Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    00224B4 Search Results

    00224B4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM5964-30LA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = -34.5 dBm, - Single carrier level • High power - PidB = 45 dBm at 5.9 GHz to 6.4 GHz • High gain - G1dB = 9.0 dB at 5.9 GHz to 6.4 GHz • Broadband internally matched


    OCR Scan     		PDF TIM5964-30LA 2-16G1B) 00224b4 00224bS

    BYR79

    Abstract: 0317 M1245 tag 265 600 T-03-17
    Text: s I I ^53131 25E D N AMER PHILIPS/DISCRETE 00224 33 7 • BYR79 SERIES 7 ^ 0 3 - i y ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery


    OCR Scan     		PDF BYR79 BYR79- bb53t31 T-03-17 m3085 M3086 M1245 0317 M1245 tag 265 600 T-03-17