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    003ST Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    BQ2003STR Texas Instruments Switch-mode NiCd/NiMH battery charger with negative dV and dT/dt termination 16-SOIC 0 to 70 Visit Texas Instruments Buy
    SF Impression Pixel

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    Central Semiconductor Corp CMPD3003S-TR-PBFREE

    DIODE ARRAY GP 180V 200MA SOT23
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    DigiKey CMPD3003S-TR-PBFREE Cut Tape 45,906 1
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    CMPD3003S-TR-PBFREE Digi-Reel 45,906 1
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    CMPD3003S-TR-PBFREE Reel 42,000 3,000
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    Samtec Inc QST-120-03-S-T

    2.00 MM POWER PLANE SOCKET STRIP
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    DigiKey QST-120-03-S-T Tube 1
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    Master Electronics QST-120-03-S-T
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    Sager QST-120-03-S-T 1
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    Samtec Inc SQT-130-03-S-T

    CONN RCPT 90POS 0.079 GOLD PCB
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    DigiKey SQT-130-03-S-T Tube 1
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    Avnet Americas SQT-130-03-S-T Tube 3 Weeks, 3 Days 1
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    CoreLed Systems Inc 12003-STAR-E17

    LED MOD WARM WHT STARBOARD
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    DigiKey 12003-STAR-E17 Bag 1
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    Samtec Inc SSQ-120-03-S-T

    CONN RCPT 60POS 0.1 GOLD PCB
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    DigiKey SSQ-120-03-S-T Bulk 1
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    Newark SSQ-120-03-S-T Bulk 1
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    003ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    63N003

    Abstract: CS JST E172855 250-SERIES PA46 TSSF002 JST 14 UL94V-2 SOM-51
    Text: This Drawing is the property of J.S.T. U.K. Ltd. It must not be copied or used for manufacturing without written permission from J.S.T.(U.K.) Ltd. UNCONTROLLED CUSTOMER ISSUE CS-003STY 01016 003STY 63N003 PA46 PA66 UL94V-2 UL94V-2 Natural Natural JST Part Number


    Original
    PDF CS-63N003STY 63N003STY 63N003 UL94V-2 E172855 003STY SOM-51( 63N003 CS JST E172855 250-SERIES PA46 TSSF002 JST 14 UL94V-2 SOM-51

    Untitled

    Abstract: No abstract text available
    Text: BF964S _ J \_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable for use in professional


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    PDF BF964S 003ST30

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY COM’L: -7/10/12/15/20 Z I Advanced Micro Devices M A C H 1 3 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 7.5 ns tpo


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    PDF PAL26V16â MACH130, MACH230, MACH435 MACH130 MACH131 PAL22V10 84-Pin 055755L. MACH131-7/10/12/15/20

    Untitled

    Abstract: No abstract text available
    Text: FINAL COM’L: -15/20 IND:-18/24 S M A C H 1 2 0 - 1 5 / 2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 56 Inputs ■ 48 Macrocells ■ 48 Outputs ■ 15 ns tpoCommercial 18 ns tpo Industrial


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    PDF MACH220 MACH120 PAL22V10 MACH120-15/20 003StiDfl

    Untitled

    Abstract: No abstract text available
    Text: FINAL COM’L: -12 a MACH210AQ-12 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 32 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 2 clock choices ■ 12 ns tPD Commercial ■ 4 “PAL22V16” blocks with buried macrocells


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    PDF MACH210AQ-12 PAL22V16â MACH110, MACH215 MACH210AQ-12 PAL22V10 MACH210 MACH210: 44-Pin 28-Pin)

    Untitled

    Abstract: No abstract text available
    Text: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.


