1553 bus
Abstract: HM-65664 80C31M
Text: 5öbß45b QÜ0E3M3 1ÖT • MMHS January 1991 Preview MATRA H H S 29C530 HI-REL DATA SHEET MIL-STD-1553B PROTOCOL MANAGEMENT UNIT FEATURES . PIN PROGRAMMABLE FEATURES : - COMPATIBILITY WITH INTEL AND MOTOROLA MICROPROCESSORS - 8 OR 16 BIT INTERFACE - SUPPORT OF THREE MEMORY INTERFACE
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29C530
MIL-STD-1553B
29H531
MIL-STD1553B
29T532
000237b
1553 bus
HM-65664
80C31M
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fuse code Jd 0,7A
Abstract: odv marking PM5323 PM5344 PM5361 PM5371 TU12
Text: S tan d a r d PM I / I P roduct _ _ _ PRELIMINARY INFORMATION P M C -S ie rra , Inc. PM5361 TUPP SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FEA TU R ES • Configurable, multi-channel, payload processor for alignment of SONET virtual tributaries VTs or SDH tributary units (TUs). Processes an STS-3 or STM-1 byte
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PM5361
920526S7
920102S8
0GD2447
fuse code Jd 0,7A
odv marking
PM5323
PM5344
PM5371
TU12
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1I604
Abstract: No abstract text available
Text: r n r FU J I T S U LTD T\ • S3E » - 37 HT? 5 b 0 0 D S 3 7 S OTÓ « F C A J - ^ - 2 3 ' IX. M a rc h 1991 Edition 2.0 FUJITSU DATA SHEET MB82B79-17/-20 72K-BIT HIGH SPEED BI-CMOS SRAM 8192-WORD x 9-BIT BI-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79 is a 8,192 words by 9 bits static random access memory
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MB82B79-17/-20
72K-BIT
8192-WORD
MB82B79
300mil
28-LEAD
LCC-28P-M04)
C28054S-1C
1I604
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R200ch
Abstract: TR200C Westinghouse thyristor 1000A WESTINGHOUSE 8250 DDD537S SCO-105
Text: lilESTCODE 3TE D SEMICONDUCTORS ^ 7 0 ^ 5 00Q2371 □ « l i l E S B T-2.t ~ 2>{ Technical Publication WESTCODE SEMICONDUCTORS TR200C Issue 2 July 1984 High Frequency Inverter Grade Capsule Thyristor Type R200C distributed amplified gate for high d i/d t and low switching losses
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00Q2371
TR200C
R200C
200AC
R200ch
TR200C
Westinghouse thyristor 1000A
WESTINGHOUSE 8250
DDD537S
SCO-105
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Untitled
Abstract: No abstract text available
Text: mosaic 128Kx B SRAM MSM8128X-020/25/35 semiconductor, inc. Issue 4 .2 : June 1996 Description 131,072 x 8 CMOS High Speed Static RAM Features The MSM8128X is a 1Mbit monolithic SRAM organised as 128K X 8 with access times of 20ns to 35ns. This is available in 2 ceramic
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128Kx
MSM8128X-020/25/35
MSM8128X
MIL-STD-883
MSM8128SXLMB-35
MIL-STD-883
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NE24600
Abstract: NE24620 2SC2952 2SC2953 NE24615
Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :
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tj4S74m
00G237S
NE24600
NE24615
NE24620
NE24620
NE246
preve35
2SC2952
2SC2953
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Untitled
Abstract: No abstract text available
Text: S ta n d a rd P r o d u c t PM I I PMC-Sierra, Inc. / PREUMINARY INFORMATION PM5361 TUPP SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FEA TU RES • Configurable, multi-channel, payload processor for alignment of SONET virtual tributaries VTs or SDH tributary units (TUs). Processes an STS-3 or STM-1 byte
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PM5361
920526S7
920102S8
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philips 4322 191
Abstract: 4322 190 philips 4322 191 91930
Text: P h ilip ^ o m p o n e n t ^ T Q 0 ^ » 2 ]^ Ü Ü G S 3 b ^ ^ 3 1 ^ ^ ^ ^ ^ ^ ^ ^ ^ P j2 i| i2 in a r ^ p e c if ic a llo n High voltage - high value - thick film resistors FEATURES • High temperature and voltage stability • Suitable for potentiometer and/or
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T004121
ECP10
EMP10
philips 4322 191
4322 190 philips
4322 191
91930
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Untitled
Abstract: No abstract text available
Text: IIIHCRTRLY5T •■III S E M I C O N D U C T O R CAT22C10 256-Bit Nonvolatile CMOS Static RAM FEATURES ■ Single 5V Supply ■ Low CMOS Power Consumption: -Active: 40mA Max. -Standby: 30 |iA Max. ■ Fast RAM Access Times: -200ns -300ns ■ JEDEC Standard Pinouts:
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CAT22C10
256-Bit
-200ns
-300ns
-18-pin
-16-pin
CAT22C10
5153F
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EIA-RS-170
Abstract: L25TP
Text: TD S bf l7 2 D00E357 471 _ TH 7994A DRIVE CLOCK SEQUENCER FOR TH 7864A AND TH 7866A DESCRIPTION The TH 7994A d riv e c lo c k se q u e n ce r and TV s y n c h ro n iz a tio n g e n e ra to r can be used w ith th e tw o fo llo w in g fram e
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D00E357
RS170
TH7994AVW
102bfl72
000237b
EIA-RS-170
L25TP
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