6-0025BS
Abstract: No abstract text available
Text: DSS 6-0025BS IFAV = 6 A VRRM = 25 V V F = 0.3 V Power Schottky Rectifier VRSM VRRM V V 25 25 Type marking A C TO-252 AA on product DSS 6-0025BS A 6Y025BS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 140°C; rectangular, d = 0.5
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6-0025BS
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6Y025BS
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50-0025B
Abstract: No abstract text available
Text: DSSK 50-0025B IFAV = 2x25 A VRRM = 25 V VF = 0.42 V Power Schottky Rectifier with common cathode Preliminary Data TO-247 AD VRSM VRRM V V 25 25 Type A C A DSSK 50-0025B A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions IFRMS IFAV
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50-0025B
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50-0025B
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Abstract: No abstract text available
Text: DSSK 50-0025B IFAV = 2x25 A VRRM = 25 V VF = 0.42 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 25 25 TO-247 AD Type A DSSK 50-0025B C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings
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50-0025B
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Abstract: No abstract text available
Text: DSSK 80-0025B DSSK 80-003B IFAV = 2x40 A VRRM = 25 / 30 V VF = 0.39 V Power Schottky Rectifier with common cathode VRSM VRRM V V 25 30 25 30 TO-247 AD Type A DSSK 80-0025B DSSK 80-003B C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions
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80-0025B
80-003B
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Text: DSSK 38-0025B DSSK 38-0025BS IFAV = 2x 20 A VRRM = 25 V V F = 0.40 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 25 25 25 25 A Type C A DSSK 38-0025B DSSK 38-0025BS TO-263 AB .S-Type TO-220 AC C (TAB) A A A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode
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38-0025B
38-0025BS
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25-0025B
Abstract: 3525a
Text: DSS 25-0025B IFAV = 25 A VRRM = 25 V VF = 0.44 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 25 25 TO-220 AC Type A C C A DSS 25-0025B C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 125°C; rectangular, d = 0.5
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25-0025B
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3525a
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Abstract: No abstract text available
Text: DSSK 48-0025B IFAV = 2x25 A VRRM = 25 V VF = 0.35 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 25 25 TO-220 AB Type A DSSK 48-0025B C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings
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48-0025B
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Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance
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CPM2-1200-0025B
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Text: DSSK18-0025BS preliminary V RRM = 25 V I FAV = 2x 10 A V F = 0.37 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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DSB30C30PB
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Text: DSS25-0025B V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 25 A 0.45 V Part number DSS25-0025B 3 1 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power supplies SMPS
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0025B
Abstract: DSS25-0025B
Text: DSS25-0025B Schottky Diode V RRM = I FAV = VF = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 25 A 0.45 V Part number DSS25-0025B 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses
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DSS25-0025B
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Text: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive
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Abstract: No abstract text available
Text: DSSK 80-0025B DSSK 80-003B IFAV = 2x40 A VRRM = 25 / 30 V VF = 0.39 V Power Schottky Rectifier with common cathode VRSM VRRM V V 25 30 25 30 TO-247 AD Type A DSSK 80-0025B DSSK 80-003B C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions
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80-0025B
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Abstract: No abstract text available
Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
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20110915a
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Abstract: No abstract text available
Text: DSSK 80-0025B IFAV = 2x40 A VRRM = 25 V VF = 0.39 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 25 25 TO-247 AD Type A DSSK 80-0025B C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings
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80-0025B
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Abstract: No abstract text available
Text: DSSK 50-0025B IFAV = 2x25 A VRRM = 25 V VF = 0.42 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 25 25 TO-247 AD Type A DSSK 50-0025B C A A C A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings
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Text: • bb53^31 0025b31 S3? H A P X N AMER PHILIPS/DISCRETE BST15 BST16 b7E V J V. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in m iniature plastic envelopes intended fo r use in am plifier and switching applications Complementary types are BST39/40.
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0025b31
BST15
BST16
BST39/40.
bbS3T31
0025b33
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Abstract: No abstract text available
Text: □ IXYS DSSK 80-0025B Power Schottky Rectifier U av with common cathode V rrm VF 2x40 A - 25 V = 0.39 V - P re lim in a ry D a ta V rsM V rrm V V 25 25 TO-247 AD Type A DSSK 80-0025B C A A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings
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80-0025B
O-247
QQQ5S75
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d413
Abstract: D-413 D414 D-414 0025B
Text: DSSK 50-0025B Power Schottky Rectifier I fa v with common cathode ^ rrm V F — 2x25 A 25 V 0.42 V Preliminary Data TO-247 AD VBRM V RSM V TyPe V -l A 25 25 C - - i J A DSSK 50-0025B C TAB A = Anode, C = Cathode , TAB = Cathode Symbol ^FRMS Test Conditions
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50-0025B
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0025B
D4-14
d413
D-413
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D-414
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BST60
Abstract: BST50
Text: • BST50 BST51 BST52 bbSBTBl 0025b37 T55 H A P X N AMER PHILIPS/DISCRETE b7E D y v N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. p rin t hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 envelope.
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BST50
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Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed
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bL53T31
0025b57
BST86
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BST86
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Untitled
Abstract: No abstract text available
Text: n ix Y S DSSK 50-002Ï Power Schottky Rectifier U av with common cathode V rrm 2x25 A 25 V 0.42 V VF Preliminary Data TO-247 AD V RSM V rrm V V TyPe ‘ |.WT i A A 25 25 C W |J A A DSSK 50-0025B C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions
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50-0025B
1998IXYS
DGG4711
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tc-2b 94v-0
Abstract: No abstract text available
Text: □IXYS DSS 25-0025B Power Schottky Rectifier 25 A 25 V 0.44 V •FAV V rrm VF Prelim inary Data V RSM V V V 25 25 TO-220 AC U. \ Type rrm C TAB DSS 25-0025B A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings ^FRMS ^FAVM Tc = 125°C; rectangular, d = 0.5
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25-0025B
O-220
tc-2b 94v-0
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HXYS
Abstract: No abstract text available
Text: HXYS DSSK 48-0025B Advanced Technical Information Power Schottky Rectifier •FAV with common cathode ^R R M VF 2x25 A 25 V 0.44 V TO-220 AB VRSM VRRM V V 25 25 Type A C A C TAB DSSK 48-0025B A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions
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48-0025B
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