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    007N06N Price and Stock

    Infineon Technologies AG IPT007N06NATMA1

    MOSFET N-CH 60V 300A 8HSOF
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    DigiKey IPT007N06NATMA1 Digi-Reel 10,731 1
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    EBV Elektronik IPT007N06NATMA1 322,000 19 Weeks 2,000
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    Infineon Technologies AG IPTG007N06NM5ATMA1

    MOSFET N-CH 60V 53A/454A HSOG-8
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    DigiKey IPTG007N06NM5ATMA1 Digi-Reel 2,636 1
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    IPTG007N06NM5ATMA1 Reel 1,800 1,800
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    Avnet Americas IPTG007N06NM5ATMA1 Reel 18 Weeks 1,800
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    Mouser Electronics IPTG007N06NM5ATMA1 5,644
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    Infineon Technologies AG IPTC007N06NM5ATMA1

    TRENCH 40<-<100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPTC007N06NM5ATMA1 Digi-Reel 1,279 1
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    IPTC007N06NM5ATMA1 Reel 1,800
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    Infineon Technologies AG ISC007N06NM6ATMA1

    TRENCH 40<-<100V
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    DigiKey ISC007N06NM6ATMA1 Reel 5,000
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    EBV Elektronik ISC007N06NM6ATMA1 13 Weeks 5,000
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    Infineon Technologies AG IPT007N06N

    MOSFETs TRENCH 40<-<100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPT007N06N 5,548
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    ComSIT USA IPT007N06N 1,529
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    Win Source Electronics IPT007N06N 28,900
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    Find more 007N06N price and stock on Findchips.com

    007N06N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 007N06N 1Description HSOF Features Tab •100%avalanchetested


    Original     		IPT007N06N IEC61249-2-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original     		IPT007N06N IEC61249-2-21 007N06N PDF

    IPT007N06N

    Abstract: f150at IPT00 d150 fet 007N06N
    Text: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original     		IPT007N06N IEC61249-2-21 007N06N IPT007N06N f150at IPT00 d150 fet 007N06N PDF

    007N06N

    Abstract: No abstract text available
    Text: 007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max


    Original     		IPT007N06N IEC61249-2-21 007N06N 007N06N PDF