Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 HT$ LOC RESERVED. REVISIONS D I ST 22 AA LTR DE S C R I P T I O N DWN DATE E C OS I 1- 0 2 0 1 - 04 LAM 0 9 MA Y 2 0 0 5 APVD SF 2 1.24 59.07

Contextual Info: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its

Contextual Info: DRW NO. 1 3 TABLE 1 PART NUMBER DESCRIPTION K L 319-52XX-020 20 3I9-52XX-040 POSITION 40 3I9-52XX-060 POSITION 60 319-52XX-080 80 3 1 9 - 5 2 X X - 10 0 100 3I9-52XX-I20 120 9 19 POSITION 29 POSITION 9.9 20.9 31.9 P R 17.5 14.2 28.5 25.2 39.5 36.2 39 42.9

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Contextual Info: Panasonic CCD Area Image Sensor MN3726MFE, MN3726MAE 6mm 1/3 inch 512H High-Resposivity CCD Area Image Sensors •O verview I Pin Assignments T y p e N o. M N 3726M FE M N 3726M A E S ize 6 m m (1/3 inch) S y stem Area | C o lo r o r B /W PAL C o lo r C C IR

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