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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA TIM5964-30LA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = -34.5 dBm, - Single carrier level • High power - PidB = 45 dBm at 5.9 GHz to 6.4 GHz • High gain - G1dB = 9.0 dB at 5.9 GHz to 6.4 GHz • Broadband internally matched	OCR Scan	PDF	TIM5964-30LA 2-16G1B) 00224b4 00224bS

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Untitled

Abstract: No abstract text available
Text: TOSHIBA TIM5964-30LA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = -34.5 dBm, - Single carrier level • High power - PidB = 45 dBm at 5.9 GHz to 6.4 GHz • High gain - G1dB = 9.0 dB at 5.9 GHz to 6.4 GHz • Broadband internally matched

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TIM5964-30LA 2-16G1B) 00224b4 00224bS