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    0.25 CMOS Search Results

    0.25 CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    0.25 CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    5962-06203

    Abstract: 5962-07210 "rad" sram
    Text: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)


    Original     		PDF 28MHz 1250C) 66MHz 1x10-10 8x10-10 1x10-9 5962-06203 5962-07210 "rad" sram

    LC7367J

    Abstract: LC7367JM
    Text: Ordering number:ENN3095A CMOS IC LC7367J, 7367JM DTMF/PULSE Switchable Dialer Package Dimensions unit:mm 3059-DIP22S [LC7367J] 22 12 0.25 7.62 6.4 1 11 21.2 0.95 0.48 1.78 1.7 SANYO : DIP22S unit:mm 3073A-MFP30 [LC7367JM] 16 1 15 0.25 0.4 1.0 0.6 0.65 30


    Original     		PDF ENN3095A LC7367J, 7367JM 3059-DIP22S LC7367J] DIP22S 073A-MFP30 LC7367JM] 45max 58MHz) LC7367J LC7367JM

    71051

    Abstract: 71055 71059 EA-C10 0.18-um CMOS technology characteristics CMOS-10 RAC RAMBUS fi01 2127k CB-C10
    Text: EA-C10 2.5-Volt, 0.25-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25 µm drawn (0.18 µm L-effective) EA-C10 embedded array family offers both support for


    Original     		PDF EA-C10 25-Micron EA-C10 A12503EU1V0DS00 71051 71055 71059 0.18-um CMOS technology characteristics CMOS-10 RAC RAMBUS fi01 2127k CB-C10

    LC7367J

    Abstract: LC7367JM debounce IC MC speed dial circuit 3059 npn transistor
    Text: Ordering number:ENN3095A CMOS IC LC7367J, 7367JM DTMF/PULSE Switchable Dialer Package Dimensions unit:mm 3059-DIP22S [LC7367J] 22 12 0.25 7.62 6.4 1 11 21.2 0.95 0.48 1.78 1.7 SANYO : DIP22S unit:mm 3073A-MFP30 [LC7367JM] 16 1 15 0.25 0.4 1.0 0.6 0.65 30


    Original     		PDF ENN3095A LC7367J, 7367JM 3059-DIP22S LC7367J] DIP22S 073A-MFP30 LC7367JM] 45max 58MHz) LC7367J LC7367JM debounce IC MC speed dial circuit 3059 npn transistor

    0.18-um CMOS technology characteristics

    Abstract: NEC 71055 NEC V30MX DSPG 71055 STEPS 30175 V30MX VR10000 A1246 CMOS-10
    Text: DATA SHEET PRODUCT LETTER CB-C10 2.5 Volt 0.25-Micron CMOS Cell-Based ASIC PRELIMINARY Figure 1. Chip Size Package CSP Description NEC’s 0.25 µm (0.18 µm eff.) CB-C10 family incorporates ultra-high performance, deep submicron cell-based ASIC’s for high-end


    Original     		PDF CB-C10 25-Micron CB-C10 GB-MK14 0.18-um CMOS technology characteristics NEC 71055 NEC V30MX DSPG 71055 STEPS 30175 V30MX VR10000 A1246 CMOS-10

    ARM SRAM compiler

    Abstract: poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library
    Text: 0.25 µm CMOS Process Family FC025 0.25 µm CMOS process for 2.5V logic and mixed-signal applications Main Process Features with 3.3V or 5V I/O Single Poly and up to 5 Metal Layers FC025 Process section Pad Well Architecture: Retrograde Twin Well Nitride Pad


    Original     		PDF FC025 FC025 ARM SRAM compiler poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library

    transistor Bc 540

    Abstract: BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor 107ps BC 247 transistor bc 548
    Text: PF958-02 SLA60000 Series High Density Gate Array ● 0.25µm CMOS Gate Array ● Low power consumption ● Covered from 99k to 2,519k raw gates • DESCRIPTION The SLA60000 Series are CMOS Gate Arrays which are adopting on 0.25µm silicon gate process with 3


    Original     		PDF PF958-02 SLA60000 107ps 107ps 270ps 1600ps transistor Bc 540 BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor BC 247 transistor bc 548

    LVDS to eDP

    Abstract: CB10VX V30MZ VR41 nec cb core
    Text: CB-10VX 0.25 µm Features >> 0.25 µm drawn, 0.18 µm effective Ti-Silicide CMOS process >> Extensive support of state-of-the-art cores and interfaces >> Available gate counts from 597k to 21.3 million gates >> Supports 1.8 V and 2.5 V core voltages >> Significant low power dissipation of


    Original     		PDF CB-10VX CB-10VX A14735EE2V0PL00 LVDS to eDP CB10VX V30MZ VR41 nec cb core

    suf-3000

    Abstract: No abstract text available
    Text: SUF-3000 SUF-3000 0.25 GHz to 16 GHz, Cascadable pHEMT MMIC Amplifier 0.25 GHz to 16 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88 mm x 0.80 mm Product Description Features RFMD’s SUF-3000 is a monolithically matched broadband high IP3 gain block covering 0.25 GHz to 16 GHz. This pHEMT FET-based amplifier uses


