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    MDT400M01001VT Amphenol Communications Solutions PCIe M.2 Connectors, Storage and Server Connector, P=0.5mm, Vertical,Key M,30u\\ Au Plating Visit Amphenol Communications Solutions
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    Vishay Dale

    Vishay Dale IFSC3232DBER100M01

    FIXED IND 10UH 3.1A 34 MOHM SMD
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    DigiKey IFSC3232DBER100M01 Digi-Reel 7,186 1
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    IFSC3232DBER100M01 Cut Tape 7,186 1
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    IFSC3232DBER100M01 Reel 6,000 1,200
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    Vishay Dale IFSC1111ABER100M01

    FIXED IND 10UH 1A 336 MOHM SMD
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    DigiKey IFSC1111ABER100M01 Digi-Reel 6,973 1
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    IFSC1111ABER100M01 Cut Tape 6,973 1
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    IFSC1111ABER100M01 Reel 4,000 2,000
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    Vyrian IFSC1111ABER100M01 2,106
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    Vishay Dale IFSC0806AZER100M01

    FIXED IND 10UH 450MA 1.33OHM SMD
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    DigiKey IFSC0806AZER100M01 Reel 6,000 3,000
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    Vishay Dale IHLP4040DZER100M01

    FIXED IND 10UH 6.8A 36.5MOHM SMD
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    IBS Electronics IHLP4040DZER100M01 500 500
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    Vishay Dale IFSC2020BZER100M01

    FIXED IND 10UH 1.2A 127 MOHM SMD
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    DigiKey IFSC2020BZER100M01 Digi-Reel 2,094 1
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    IFSC2020BZER100M01 Cut Tape 2,094 1
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    00M01 Datasheets Context Search

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    NDT452P

    Abstract: No abstract text available
    Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.


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    NDT452P 125-c b501130 NDT452P PDF

    6d40 engine diagram

    Abstract: 27mhz remote control receiver ic rx 2b circuit FO HD64404BT sony g14 q2 colour tv receiver H669 Renesas C2L4 Delta Electronics dps 750 vba EQ7 SONY TVR 4621 sony g14 colour tv receiver
    Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,


    Original
    HD64404 6d40 engine diagram 27mhz remote control receiver ic rx 2b circuit FO HD64404BT sony g14 q2 colour tv receiver H669 Renesas C2L4 Delta Electronics dps 750 vba EQ7 SONY TVR 4621 sony g14 colour tv receiver PDF

    Cree R2 LED

    Abstract: No abstract text available
    Text: Cree XLamp® XR-E and XR-C LED Binning and Labeling Introduction This document describes the product nomenclature required to select and order Cree’s XLamp XR-E and XR-C LEDs. XLamp XR-E and XR-C LEDs are tested and sorted into bins which are then combined into orderable kits identified by an order


    Original
    an0P03 CLD-AP12 Cree R2 LED PDF

    BM11117A

    Abstract: No abstract text available
    Text: TO SH IB A TMP87PM29 CMOS 8-Bit Microcontroller TMP87PM29U, TMP87PM29N The TMP87PM29 is an One-Time PROM microcontroller with low-power 256K bits 32 Kbytes electrically programmable read only memory for TMP87CH29/CK29/CM29 system evaluation. The TMP87PM29 is pincompatible with TMP87CH29/CK29/CM29. The operations possible with the TMP87CH29/CK29/CM29 can be


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    TMP87PM29 TMP87PM29U, TMP87PM29N TMP87PM29 TMP87CH29/CK29/CM29 TMP87CH29/CK29/CM29. TC57256AD BM11117A PDF

    BM11117A

    Abstract: TC57256AD TMP87PM29N TMP87PM29U toshiba 0,el
    Text: TO SH IB A TMP87PM29 C M O S 8-Bit M icro co n tro lle r TMP87PM29U, TMP87PM29N T h e TM P 87P M 29 is an O n e -T im e PRO M m icro co n tro lle r w ith lo w -p o w e r 2 5 6K bits 32 Kbytes electrically p ro g ra m m a b le read o n ly m e m o ry fo r TM P 87C H 29/CK 29/CM 29 system e v a lu a tio n .


