Untitled
Abstract: No abstract text available
Text: vMyjxiwi 19-0252; Rev 0; 4/94 Low-Cost, Triple, 8-B it Voltage-Output DACs w ith S erial In te rfa c e _ Features ♦ Operate from a Single +5V MAX512 or +3V (MAX513) Supply, or from Bipolar Supplies ♦ Low Power Consumption 1mA Operating Current
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OCR Scan
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MAX512)
MAX513)
14-Pin
MAXS12CPD
MAX512CSD
MAX513CPD
MAX513CSD
MAX513C/D
MAX513EPD
MAX513ESD
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PDF
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2N5551
Abstract: Transistor KST-9041-000 transistor equivalent CT 2n5551 2N5401 2n5401 application
Text: 2N5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with 2N5401
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2N5551
2N5401
KST-9041-000
2N5551
Transistor
KST-9041-000
transistor equivalent CT 2n5551
2N5401
2n5401 application
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PDF
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2N5401
Abstract: 2N5401N 2N5551N
Text: 2N5401N Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with 2N5551N
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2N5401N
-160V,
-160V
2N5551N
2N5401
O-92N
KSD-T0C040-000
2N5401
2N5401N
2N5551N
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PDF
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2SB829
Abstract: 2SD1065
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB829 DESCRIPTION •High Collector Current: IC= -15A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065
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2SB829
2SD1065
2SB829
2SD1065
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Untitled
Abstract: No abstract text available
Text: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 95V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Ultra Low VCE(SAT) 0.5V @ IC / IB = 3.5A / 40mA Excellent DC current gain characteristics
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TSD2098A
OT-89
TSD2098ACY
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Transistor A12
Abstract: No abstract text available
Text: TSC1203E High Voltage NPN Transistor TO-263 2 D PAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 1050V BVCEO 550V IC 5A VCE(SAT) Features ● ● 0.5V @ IC=1A, IB=200mA Ordering Information High Voltage Capability High switching speed
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TSC1203E
O-263
200mA
TSC1203ECM
O-263
800pcs
Transistor A12
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PDF
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SP6330
Abstract: SP6330EK1-L-W-G-C SP6332 SP6334 09 06 148 2925
Text: SP6330, SP6332 and SP6334 Quad µPower Supervisory Circuits with Manual Reset & Watchdog FEATURES • Low operating voltage of 1.6V ■ Low operating current of 20µA typical ■ Monitors up to four supplies simultaneously ■ Adjustable inputs monitor down to 0.5V
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SP6330,
SP6332
SP6334
100ms,
200ms
400ms
SP6330
SP6330EK1-L-W-G-C/TR
Nov20-06
SP6330
SP6330EK1-L-W-G-C
SP6332
SP6334
09 06 148 2925
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PDF
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smd transistor marking cf
Abstract: MARKING CF smd marking CF VEBO-15V SMD BR 17 transistor smd cf 2SC3650
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity,
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2SC3650
500mA
500mA,
smd transistor marking cf
MARKING CF
smd marking CF
VEBO-15V
SMD BR 17
transistor smd cf
2SC3650
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PDF
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2SA1513
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -12A APPLICATIONS
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2SA1513
-50mA
2SA1513
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smd transistor 2A
Abstract: smd transistor MARKING 2A 2SA1314 2SC2982
Text: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter
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2SA1314
-50mA)
2SC2982
-10mA
-50mA
smd transistor 2A
smd transistor MARKING 2A
2SA1314
2SC2982
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384
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2SC3515
2SA1384
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SMD TRANSISTOR MARKING 2A
Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
Text: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage
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2SB1188
100ms
30MHz
SMD TRANSISTOR MARKING 2A
smd transistor 2A
MARKING 2A
smd 2a transistor
BC MARKING
05AF
2SB1188
transistor smd marking BC
TRANSISTOR SMD w
smd transistor marking bc
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO
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2SB1188
100ms
30MHz
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PDF
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GJ1182
Abstract: No abstract text available
