pHEMT 6GHz
Abstract: TC3947 tc1401n
Text: TC3947 REV2_20080516 0.5W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 0.5W Typical Output Power at 6GHz • 12dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 37 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz
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TC3947
TC3947
TC1401N
pHEMT 6GHz
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0918A L & S BAND / 0.5W SMD non - matched DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
50pcs)
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mitsubishi 7805
Abstract: MGF0918A
Text: < High-power GaAs FET small signal gain stage > MGF0918A L & S BAND / 0.5W SMD non - matched DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
50pcs)
mitsubishi 7805
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NE960R575
Abstract: 0512f NE950R575
Text: 0.5W X, Ku-BAND POWER GaAs FET FEATURES NE960R575 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB PACKAGE OUTLINE 75 • HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz • HIGH EFFICIENCY: 30% TYP @ 14.5 GHz +0.15 -0.05 2 PLACES φ 1.8
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NE960R575
NE950R575
24-Hour
NE960R575
0512f
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NE950R575
Abstract: No abstract text available
Text: 0.5W X, Ku-BAND POWER GaAs FET FEATURES NE960R575 OUTLINE DIMENSIONS Units in mm • CLASS A OPERATION PACKAGE OUTLINE 75 • HIGH OUTPUT POWER • HIGH RELIABILITY +0.15 -0.05 2 PLACES φ 1.8 GATE 0.5 ± 0.1 SOURCE 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP
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NE960R575
NE950R575
24-Hour
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Untitled
Abstract: No abstract text available
Text: RO-P-DS-3076 Preliminary Information MAAPGM0040 11.0-15.0 GHz 0.5W Power Amplifier MAAPGM0040 Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0040 YWWLLLL Primary Applications ♦ Point-to-Point Radio
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RO-P-DS-3076
MAAPGM0040
APGM0040
MAAPGM0040
100pF
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SP2T FET Non–Reflective Switch With Driver 20 MHz–2 GHz AE002M2–29 Features Non–Reflective All Ports Low Current Consumption < 20 µA Two Line Control 1/2 Watt 1dB Compression Point Single +5V, Bias Supply J1 Fast Amplitude and Phase Settling Times
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AE002M2â
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 0.5W X, Ku-BAND POWER GaAs FET FEATURES_ OUTLINE DIMENSIONS NE960R575 Units in mm • CLASSA OPERATION PACKAGE OUTLINE 75 • HIGH OUTPUT POWER • HIGH RELIABILITY DESCRIPTION_ The NE950R575 Power GaAs FET covers the 4 GHz to 18
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NE960R575
NE950R575
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 0.5W X, Ku-BAND POWER GaAs FET FEATURES_ OUTLINE DIMENSIONS NE960R575 Units in mm • C LASS A O PERATION PACKAGE OUTLINE 75 • HIGH O U T P U T POW ER • HIGH RELIA B ILITY DESCRIPTION_ The NE950R575 Power GaAs FET covers the 4 GHz to 18
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NE960R575
NE950R575
NE950RS75
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sot-23 12w
Abstract: 12w sot-23 AF002C4
Text: GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz 0 A lpha AF002C1-39, AF002C4-39 Features • Low Cost SOT 23 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Blocks ■ Pin Diode Replacements ■ High Power Antenna Switches
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AF002C1-39,
AF002C4-39
AF002C1-39
0/-12V
sot-23 12w
12w sot-23
AF002C4
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GHz Power FET
Abstract: No abstract text available
Text: GaAs MMIC SP2T FET Non-Reflective Switch With Driver 20 MHz-2 GHz 0 Alpha AE002M2-29 Features • Non-Reflective All Ports ■ Low Current Consumption < 20 ^A ■ Two Line Control ■ 1/2 Watt 1dB Compression Point ■ Single +5V, Bias Supply ■ Fast Amplitude and Phase Settling Times
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OCR Scan
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AE002M2-29
MIL-H-38534
AE002M2-29
GHz Power FET
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GHz Power FET
Abstract: No abstract text available
Text: GaAs MMIC FET SPDT Switch EQAI^IìÉi in MS0P8 Package DC-2.5 GHz AS104-59 Features • Ultra Miniature Surface Mount Package ■ Footprint is 50% of SOIC 8 ■ Low Insertion Loss ■ Low Power Consumption ■ High Intercept Point Description This GaAs MMIC SPDT reflective switch is in an ultra
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AS104-59
MA01801
GHz Power FET
