acrian RF POWER TRANSISTOR
Abstract: F627-8Q1 F627-8-Q1 VTV-150-4 ACRIAN sje transistor VTV075 VTV150 VTV-150 VTV-150-3
Text: • m r s -é à -^ T S T N c -^ r ^ r io ia a -iiB DDD1S5G a | « m m p w GENERAL m h -v m m m m m «nn*n« w «h » n m m m r m m p h r i m m b m h m □ 7“-> T -7 J AN ■ VTV-150 DESCRIPTION The VTV -1 5 0 is a silicon NPN transistor designed for broadcast
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T82998-7c
5-70pF
2-20pF
25-240pF
1000pF
F627-8Q1
acrian RF POWER TRANSISTOR
F627-8Q1
F627-8-Q1
VTV-150-4
ACRIAN
sje transistor
VTV075
VTV150
VTV-150
VTV-150-3
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Untitled
Abstract: No abstract text available
Text: D IO D E M O D U L E f .R.d . FDF60BA40/60 Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed
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FDF60BA40/60
100ns
DC60A
00A///
00D1S23
Q00152M
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DIODE A93
Abstract: 251C FDF60BA 5210s TI-251
Text: DIODE M ODULE F.R.D. FDF60BA40/60 UL;E76102(M ) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed
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FDF60BA40/60
FDF60BA
100ns
DC60A
E76102
for36
00D1S23
FDF60BA
7CH1243
DIODE A93
251C
5210s
TI-251
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Untitled
Abstract: No abstract text available
Text: AP E X mCROTECHNOLOGY P i=V“ . CORP b?E J> Qfl7flb3b 0001520 T3T H A U T ._ >u PAI2 • PA12A A P E X M ICROTECH NOLOG Y CORPORATION • APPLICATIONS HOTLINE 8 0 0 5 46-A P EX 80 0-54 6-27 3 9 FEATURES • • • • • • LOW THERMAL RESISTANCE — 1.4 C/W
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PA12A
546-APEX
PA12H
100kHz
500Si,
500i2,
PA12MU
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