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    NE25339-U77

    Abstract: NE25339U77 NE25339 dual-gate NE25339U76
    Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE Vgs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		NE25339 NE253 bM27525 00L5442 OT-143) NE25339 NE25339-T1 NE25339U76 NE25339T1U76 NE25339-U77 NE25339U77 dual-gate PDF