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    TMP87PM29 TMP87PM29U, TMP87PM29N TMP87CH29/CK29/CM29 TMP87CH29/CK29/CM29. TC57256AD BM11117A TMP87PM29U toshiba 0,el PDF

    cree xre

    Abstract: lm 3751 Cree Q5 LED CREE XR-C N4 CREE XR-E Q4 cree xr-e
    Text: Cree XLamp® XR-E and XR-C LED Binning and Labeling Introduction This document describes the product nomenclature required to select and order Cree’s XLamp XR-E and XR-C LEDs. XLamp XR-E and XR-C LEDs are tested and sorted into bins which are then combined into orderable kits identified by an order


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    CLD-AP12 cree xre lm 3751 Cree Q5 LED CREE XR-C N4 CREE XR-E Q4 cree xr-e PDF

    tlhr8400

    Abstract: TLHg 8400 TLHY
    Text: 17E D TELEFUNKEN ELECTRONIC • fi^SQQ^b 000*3012 Ö TLH.8400 ITllUilFMMliSIlK electronic CreativeTechnologies T - 4 i - a i High Efficiency LEDs 0 8 mm in tinted diffused packages Color Type Technology Red TLHR 8400 GaAsPon GaP Yellow TLHY 8400 GaAsP on GaP


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    21onstanl tlhr8400 TLHg 8400 TLHY PDF

    lm 3751

    Abstract: cree xre Cree Q5 LED lm 4017 cree q5 cree xr-e q5 CREE XR-C N4 CREE XR-E Q4 XR-E Q5 LM 329 N
    Text: Cree XLamp® XR-E and XR-C LED Binning and Labeling Introduction This document describes the product nomenclature required to select and order Cree’s XLamp XR-E and XR-C LEDs. XLamp XR-E and XR-C LEDs are tested and sorted into bins which are then combined into orderable kits identified by an order


    Original
    00P03 CLD-AP12 lm 3751 cree xre Cree Q5 LED lm 4017 cree q5 cree xr-e q5 CREE XR-C N4 CREE XR-E Q4 XR-E Q5 LM 329 N PDF

    Untitled

    Abstract: No abstract text available
    Text: SFW/I9Z14 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 jiA Max. @ VOS= -60V


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    SFW/I9Z14 7Tb414E 7Tb4142 PDF

    BAS45L

    Abstract: S18B
    Text: SbE D m 711DÖ5b 0DMD1Ö7 T1D « P H I N PHILIPS INTERNATIONAL BAS 45L SbE D T -O T -tS LOW LEAKAG E DIODE FOR SURFACE M OUNTING The BAS45L is a switching diode w ith a very low reverse current. This SM diode is a leadless diode in a hermetically sealed SOD-8 O envelope w ith lead/tin-plated metal


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    BAS45L T-07-1 BAS45L T-07-15 S18B PDF

    LM 739 N

    Abstract: CREE XR-E Q3 cree xre CREE XR-E Q4 008E6 lm 3751 CREE XR-C N4 LM 3371 cree xr-e q5 XR-E Q5
    Text: Cree XLamp® XR-E and XR-C LED 编号和标贴 简介 本文档描述了选购 Cree XLamp XR-E LED 和 XR-C LED 时需要了解的产品命名原则。 XLamp XR-E LED 和 XR-C LED 经过测试后按照不同的编号分类,然后将它们组成各种可用订购


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    00A03 00J01 00J02 00J03 00K01 00K02 00K03 00P01 00P02 00P03 LM 739 N CREE XR-E Q3 cree xre CREE XR-E Q4 008E6 lm 3751 CREE XR-C N4 LM 3371 cree xr-e q5 XR-E Q5 PDF

    LM 3371

    Abstract: CREE XR-E Q4 cree xr-e q5 wj 308 006F5 00p02
    Text: CLD AP12 REV 8 BINNING & LABELING Cree XLamp XR-E and XR-C LED ® INTRODUCTION TABLE OF CONTENTS This document describes the product nomenclature Bin and Order-Code Format. 3 required to select and order Cree’s XLamp XR-E and


    Original
    PDF

    6d54

    Abstract: h8830
    Text: SuperH RISC engine Peripheral LSI HD64404 Hardware Manual ADE-607-042 Rev. 1.0 09/13/02 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    HD64404 ADE-607-042 HD64404 6d54 h8830 PDF

    BSS123

    Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
    Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


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    BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011 PDF