Text: CORPORATION G J 11 8 2 ISSUED DATE :2005/10/06 REVISED DATE : P NP S ILI CO N E PITAX I AL PL ANAR T RANSI STOR Description The GJ1182 is designed for medium power amplifier applications. Features Low collector saturation voltage : VCE sat =-0.5V(Typ.) Package Dimensions
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GJ1182
O-252
GJ1182
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE sat , VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max
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2SD1758
O-252
-500mA,
100MHz
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PDF
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GM1188
Abstract: GM1766
Text: CORPORATION G M 11 8 8 ISSUED DATE :2005/07/19 REVISED DATE :2005/10/19B PNP SILICON EPITAXIAL TRANSISTOR Description The GM1188 is designed for medium power amplifier applications. Features Low collector saturation voltage : VCE sat =-0.5V(Typ.) Complementary pair with GM1766
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2005/10/19B
GM1188
GM1766
OT-89
GM1766
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STN3904SF
Abstract: STN3906SF
Text: STN3906SF Semiconductor PNP Silicon Transistor Descriptions • General small signal amplifier • Switching application Features • Collector saturation voltage : VCE sat =-0.5V(Max.) • Low output capacitance : Cob=4.5pF(Max.) • Complementary pair with STN3904SF
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STN3906SF
STN3904SF
OT-23F
KST-2075-000
STN3904SF
STN3906SF
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PDF
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GN16
Abstract: LTC2910 LTC2910CDHC LTC2910CGN LTC2910IDHC
Text: LTC2910 Octal Positive/Negative Voltage Monitor DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 2910 is an octal input voltage monitor intended for monitoring multiple voltages in a variety of applications. Each input has a nominal 0.5V threshold, featuring
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LTC2910
LTC2908
OT-23
LTC2909
LTC2914
16-Lead
2910fb
GN16
LTC2910
LTC2910CDHC
LTC2910CGN
LTC2910IDHC
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PDF
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Untitled
Abstract: No abstract text available
Text: TSC741 High Voltage Fast-Switching NPN Power Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 1050V IC VCE SAT Features 2.5A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability ● High Switching Speed
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TSC741
O-220
50pcs
TSC741CZ
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PDF
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4UTC
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UC3383 CMOS IC PFM CONTROLLED, STEP-UP DC/DC CONVERTERS VARIABLE DUTY RATIO 4 5 2 1 SOT-25 DESCRIPTION The UTC UC3383 Series are PFM step-up DC/DC switching converter. The UTC UC3383 can support both large and small currents. It
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UC3383
OT-25
UC3383
OT-89
QW-R502-032
4UTC
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VR3 Voltage Regulators
Abstract: R5320G CE172
Text: ’99.11.11 CMOS Multi-LDOs for RF Unit R5320G Series n OUTLINE The R5320G Series are Multi voltage regulator ICs with high output voltage accuracy, extremely low supply current, low noise, low ON-resistance and high ripple rejection by CMOS process. The R5320G Series contain three voltage regulators. Each of
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R5320G
VR3 Voltage Regulators
CE172
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PDF
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Untitled
Abstract: No abstract text available
Text: R5328K SERIES Low voltage 3-Mode Dual LDO NO.EA-006-0825 OUTLINE The R5328K Series are dual 150mA voltage regulator ICs with 3-mode. The 3-mode describes that they are the inactive standby, the active fast mode, and the active low power mode. The two active modes can be
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R5328K
EA-006-0825
150mA
PLP2020-8,
R5328K)
GRM155B31A105KE15)
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PDF
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RQ5RW30A
Abstract: RQ5RW30B SC-82AB SC82-AB
Text: SMALL PACKAGE VOLTAGE REGULATOR RQ5RW SERIES APPLICATION MANUAL ELECTRONIC DEVICES DIVISION NO. EA-048-9803 NOTICE 1. The products and the product specifications described in this application manual are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to
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EA-048-9803
SC82AB
RQ5RW30A
RQ5RW30B
SC-82AB
SC82-AB
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PDF
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LT1735
Abstract: LT1764 LT1764EQ nte5437
Text: LT1764 Series 3A, Fast Transient Response, Low Noise, LDO Regulators U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Optimized for Fast Transient Response Output Current: 3A Dropout Voltage: 340mV at 3A Low Noise: 40µVRMS 10Hz to 100kHz
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LT1764
340mV
100kHz)
OT-23
LT1762
150mA,
LT1763
500mA,
LT1962
300mA,
LT1735
LT1764EQ
nte5437
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PDF
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