w19b320
Abstract: No abstract text available
Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B320AT/B
w19b320
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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mx29lv320ttc
Abstract: MX29LV320T Q0-Q15 SA10
Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
FEB/10/2003
MAR/26/2003
APR/23/2003
JUL/04/2003
mx29lv320ttc
MX29LV320T
Q0-Q15
SA10
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Untitled
Abstract: No abstract text available
Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION
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IS71VPCF32XS04
73-ball
CF32ES04-8570BI
IS71VPCF32FS04-8570BI
IS71VPCF32AS04-8585BI
IS71VPCF32BS04-8585BI
IS71VPCF32CS04-8585BI
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DL322
Abstract: DL323 DL324
Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x4G
16-Bit)
8-Bit/256
73-Ball
FLB073--73-Ball
DL322
DL323
DL324
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SAMSUNG MCP
Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
512tRDR
69-Ball
08MAX
SAMSUNG MCP
samsung K5 MCP
BA35
BA4110
ba4410
BA651
Flash Memory SAMSUNG k5
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CA 324G
Abstract: DL322 DL323 DL324
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
CA 324G
DL322
DL323
DL324
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A29L320ATV-70F
Abstract: 48pin flash programmer circuit 48pin TSOP A29L320ATV A29L320AUV-70UF A29L320ATV-70UF A29L320AUG-70F A29L320A
Text: A29L320A Series 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue April 12, 2006
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A29L320A
48TFBGA)
A29L320ATV-70F
48pin flash programmer circuit
48pin TSOP
A29L320ATV
A29L320AUV-70UF
A29L320ATV-70UF
A29L320AUG-70F
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AMD marking CODE flash AM29DL323DB
Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Text: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.
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Am29DL322D/323D/324D
S29JL032H
Am29DL32xD
S29PL032J
AMD marking CODE flash AM29DL323DB
56-Pin
S29JL032
DL322
DL323
DL324
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MX29LV320DT
Abstract: MX29LV320DB MX29LV320DBTI-70G MX29LV320DBTI MX29LV320DTTI-70G MX29LV320D 29LV320 3F000Fh mx29lv320dbxbi-70g MX29LV320DTTI
Text: MX29LV320D T/B MX29LV320D T/B DATASHEET P/N:PM1281 REV. 1.2, OCT. 02, 2009 1 MX29LV320D T/B Contents FEATURES. 5
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MX29LV320D
PM1281
MX29LV320DT
MX29LV320DB
MX29LV320DBTI-70G
MX29LV320DBTI
MX29LV320DTTI-70G
29LV320
3F000Fh
mx29lv320dbxbi-70g
MX29LV320DTTI
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fujitsu mb90f
Abstract: upc 2851 v bnt 801 v1.1 MB90F DN-13 bnt 801 K 2232 DC-06 c914 MB90F378
Text: Corporate names revised in the documents The Fujitsu Limited reorganized its LSI business into a wholly owned subsidiary, the Fujitsu Microelectronics Limited on March 21, 2008. The corporate names “Fujitsu” and “Fujitsu Limited” described all in this document have been
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CM44-10135-1E
F2MC-16LX
16-BIT
MB90378
F2MC-16L.
F2MC-16LX
fujitsu mb90f
upc 2851 v
bnt 801 v1.1
MB90F
DN-13
bnt 801
K 2232
DC-06
c914
MB90F378
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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DS42553
Abstract: No abstract text available
Text: DS42553 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL323D Top Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42553
Am29DL323D
16-Bit)
73-Ball
DS42553
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DL322
Abstract: DL323 DL324 M41000002R
Text: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL32x8G
DL322
DL323
DL324
M41000002R
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Untitled
Abstract: No abstract text available
Text: R MX29LV320AT/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10 years data retention
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MX29LV320AT/B
32M-BIT
200nA
64K-Byte
PM1008
JAN/30/2004
MAY/28/2004
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Untitled
Abstract: No abstract text available
Text: MX29LA32xMT/B FEATURES 32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 4,194,304 x 8 / 2,097,152 x 16 switchable • Sector structure
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MX29LA32xMT/B
32M-BIT
250mA
R/22/2005
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Untitled
Abstract: No abstract text available
Text: S29JL032H 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory S29JL032H Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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S29JL032H
16-Bit)
S29JL032H
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S29GL-N
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology S29GL-N MirrorBit® Flash Family Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29GL-N
S29GL064N,
S29GL032N
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Untitled
Abstract: No abstract text available
Text: Am29LV320MT/B Data Sheet For new designs, S29GL032M supercedes Am29LV320MT/B and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV320MT/B
S29GL032M
S29GLxxxM
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Untitled
Abstract: No abstract text available
Text: Am29LV320D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV320D
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Untitled
Abstract: No abstract text available
Text: S29JL032J 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory S29JL032J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29JL032J
16-Bit)
S29JL032J
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Untitled
Abstract: No abstract text available
Text: Am29LV320D Data Sheet For new designs, S29AL032D supersedes Am29LV320D and is the factory-recommended migration path for this device. Please refer to the S29AL032D Datasheet for specifications and ordering information. The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV320D
S29AL032D
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s29GL064N90
Abstract: S29GL064N s29gl032n90 S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology S29GL-N MirrorBit® Flash Family Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29GL-N
S29GL064N,
S29GL032N
s29GL064N90
S29GL064N
s29gl032n90
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L323C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
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Am29DL32xC
16-Bit)
29DL32xC
L323C
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