    Original     		PDF SUF-3000 SUF-3000 DS090605

    oki cross

    Abstract: MG63P MG64P MG65P b0268
    Text: DATA SHEET O K I A S I C P R O D U C T S MG63P/64P/65P 0.25µm Embedded DRAM/ Customer Structured Arrays November 1998 MG63P/64P/65P 0.25µm Embedded DRAM/Customer Structured Arrays DESCRIPTION Oki’s 0.25 µm MG63P/64P/65P Application-Specific Integrated Circuit ASIC provides the ability to


    Original     		PDF MG63P/64P/65P MG63P/64P/65P 1-800-OKI-6994 oki cross MG63P MG64P MG65P b0268

    VCO 100mhz

    Abstract: 100mhz ring oscillator OSC 80MHZ
    Text: M25PL13S Data Sheet 1. General Description The M25PL13S is a 2.5V CMOS 0.25㎛ 1-poly, 3-metal analog programmable frequency synthesizer based on charged pump type PLL for an on-chip application using MagnaChip standard 0.25㎛ ASIC Process. M25PL13S has 5MHz to 320MHz output range. Operating


    Original     		PDF M25PL13S M25PL13S 320MHz 100MHz 160MHz( 320MHz 14-bit VCO 100mhz 100mhz ring oscillator OSC 80MHZ

    Untitled

    Abstract: No abstract text available
    Text: H25PL12S Data Sheet 1. General Description The H25PL12S is a 2.5V CMOS 0.25㎛ 1-poly, 3-metal analog programmable frequency synthesizer based on charged pump type PLL for an on-chip application using Hynix standard 0.25㎛ ASIC Process. H25PL12S has 5MHz to 320MHz output range. Operating frequency


    Original     		PDF H25PL12S 320MHz 160MHz( 320MHz 14-bit H25PL12S

    PI74AUC16244

    Abstract: PI74AUC16245 PI74SSTVF16857 PI74SSTVF16859 PI74SSTVF32852
    Text: Date: August 5, 2005 Subject: Pericom Reliability Qualification – CSM-S Fab 2’s CMOS, 0.25 µm, 2.5V, 1P3M Process Chartered Semiconductor Manufacturing – Singapore Fab 2’s CMOS, 0.25-µm, 2.5 volt, Single Poly/Triple Metal 1P3M process has been qualified to Pericom’s standard die level process


    Original     		PDF PI74SSTVF16857 PI74SSTVF16857 Q03003 PI74SSTVF16859, PI74SSTVF32852, PI74AUC16244, PI74AUC16245. PI74AUC16244 PI74AUC16245 PI74SSTVF16859 PI74SSTVF32852

    50MHz VCO schematic

    Abstract: 100MHz VCO schematic PLL VCO 3.5MHz
    Text: M25PL12S Data Sheet 1. General Description The M25PL12S is a 2.5V CMOS 0.25㎛ 1-poly, 3-metal analog programmable frequency synthesizer based on charged pump type PLL for an on-chip application using MagnaChip standard 0.25㎛ ASIC Process. M25PL12S has 5MHz to 320MHz output range. Operating


    Original     		PDF M25PL12S M25PL12S 320MHz 100MHz 160MHz( 320MHz 14-bit 50MHz VCO schematic 100MHz VCO schematic PLL VCO 3.5MHz

    siliconix VN10KM

    Abstract: VN0300D VN0300M VP1001P VQ1001J VQ1001P VNMH03
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VN0300D VN0300M VP1001P VQ1001J VQ1001P VNMH03

    VQ1000P

    Abstract: VN0610L VQ1000J VQ1000J/P parameter diode IN4001 siliconix VN10KM IN4001 VN10KE VN10KM VN10LE
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN0610L VQ1000J VQ1000J/P parameter diode IN4001 siliconix VN10KM IN4001 VN10KE VN10KM VN10LE

    VN10KM

    Abstract: siliconix VN10KM VN2222KM BSR64 BSR65 IN4933 VN10LM VN2222LM
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN10KM siliconix VN10KM VN2222KM BSR64 BSR65 IN4933 VN10LM VN2222LM

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J

    cs50-p

    Abstract: 406j VN10LE VN10KE VN2410M VN2222K siliconix wn VN10KM for 406j siliconix VN10KM
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m cs50-p 406j VN10LE VN10KE VN2410M VN2222K siliconix wn VN10KM for 406j siliconix VN10KM

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J

    siliconix VN10KM

    Abstract: VQ1001J VQ1001P
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) • d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VQ1001J VQ1001P

    VN88AD

    Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN88AD VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD

    D78 NEC

    Abstract: 986M
    Text: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­


    OCR Scan     		PDF CB-C10 CB-C10family D78 NEC 986M