Untitled
Abstract: No abstract text available
Text: / T u r m LTC140Q TECHNOLOGY C om plete SO-8,12-Bit 400ksps ADC w ith Shutdown F€OTUR€S DCSCMCTlOn • Complete 12-Bit ADC in SO-8 ■ Single Supply 5V or ±5V Operation ■ Sample Rate: 400ksps ■ Power Dissipation: 75mW Typ ■ 72dB S/(N + D) and -80dB THD at Nyquist
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LTC140Q
12-Bit
400ksps
12-Bit
400ksps
-80dB
400ksps,
75mWfrom
LTC1285/LTC1288
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CKE50
Abstract: No abstract text available
Text: CMOS LSI SA0YO LC382161 AT -10/12/15 2 MEG 65536 Words X 16 Bits X 2 Banks Synchronous DRAM Target Specifications Overview The LC382161AT product is a 3.3V single-voltage power supply Synchronous DRAM (SDRAM) with a 65536-word x 16-bit x 2-bank organization. This SDRAM features a large capacity, high speed, and low
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LC382161
LC382161AT
65536-word
16-bit
50-pin
7cH707b
001772b
DD1772?
CKE50
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MI105
Abstract: No abstract text available
Text: b 2 4 cì f l g cl DD1 7 7 2 S 4 5 T • ANTENNA SWITCH MI 105 PIN DIODE DESCRIPTION OUTLINE DRAWING The MI105 PIN diode is employing a high reliability glass construction, designed for small signal switching. FEATURES • • • • • Dimension: mm
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MI105
100MHz)
001772b
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Untitled
Abstract: No abstract text available
Text: •ONY I C X P811 2 0 /8 1 1 2 4 CMOS 8-bit Single Chip Microcomputer Description The C XP81120/81124 is a CMOS 8-bit micro computer which consists of A/D converter, serial interface, timer/counter, time base timer, PWM output, as well as basic configurations like 8-bit
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XP81120/81124
16-bit
250ns
16MHz
333ns
12MHz
QFP-64P-L01
QFP064-P-1420
42/COPPER
CXP81120/81124
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.)
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D0177B0
KM6164002
KM6164002J-20:
240mA
KM6164002J-25:
220mA
KM6164002J-35:
200mA
KM6164002J:
KM6164002
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18-PIN
Abstract: MSM51C256A 1772B
Text: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.
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MSM51C256A
144-Word
MSM51C256A
b724240
24g40
D01773E
18-PIN
1772B
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headland 386
Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Text: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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LCB300K
DB04-000049-00,
D-102
I40lg
headland 386
transistor zo 607 MA 7S
b2211
full subtractor using ic 74138
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ATF-36077-STR
Abstract: 5965-8726E
Text: Thal H E W L E T T mLEm P A C K A R D 2 -1 8 GHz Ultra Low N oise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT T echnology • Ultra-Low N o ise Figure: Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor
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ATF-36077
ATF-36077
5962-0193E
5965-8726E
44475A4
001772b
ATF-36077-STR
5965-8726E
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