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AK802M2-12
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-2.5 GHz EüAlpha AK802M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption -20 mW per Arm ■ High IP3 +43 dBm @ 800 MHz ■ Non Reflective ■ Integral Driver -5.6 Volt Bias Supplies; CMOS
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AK802M2-12
AK802M2-12
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fast fet MHz
Abstract: GHz Power FET
Text: GaAs M MIC SP4T FET Non-Refledi ve Switch With Driver 20 MHz-2 GHz HQAlpha AE002M4-05 Features • Non-Reflective All Ports ■ Low Current Consumption < 20 ¡¿A ■ Two Line Control ■ 1/2 Watt 1dB Compression Point ■ Single +5V, Bias Supply - <1 ttl
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AE002M4-05
MIL-H-38534
AE002M4-05
fast fet MHz
GHz Power FET
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AF002C1-32
Abstract: No abstract text available
Text: GaAs MMIC Control FET in SOT 143 DC-2.5 GHz EBAIpfia AF002C1-32 Features m • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description The AF002C1-32 consists of a single GaAs switching
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AF002C1-32
AF002C1-32
AF002C1-39
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch Non-Reflective DC-6 GHz E£A$g|« AS006M1-01, AS006M1-10, AS004M1-08, AS004M1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption
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AS006M1-01,
AS006M1-10,
AS004M1-08,
AS004M1-11
MIL-STD-883
MA01801
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features • Broad Bandwidth ■ Low DC Power Dissipation < 20 uA ■ Low Differential Phase Between Paths ■ Meets M IL -S T D -883 Screening Requirements ■ Chip Size 30 x 39 x 8 Mils AD004T2-11
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AD004T2-00,
AD004T2-11
AD004T2-00
004T2-00
004T2-11
MA01801
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch Non-Reflective DC-6 GHz A S 0 06 M 1-0 1, A S 0 0 6 M 1-10, AS004M 1-08, AS004M 1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ High Isolation ■ 3 Nanosec Rise/Fall Time ■ Low D.C. Power Consumption
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AS004M
AS004M1-11
AS006M1-10
MIL-STD-883
AS006M1-01,
AS006M1-10,
AS004M1-08,
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AD004T2-00
Abstract: AD004T2-11 2w, GaAs FET
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ¡xA AD004T2-11 Low Differential Phase Between Paths Meets M IL-S TD -883 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description
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AD004T2-00,
AD004T2-11
MIL-STD-883
30x39x8
AD004T2-00
AD004T2-11
G0G2543
2w, GaAs FET
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-2.5 GHz EBAlph AK802M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption ~20 mW per Arm ■ High IP3 +43 dBm @ 800 MHz ■ Non Reflective ■ Integral Driver -5.6 Volt Bias Supplies; CMOS
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AK802M2-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch With Integral Driver Reflective DC-6 GHz AK006R2-01, AK006R2-10, AK004R2-11 Features Integral Driver +5V, -5V ; CMOS & TTL Compatible AK004R2-11 AK006R2-01 Low DC Power Consumption -2 0 mw Per Arm Reflective Open Meets M IL -S T D -883 Screening Requirements
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AK006R2-01,
AK006R2-10,
AK004R2-11
AK006R2-01
AK006R2-10
DSASH43
GQ02G35
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AK002M2-12
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch With Integral Driver Non-Reflective DC-2.5 GHz AK002M2-12 Features • Plastic 8 Lead SOIC ■ Low DC Power Consumption -2 0 mW Per Arm ■ Non Reflective ■ Integral Driver +5V, -5 V Bias Supplies; CMOS and TTL Compatible Description
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OCR Scan
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AK002M2-12
AK002M2-12
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch
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AD004T2-00,
AD004T2-11
004T2-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
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Untitled
Abstract: No abstract text available
Text: GaAs MIUIIC SPST FET Switch Low Loss Reflective DC-6 GHz EEQAIph AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ Reflective ■ Low Loss ■ 3 ns Rise/Fall Time
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OCR Scan
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AS006L1-01,
AS006L1-10,
AS004L1-08,
AS004L1-11
MIL-STD-883
AS004L1â
AS006L1-10
slighT002D8-31
AK006L1-01
AS004M2-11
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