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    ti77

    Abstract: BV EI 301
    Text: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase


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    KM29V16000ATS/RS 250us KM29V16000A Figure15 0D242fl2 ti77 BV EI 301 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY i i i S lllllììl S ^ 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB8118165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118165B is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory


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    MB8118165B-50/-60 MB8118165B 16-bit MB8118165B C42001S-2C-1 374175b 0D242fl2 PDF

    BAS19

    Abstract: jpP marking code jsp sot-23 marking BAS20 BAS21 BAS19 BAS19 JPp bas21 lp
    Text: • Libsa'm N AMER 0024270 7bb ■ PHILIPS/DISCRETE BAS19 BAS20 BAS21 APX b7E ]> y v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES andCgenn e ritapurposes."SPeed d i° d9S ° m ic ro m in ia tu re Plastic envel°P«- T he y are intended fo r sw itch in g Q U IC K R E F E R E N C E D A T A


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    BAS19 BAS21 OT-23. BAS20 BAS19 jpP marking code jsp sot-23 marking BAS21 BAS19 BAS19 JPp bas21 lp PDF

    Delta dps 240 fp

    Abstract: rockwell l39 DELTA DPS 1200 rc144dpg RC144ACG 386 laptop schematic MD105 9 UN07
    Text: RC144ACG Rockwell RC144ACG 3.3V, Low Power, Integrated High Speed Data/Fax/Voice Modem Device Set with Cellular Direct Connect Support INTRODUCTION FEATURES The Rockwell RC144ACG integrated data/fax/voice modem device set family supports high speed data and


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    RC144ACG RC144ACG J22198 20017Mazzodi 00E4S1S Delta dps 240 fp rockwell l39 DELTA DPS 1200 rc144dpg 386 laptop schematic MD105 9 UN07 PDF

    MSM64172

    Abstract: VQH207 P13CO
    Text: O K I Semiconductor MSM64172_ Built-in Serial Port and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64172 is a low-power 4-bit m icrocontroller that incorporates O K I's C P U core nX-4/20. The MSM64172 has a m inim um instruction execution tim e of 5 is (@ 600 kH z and 3.0 V . The


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    MSM64172 MSM64172 nX-4/20. 2016-byte 128-nibble b724240 b7E454D QE42flb b7E4240 VQH207 P13CO PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS19 BAS20 BAS21 tbS3^31 002M270 7bb • APX N A HER PHILIPS/DISCRETE b7E ]> y v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon epitaxial high-speed diodes in a microminiature plastic envelope. They are intended for switching and general purposes. QUICK REFERENCE DATA


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    BAS19 BAS20 BAS21 002M270 bbS3R31 002427b PDF

    Untitled

    Abstract: No abstract text available
    Text: SÊ G E C PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4079-1.4 MA12003 22 BIT PHASE ACCUMULATOR / SINE ROM FEATURES The MA12003 is a 22 bit phase accumulator /sine read only memory ROM ASIC, it is a 21 bit parallel TTL input device with


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    DS4079-1 MA12003 MA12003 500MHz 500MHz 37bfl 002427b PDF