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    0/TRANSISTORS 132 GD Search Results

    0/TRANSISTORS 132 GD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    0/TRANSISTORS 132 GD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    FDPF 33N25T

    Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25 FDPF33N25 FDPF33N25T FDPF 33N25T 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    mosfet triggering circuit USING TL494

    Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
    Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D

    Mitsubishi transistor rf final

    Abstract: M57729
    Text: MITSUBISHI RF POWER MODULE M57729 430-450MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING 66+ 1 60 ± 1 2 -R 2 ±0 .3 V / w GD 0 0.8 ± 0.2 12±1 16.5±1 PIN : 33 ±1 © P in : RF INPUT ©VCC1 ; 1st. DC SUPPLY © V C C2 : 2nd. DC SUPPLY


    OCR Scan     		PDF M57729 430-450MHZ, Mitsubishi transistor rf final M57729

    2SC3219

    Abstract: x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3
    Text: POWER TRANSISTORS SHINDENGEN ELECTRIC HF G 3SE J> m 023.^307 GDGOaifl G ISHE J age * Ultra High Speed Switching Transisto F3 series 0 1 pel EIAJ No. » tt Ä * S fc Absolute Maximum Ratings £ Type No. Vcbo VCEO VEBO 3220 • lo IB PT Tstg IJ [•c ] DcJ V oeo


    OCR Scan     		PDF 2SC3219 T6V20F3 T10W20F3 T6M20F3 T10M20F3 TP3V45FX y4053 T5V45FX TP5V45FX T8V45FX x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3

    IRF150

    Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
    Text: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 | “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, |RF152, IRF153


    OCR Scan     		PDF 7S001 IRF150, IRF151, RF152, IRF153 IRF152 IRF153 IRF150 R01E MOSFET IRF150 IRF151 IRF162 IRF160

    kvp smd

    Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
    Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD


    OCR Scan     		PDF 600mA 220mA 200mA 175mA 150mA 100mA 500mA kvp smd kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id


    OCR Scan     		PDF XN1872 XN1D874/XP1D874 2SK198 2SK621 XN1D873/XP1D873 NPNf2SD132R^ SO-10C SO-14CD79) SO-14

    Untitled

    Abstract: No abstract text available
    Text: 0 7 7 3 2 ^ GDD3322 443 blE D SUPERTEX INC ISTX 0 Supertex inc. High-Voltage Integrated Circuit Custom Design and Process Capabilities HVIC Custom Capabilities By design, our logic circuitry is particularly latch-up resistant for increased reliability in noisy environments. This is especially


    OCR Scan     		PDF GDD3322

    SC1741

    Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
    Text: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2


    OCR Scan     		PDF SIP10) 801BX100) Nd022-01 dd022-01 dd92l-01 SC1741 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL

    TRANSISTORS 132 GD

    Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
    Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150

    Untitled

    Abstract: No abstract text available
    Text: FSJ260D, FSJ260R S e m iconductor 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rQs^oN = 0.050£2 The D iscrete Products Operation of Harris Sem iconductor has developed a series of R adiation Hardened M O SFETs


    OCR Scan     		PDF FSJ260D, FSJ260R MIL-S-19500

    p6020

    Abstract: TIP664 TIP-663 TIP663 TIP-665
    Text: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F | fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29


    OCR Scan     		PDF TIP663, TIP664, TIP665 hFE---250 T-33-29 p6020 TIP664 TIP-663 TIP663 TIP-665

    2SC2407

    Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­


    OCR Scan     		PDF L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592

    32khz crystal oscillator

    Abstract: No abstract text available
    Text: Section 13 H8/3814 Series Electrical Characteristics 13.1 H8/3814 Series Absolute Maximum Ratings Table 13-1 lists the absolute maximum ratings. Table 13-1 Absolute Maximum Ratings Item Symbol Value Unit Power supply voltage Vcc -0 .3 to +7.0 V Analog power supply voltage


    OCR Scan     		PDF H8/3814 00bl7GS 00bl707 00bl70Ã 44Tb2G4 32khz crystal oscillator

    transistor A431

    Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a

    y112

    Abstract: BGY112A BGY112B BGY112C DD302
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l GQ3QSÖD T4M M A P X Philips Components Data sheet status Preliminary specification date of issue May 1991 B G Y 1 1 2 A/1 1 2 B/1 1 2 C VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier


    OCR Scan     		PDF /112B/112C BGY112A BGY112B BGY112C bbS3R31 DD302Ã BGY112A/112B/112C OT288C. y112 BGY112C DD302

    TRANSISTORS 132 GD

    Abstract: No abstract text available
    Text: J308 thru J310* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource V o ltag e V DS 25 Vdc G ate-Source V o ltage V GS 25 Vdc Forw ard Gate C u rrent >GF 10 m A dc Total Device D issipation Cw T a = 25°C Derate above 25°C


    OCR Scan     		PDF O-226AA) TRANSISTORS 132 GD

    IC BL 176A

    Abstract: No abstract text available
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan     		PDF LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA IC BL 176A

    Untitled

    Abstract: No abstract text available
    Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted


    OCR Scan     		PDF CF003 CF003-03 CF003 CF003-01 n745D3

    7 amps pnp transistor

    Abstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module
    Text: E C I SEMICONDUCTOR MAE D • 305fl7b7 0 0 0 0 D7 4 Oôb « E C I S -jy DESCRIPTION The ECI Semiconductor EM series has been generated to provide cost and space effective high performance analog system solutions in silicon for your specific application. The EM family of low-cost 30v Bipolar Gridded Semicustom Arrays is


    OCR Scan     		PDF 302A7L7 0D00074 302fl7b7 7 amps pnp transistor 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module

    dilmon 28

    Abstract: OA34
    Text: bBE J> m 3 7 bflSEE 0 0 x 7 7 3 b 'lO'i GEC PLESSEY Si PLSB GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2322-2.1 ULA DS SERIES HIGH PERFORMANCE ARRAYS FOR 100MHz DIGITAL ASIC SYSTEMS Supersedes June 1990 edition GEC Plessey Semiconductors DS Series of ULAs has been


    OCR Scan     		PDF DS2322-2 100MHz dilmon 28 OA34