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    2n5320

    Abstract: 2N5320 MOTOROLA 2N5321 2N5321 MOTOROLA
    Text: MOTORCLA SC 12E D I b3b?aSM 00flb434 Ö | XSTRS/R F 'T-3Ç- 'P 2N5320 2N5321 CASE 79-04, STYLE 1 TO-39 TO-205AD) M A X IM U M RATINGS Symbol Rating 2N5320 2N5321 U nit Collector-Emltter Voltage VcEO 75 50 Vdc Collector-Base Voltage VcBO 100 75 Vdc Emitter-Base Voltage


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    00flb434 2N5320 2N5321 2N5321 O-205AD) 2N5320 MOTOROLA 2N5321 MOTOROLA PDF

    PD488170L

    Abstract: NEC 488170L D488170L RDRAM cross reference NEC RDRAM 36 REF05
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT jiiP D 4 8 8 1 7 0 L 18M-BIT Base Rambus DRAM 1M-WORD X 9-BIT X 2-BANK ★ Description The 18-Megabit Rambus DRAM RDRAM is an extremely-high-speed CMOS DRAM organized as 1M word x 9 bits x 2 banks and capable of bursting up to 256 bytes of data at 1.67 ns per byte. The use of Rambus


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    18M-BIT 18-Megabit /XPD488170L P32G6-65A bM27525 PD488170L NEC 488170L D488170L RDRAM cross reference NEC RDRAM 36 REF05 PDF