tc 97101
Abstract: D472
Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out
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OCR Scan
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MT9LD272
MT18LD472
168-pin,
048-cycle
T18LCW
tc 97101
D472
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Untitled
Abstract: No abstract text available
Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by
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OCR Scan
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MT4D232
MT8D432
72-pin,
024-cycle
048-cycle
P199S.
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PDF
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B9535
Abstract: 1M16
Text: PRELIMINARY MT4LC1 M16H5 1 MEG x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • B urst order, interleave or linear, p ro gram m ed by executing W CBR cycle after initialization • Sin gle p o w er su p p ly : +3.3V ±5%
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OCR Scan
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M16H5
024-cycle
44/50-Pin
A7-A10
000xB
B9535
1M16
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Untitled
Abstract: No abstract text available
Text: ADVANCE jp il r p n M MT9LD272 B N , MT18LD472 B(N) 2, 4 MEG X 72 BURST EDO DRAM MODULES BURST EDO IDRAM MODULE 2, 4 MEG x 72 16,32 MEGABYTE, 3.3V,ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, d ual-in-line m em ory m odule (D IM M )
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OCR Scan
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MT9LD272
MT18LD472
168-pin,
048-cycle
T18LD
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WT6L
Abstract: MT81D264
Text: ADVANCE MT4LD T 164 B(N), MT8LD264 B(N), MT16LD464 B(N) 1, 2, 4 MEG x 64 RURST EDO DRAM MODULES p ilC R O N 1,2, 4 MEG x 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line m em ory module (DIMM)
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OCR Scan
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MT8LD264
MT16LD464
168-pin,
024-cycle
048-cycle
T16LD4WCBR
000xB
MT8L0264B
WT6L
MT81D264
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PDF
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T2D 53
Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Text: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by
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OCR Scan
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T4D232
T8D432
72-pin,
024-cycle
048-cycle
72-PiRON
000xB
T2D 53
T2D 70
T2D 35
"T2D"
T2D 30
T2D 66
T2D 17
T2D 32
marking T2D
T2D 31
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MT4LC4M4G6
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4M4G6 4 MEG x 4 BURST EDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, program m ed by executing WCBR cycle after initialization • Single pow er supply: +3.3V ±5% • All inputs a n d o u tp u ts are LVTTL com patible w ith 5V
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OCR Scan
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048-cycle
24/26-Pin
MT4LC4M4G6
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M • ir S D N MT4 LD T 164 B(N ), MT8LD264 B(N ), MT16LD464 B(N ) 1 ,2 ,4 M EG X 64 B U R S T EDO DRAM M O D U LES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (D IM M )
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OCR Scan
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MT8LD264
MT16LD464
168-Pin
168-pin,
024-cycle
column-00
0D1310Ã
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PDF
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MT4LC4M4G6
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4IW4GS 4 M EG x4 BURSTEDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V
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OCR Scan
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048-cycle
26-Pin
000xBwhere
MT4LC4M4G6
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PDF
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m995
Abstract: 8F4DJ-52
Text: PRELIMINARY MT4LC2M8F4 2 MEG x 8 BURST EDO DRAM p ilC R C D N BURST EDO DRAM 2 MEG x 8 FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, program med by executing W CBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL com patible with 5V
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OCR Scan
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048-cycle
28-Pin
000xB
m995
8F4DJ-52
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PDF
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tc 97101
Abstract: No abstract text available
Text: ADVANCE MICRON I rtCHNCLOG * INC M714LD T 164 B(N), MT8LD264 B(N), MT16LD464 B(N) 1 , 2 , 4 MEG X 64 BURST EDO DRAM MODULES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES • 168-pin, dual-in-line m em ory m od u e (DIM M )
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OCR Scan
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M714LD
MT8LD264
MT16LD464
168-pin,
024-cycle
048-cycle
168-Pin
1125I
tc 97101
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T41C
Abstract: T41C-4M
Text: PRELIMINARY H/rT4LC4M4Gtff S M BK jc* BURST EDO DRAWT BURST EDO DRAM FEATURES • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V
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OCR Scan
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048-cycle
26-Pin
000xB
A8-A10
000x8
T41C
T41C-4M
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PDF
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