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    MD108

    Abstract: MD-108 MD10S N 5192 RC32DPM txal CRC-16 CRC-32 V150LA10A TI rf transmitter receiver loop antenna
    Text: RC32DPM RC32DPM Mobitex Wireless Modem Data Pump with V.32 bis Wireline Support Rockwell INTRODUCTION FEATURES The Rockwell RC32DPM modem data pump MDP provides the baseband signal processing needed to support the Mobitex wireless packet data system. The RC32DPM combines packetswitched data communication functionality with V.32 bis data


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    RC32DPM RC32DPM leaRC32DPM PD68J/GPOO-D164 68-Pin MD108 11D73 MD108 MD-108 MD10S N 5192 txal CRC-16 CRC-32 V150LA10A TI rf transmitter receiver loop antenna PDF

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip PIC16C6X 8-Bit CMOS Microcontrollers Devices included in this data sheet: PIC16C61 PIC16C64A PIC16C62 PIC16CR64 PIC16C62A PIC16C65 PIC16CR62 PIC16C65A PIC16C63 PIC16CR65 PIC16CR63 PIC16C66 PIC16C64 PIC16C67 • Low-power, high-speed CMOS EPROM/ROM


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    PIC16C6X PIC16C61 PIC16C64A PIC16C62 PIC16CR64 PIC16C62A PIC16C65 PIC16CR62 PIC16C65A PIC16C63 PDF

    IRFSZ24

    Abstract: 250M IRFSZ20
    Text: N-CHANNEL POWER MOSFETS IRFSZ24/20 FEATURES • Lower R d s o n | • Improved inductive rugge dn ess • Fast sw itching tim es • R u g g e d polysilicon gate cell structure • Low er input capacitance • Extended safe operating area • Im proved high temperature reliability


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    IRFSZ24/20 IRFSZ24 IRFSZ20 O-220F 250M PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power


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    MSM51 V17160 576-Word 16-Bit TheMSM51V17160 MSM51V17160 42-pin PDF

    BUK427-500B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 25E D bbSBTEl 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B T - 39-11 GENERAL DESCRIPTION SYMBOL ccn > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


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    BUK427-500A BUK427-500B BUK427 -500A -500B BUK427-500B PDF

    qml-38535

    Abstract: HCS245
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A PPROVED REV SHEET REV SHEET 15 REV STATUS u r oncc i o REV SHEET PMIC N/A STANDARD M ICRO CIRC UIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 1 2 3 4 5


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    MIL-HDBK-103 T0D47QÃ 00E0EÃ T0047DÃ qml-38535 HCS245 PDF