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    transistor BD 263

    Abstract: No abstract text available
    Text: BFR29 _ / V . N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in


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    PDF BFR29 003Sf bb53331 bb53T31 0035T03 transistor BD 263