TA7404AP
Abstract: TA7704
Text: TOSHIBA-. ELE CT RON IC 02 Ï>eJ ACH TEM? 0017317 7 | ~ 02E 17317 TA7404AP TA7704AP D ~ T - y T~Z! • FM IF SYSTEM QUADRATURE DETECTION Unit in mm TA7404AP and TA7704AP are IC developed for car tuner use. TA7404AP C1.0 &2±aa As they confine free muting function and station
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TA7404AP
TA7704AP
TA7404AP
TA7704AP
YT-20615
12UEW
TN-30751
TN-30751)
TA7704
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LH28F008SC
Abstract: alfow
Text: PRODUCT PREVIEW LH28F008SC 8-MBIT 1 MB x 8 SmartVoltage FlashFileTM MEMORY • SmartVoltage Technology — 3.3V or 5V Vcc — 3.3V, 5V, or 12V VPP ■ High-Density Symmetrically-Bfocked ■ High-Performance — 85 ns Read Access Time ■ Extended Cycling Capability
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LH28F008SC
40-Lead
44-Lead
64-Kbyte
120ns
150ns
alfow
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MSM5116400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM5116400 is a n ew generation d yn am ic organized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 16400 is O K I's C M O S silico n gate process technology.
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MSM5116400
304-Word
MSM5116400
cycles/64ms
b72M2M0
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A11E
Abstract: A1E transistor
Text: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.
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MSM5116100_
216-Word
MSM5116100
cycles/64ms
A0-A11
MSM5116100
A11E
A1E transistor
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