Untitled
Abstract: No abstract text available
Text: Industrial Current/Voltage Output Driver with Programmable Ranges AD5750 FEATURES Current output ranges: 4 mA to 20 mA, 0 mA to 20 mA or 0 mA to 24 mA, ±20 mA, and ±24 mA ±0.03% FSR total unadjusted error TUE ±5 ppm/°C typical output drift Voltage output ranges: 0 V to 5 V, 0 V to 10 V, ±5 V, and ±10 V,
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AD5750
32-lead
AD5750BCPZ-REEL71
CP-32-2
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SW101
Abstract: SRT2-AD04
Text: 9 Analog Input Remote Terminal Block SRT2-AD04 Add Analog Input Signals to a CompoBus/S System 1 Up to four analog inputs per terminal 1 Six input ranges, switch selected: 0 to 5 V, 1 to 5 V, 0 to 10 V, -10 to +10 V, 0 to 20 mA, and 4 to 20 mA 1 Takes only 1 ms to exchange each input
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SRT2-AD04
16-point
SRT2-AD04
C200HW-SRM21
CQM1-SRM21
C200PC-ISAP2-SRM
1-800-55-OMRON
SW101
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Untitled
Abstract: No abstract text available
Text: 9 Analog Output Remote Terminal Block SRT2-DA02 Add Analog Output Signals to a CompoBus/S System 1 One or two analog outputs per terminal 1 Five output ranges, switch selected: 0 to 5 V, 1 to 5 V, 0 to 10 V, -10 to +10 V, and 4 to 20 mA 1 2 ms to convert each output point
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SRT2-DA02
16-point
SRT2-AD04
C200HW-SRM21
CQM1-SRM21
C200PC-ISAP2-SRM
1-800-55-OMRON
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5761
2SC5761
2SC5761-T2
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TLP350
Abstract: 20CG10 E67349 EN60747-5-2 tlp350 IGBT gate drive inverter
Text: TLP350 Preliminary TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.
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TLP350
TLP350
UL1577
20CG10
E67349
EN60747-5-2
tlp350 IGBT gate drive inverter
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2SC5761
Abstract: 2SC5761-T2 2FB200 transistor s2p MARKING T16
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5761
2SC5761-T2
PU10212EJ02V0DS
2SC5761
2SC5761-T2
2FB200
transistor s2p
MARKING T16
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S-8423
Abstract: SEIKO S-8423NFX
Text: Rev.2.0 S-8423 Series BATTERY BACKUP IC The S-8423 Series is a CMOS IC designed for use in the switching circuits of main and backup power supplies of 3-V or 5-V operation microcomputers. It consists of two voltage regulators, three voltage detectors, a switchover circuit, and a control circuit. In addition to
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S-8423
S8423
SEIKO
S-8423NFX
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NESG2031M05
Abstract: NESG2031M05-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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NESG2031M05
PU10189EJ02V0DS
NESG2031M05
NESG2031M05-T1
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82c11
Abstract: SOT marking l33 82C53 82C16 82C31 82C58 82C42 82c53-5 82C56 82C59
Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 4 3 DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is
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82CXX
82CXX
OT-25
OT-23
100ppm/°
82CxxL-AE3-5-R
QW-R119-005
82c11
SOT marking l33
82C53
82C16
82C31
82C58
82C42
82c53-5
82C56
82C59
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RP101k
Abstract: No abstract text available
Text: RP101x SERIES 300mA LDO Voltage Regulator NO. EA-167-070305 OUTLINE The RP101 Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference
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RP101x
300mA
EA-167-070305
RP101
RP101X
RP101X281X)
RP101k
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82c11
Abstract: 82c56 82c53 82C31 pin DIAGRAM OF IC 82C55 82C25 82C51 82c53-5 82C58 82C42
Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 4 3 DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is extremely accurate with minimal temperature drift.
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82CXX
82CXX
OT-25
OT-23
100ppm/°
82CXXL
82CXXG
82Cxx-AE3-5-R
QW-R119-010
82c11
82c56
82c53
82C31
pin DIAGRAM OF IC 82C55
82C25
82C51
82c53-5
82C58
82C42
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NESG2031M05
Abstract: NESG2031M05-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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Original
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NESG2031M05
NESG2031M05
NESG2031M05-T1
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PDF
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82C11
Abstract: 82C16 82C25 82c12 82c56 l41 marking code 82C25 CAN 82C62 82C28 l33 marking sot23
Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 4 3 DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is
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82CXX
82CXX
OT-23
OT-25
100ppm/°
QW-R119-010
82C11
82C16
82C25
82c12
82c56
l41 marking code
82C25 CAN
82C62
82C28
l33 marking sot23
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82c11
Abstract: 82C56 82C12 82C42 82C58 l21 diode marking l48 diode marking marking codes LXX 05 82C16 SOT marking l33
Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 4 3 DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is
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82CXX
82CXX
OT-25
OT-23
100ppm/°
82CxxL-AE3-5-R
QW-R119-005
82c11
82C56
82C12
82C42
82C58
l21 diode marking
l48 diode marking
marking codes LXX 05
82C16
SOT marking l33
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4856a
Abstract: 2n4856a 2N485
Text: Tem ic 2N4856A/4857A/4858A S e m i c o n d u c t ors N-Channel JFETs Product Summary Part Number VQS off 2N4856A - 4 to - 10 -4 0 50 25 5 4 2N4857A - 2 to - 6 -4 0 20 40 5 4 2N 4858A -0 .8 to - 4 -4 0 8 60 5 4 (V) loss Min (mA) V(BR)GSS Min (V) Features iDSjon) Max
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OCR Scan
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2N4856A/4857A/4858A
2N4856A
2N4857A
S-52424--
l4-Apr-97
S-52424--Rev.
