA
    Text: TO-251 Plastic-Encapsulate Transistors C2611 TRANSISTOR NPN FEATURES .• > : L ^ rer d is s ip a t io n ''• ¿ Ì ì W / Ì Ì Ì m Ì . ^ S ~ '/ V ^ v i - • & ’ TO-251 P cm: ^ ' 1—ÎÎ if •- » - > 'ÿ - 1W (Tamb=25°C) C o lle c t o r c u rr e n t


    OCR Scan     		PDF O-251 C2611 O-251 100mA c2611 transistor transistor C2611 transistor npn Pcm 1W 200YA