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    T3B diode

    Abstract: No abstract text available
    Text: «S IIG K T3B P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		DD1237D IRFR9120/9121 IRFU91 IRFR9120/U9120 IRFR9121/U9121 001E374 IRFU9120/9121 T3B diode PDF