14-Apr-97
4856a
2N485
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Untitled
Abstract: No abstract text available
Text: ASI 2N6515 SILICON NPN TRANSISTOR DESCRIPTION: The 2N6515 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO-92 _ . 2 0 5 15 20 . 175 4 45) DIA. MAXIMUM RATINGS lc 500 mA V ce 250 V . .2 1 0 (5 33) .1 7 0 (4 32)
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2N6515
2N6515
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PDF
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2N5554
Abstract: 2N4856A 4857A 4856a sot23 fd
Text: Tem ic 2N4856A/4857A/4858A Siliconix N-Channel JFETs Product Summary P a rt N u m b e r V g S oB (V) V(BR)GSS M in (V) I d ss M in (mA) r DS(on) M ax (Û ) lö(off) lÿ p (pA) to N iy p (ns) 2N4856A - 4 to - 1 0 -4 0 50 25 5 4 2N4857A —2 to - 6 -4 0 20
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2N4856A/4857A/4858A
2N4856A
2N4857A
2N4858A
P-37406--Rev.
2N4856A
2N48S7A
2N4858A
2N5554
4857A
4856a
sot23 fd
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Untitled
Abstract: No abstract text available
Text: rz 7 SCS-THOMSON A T# [»^2 iajOT Q«S TDE0160 PROXIMITY DETECTOR • SUPPLY VOLTAGE : + 4 TO + 36 V ■ SUPPLY CURRENT : < 1.2 mA ■ OUTPUT TRANSISTORS : I = 20 mA ; V ce (sat) < 1 1 0 0 mV ■ OSCILLATOR FREQUENCY : < 1 MHz ■ LOSS RESISTANCE : 5 TO 50 k i l
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TDE0160
IP-14/2
E0160
E016vs
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PDF
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TDE0160
Abstract: No abstract text available
Text: = 7 SC STH O M SO N 1Ë TDE0160 PROXIMITY DETECTOR JPPLY VOLTAGE : + 4 TO + 36 V JPPLY CURRENT: <1.2 mA UTPUT TRANSISTORS : I = 20 mA ; ÜE sat ^1 10 0 m V SCILLATOR FREQUENCY : < 1 MHz )SS RESISTANCE : 5 TO 50 kQ. DIP-14/2 (Plastic) SO -14J CRIPTION "DE0160 is designed to detect metal bodies by
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TDE0160
DIP-14/2
DE0160
TDE0160DP
DIP-14)
0160FP
SO-14J)
DIP-14
SO-14J
TDE0160
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SH100G
Abstract: TDK tda
Text: SIEMENS CDR 3300-00 High-Speed Clock and Data Recovery Bipolar 1C Preliminary Data Features • • • • • • Data rate from 2.5 to 3.3 Gbit/s Supply range fro m -4 .0 V t o - 5 . 0 V Supply current 350 mA typ. Input sensitivity 20 mVpp differential BER = 10“ 12
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SH100G-based
19Q8-Dfi-1Fi
STM-16
P-TQFP-100-4
SH100G
TDK tda
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PDF
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Untitled
Abstract: No abstract text available
Text: U 63 4 H 2 5 6 PowerStore A v a i l a b l e in Q 1 / 9 7 Features □ High-performance CMOS non volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,1 5 and 20 ns Output Enable Access Times □ Iqq=20 mA at 200 ns Cycle Time □ Automatic STORE to EEPROM
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M3015
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PDF
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PC11760
Abstract: No abstract text available
Text: S G S - T H O M S O N k f o o M B iB lïœ iL iC T IïM D ! S E R IE S VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA . VERY LOW DROPOUT VOLTAGE 0.4V . VERY LOW QUIESCENT CURRENT (TYP. 50 nA IN OFF MODE, 500 mA IN ON MODE) . OUTPUT CURRENT UP TO 500 mA
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0068772-B
PC11760
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PDF
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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equivalent diode for 1n457
Abstract: IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135
Text: FAIRCHILD SEMICO NDU CTO R 3469674 04 F A IR C H IL D DE |34fc.citi74 0 0 H 7 4 S CI 4 SEM ICO NDU CTOR 84D 27459 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose
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PN5135/FTS05135
PN5136/FTS05136
PN5137/FTS05137
625mW
PN/FTS05135)
PN/FTS05136/7)
PN5142,
PN5143
PN5135
equivalent diode for 1n457
IN461A
IN484B
1N4848
458a diode
in462a
PN5142
in485b
PN5139
PN5135
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