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    PDF BF980A CA10S 003ST43 bti53t131 0035T44

    Siemens PEB 2040

    Abstract: Siemens PEB 2045 TS127 08 PLCC-40 CDIP40 D55A PEB2045 P 30B4 PL-CC-44 tsco4
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • S IE M E N S 623SbDS 0035^31 5 ■ ISIEG -T -7 5 -//' Memory Time Switch CMOS MTSC Preliminary Data PEB 2045 PEF 2045 CMOS 1C Type Ordering Code Package PEB 2045 P PEB 2045 C PEB 2045 N PEF 2045 P PEF 2045 C PEF 2046 N


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    PDF 623SbDS 75-/h2t Q67100-H8322 P-DIP-40 Q67100-H8323 C-DIP-40 Q67100-H8602 PL-CC-44 Q67100-H6056 Siemens PEB 2040 Siemens PEB 2045 TS127 08 PLCC-40 CDIP40 D55A PEB2045 P 30B4 PL-CC-44 tsco4

    BF981

    Abstract: bf981 TRANSISTOR gs gl 317 tv tuner SOT103 transistor Bf981
    Text: BF981 J v _ _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fietd-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional communi­


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    PDF BF981 BF981 bf981 TRANSISTOR gs gl 317 tv tuner SOT103 transistor Bf981

    M37702E4AFS

    Abstract: M37702E4 AL P3d m37703e4axxxsp M37702M2AXXXFP M37702M2BXXXFP m37702e2 E7702
    Text: ELECTRICAL CHARACTERISTICS 15.1 Absolute maximum ratings_ This chapter describes electrical characteristics of the M 37702M2BXXXFP and M37702M2AXXXFP. For the low voltage version, refer to section “18.4 E le c tric a l c h a ra c te ris tic s .”


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    PDF M37702M2BXXXFP M37702M2AXXXFP. M37702M2BXXXFP A16/D0-A23/D7 54ia2fl M37702E4AFS M37702E4 AL P3d m37703e4axxxsp M37702M2AXXXFP m37702e2 E7702

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


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    PDF BSD12 7Z90791

    Untitled

    Abstract: No abstract text available
    Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


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    PDF BF966S bbS3331 003ST36

    Untitled

    Abstract: No abstract text available
    Text: FINAL COM’L: -10/12/15/20, Q-15/20 IND: -12/14/18/24 M A C H 2 1 0 A -1 0 M A C H 2 1 0 -1 2 /1 5 /2 0 M A C H 2 1 O A Q -1 5 /2 0 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells


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    PDF Q-15/20 PAL22V16â MACH110, MACH215 ACH210 MACH210-10/12/15/20, 0257521a 0035fcj7ti

    bfr84

    Abstract: 71672 MSI MS-5 511 MOSFET
    Text: BFR84 J '-SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fieid-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m . tuners,


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    PDF BFR84 bbS3131 7Z67774. bfr84 71672 MSI MS-5 511 MOSFET

    BSV81

    Abstract: No abstract text available
    Text: BSV81 J V. N-CHANNEL IG-MOS-FET Symmetrical depletion type field-effect transistor in a TO-72 metal envelope with the substrate connec­ ted to the case. It is intended fo r chopper and other special switching applications, e.g. timing circuits, multiplex circuits, etc. The features are a very low drain-source 'on' resistance, a very high drain-source


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    PDF BSV81 003ST30 b53T31 BSV81

    MACH465

    Abstract: MACH465-12 MACH465-15 ge-57
    Text: FINAL M A C H 4 6 COM’L: -12/15/20 5 - 1 2 / 1 5 / 2 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins in PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, in-circuit programmable


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    PDF 12nstPD PAL34V16" MACH465-12/15/20 MACH465 MACH465-12 MACH465-15 ge-57

    transistor mosfet bf964s

    Abstract: BF964SA BF964S 10103F
    Text: BF964S J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r V H F applications in television tuners. The device is also suitable fo r use in professional


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    PDF BF964S transistor mosfet bf964s BF964SA BF964S 10103F

    SN139

    Abstract: 6N1381 6N139 6N138 PHILIP MCB390 MSA8
    Text: Product specification Philip» Semiconductor» Low input current, high-gain optocouplers 6N138/6N139 FEATURES • High current transfer ratio • Short propagation delay times • TTL compatible • Low saturation voltage/low input current • High transient immunity


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    PDF 6N138/6N139 6N138 6N139 OT97F E90700 6N138. T-nb-25Â 0035bfc SN139 6N1381 PHILIP MCB390 MSA8