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AMD 100-100000147MPK AMD RYZEN 5 4600G WITH WRAITH
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00147M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
E1006 Abstract: buz67 TO-238AA QS 424 Text: ôôD D • 88D Ö 23 s b 0 s 14714 00147m D 2 «sieg 'T '- 7 ? ~ J 3 BUZ67 SIEMENS AKTIENGESELLSCHAF_ N-Channel Main ratings a 400 V Draln-source voltage I^DS = 9,6 A Continuous drain current h Draln-source on-reslstance ^DS on = 0,4 Si Description	OCR Scan	00147m BUZ67 C67078-A1610-A2 fl23SbG5 E1006 buz67 TO-238AA QS 424	PDF
buz349 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349	PDF
Untitled Abstract: No abstract text available Text: CY7C123 rS CYPRESS 256 x 4 Static RAM Functional D escription Features • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)	OCR Scan	300-mil CY7C123 38-00060-F DD147NÔ	PDF
h a 431 transistor Abstract: BUZ349 transistor buv y 431 transistor Text: ObE D N AMER P H I L I P S / D I S C R E T E PowerMOS transistor 1^ 53^31 0014745 t BUZ3491 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	b53i3i BUZ349 T0218AA; T-39-13 h a 431 transistor BUZ349 transistor buv y 431 transistor	PDF
DS1642 Abstract: MK48T02 Text: 0S 1642 DALLAS .Nonvolatile TimekeepingDS1642 RAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Form, fit, and function compatible with the M K48T02 Timekeeping RAM A7C 1 24 □ Vcc A6 Q 2 23 □ A8 A5 Q 3 22 □ A9 A4 Q 4 21 □ WE A3 C 5 20 □ ÔË	OCR Scan	DS1642 MK48T02 DS1642 24-PIN 24-PIN	PDF