Untitled
Abstract: No abstract text available
Text: CMOS Clocked FIFO With Bus Matching and Byte Swapping IDT723613 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity FIFO buffering data from Port A
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IDT723613
64x36
36-bits
18-bits
00S742b
IDT723613
PN120-1)
PQ132-1)
3145drw21
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SIEMENS SMT-TOPLED
Abstract: sfh siemens
Text: SIEMENS NPN-Siliziiim-Fototransistor im SMT-TOPLED -Gehäuse mit Tageslichtsperrfilter Silicon NPN Phototransistor in SMT-TOP-LED® with Daylight Filter SFH 320 SFH 320 F M a ß e in m m , w en n nicht an d ers ang egeb en /D im en s io n s in m m , unless otherw ise specified.
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8235b
00S74T1
Photocurrent/pCE//pCE25°
0535bGS
S74T2
SIEMENS SMT-TOPLED
sfh siemens
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Untitled
Abstract: No abstract text available
Text: HARRIS H S E M I C O N D U C T O R A 5 1 3 Triple 125MHz Video Amplifier July 1994 Description Features • Wide Unity Gain B a n d w id th .125MHz • Slew R a t e . 475V/ns
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125MHz
125MHz
75V/ns
HA5013
1-800-4-HARRIS
00574fl2
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Phototransistor bp 101
Abstract: fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4
Text: SIEMENS NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103B BP 103 BF Area not flat Emitter _ 2 5 .2 _ J 2 4.2 Collector 8.2 Approx. weight 0 .2 g
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/PCEtfpcE25Â
23SL0S
oE025Â
Phototransistor bp 101
fototransistor led
bf 252
SFH 207
Q62702-P1057
Q62702-P1058
Q62702-P1192
Q62702-P85-S2
Q62702-P85-S3
Q62702-P85-S4
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2N3684
Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A
Text: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0
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T0Stifl73
00S740
2N3684
2N3685
2N3686
2N3687
2N4117
2N4117A
2N4118
2N4118A
2N4119
2N4119A
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Untitled
Abstract: No abstract text available
Text: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A D E - 2 0 3 - 1 8 6 A Z R e v . 1 .0 M ay. 22, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2
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HM5241605C
072-word
16-bit
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ntc 50-13
Abstract: ntc 50-20 HA050 HA5020-5 data sheet ntc 50-13
Text: i l i H V l V S E M I C O N D U C T O R A R R HA-5020 I S 100M H z Current F e e d b ack V id e o Am plifier june 1994 Description Features Wide Unity Gain B and w idth . 100MHz The HA-5020 is a wide bandwidth, high slew rate amplifier
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HA-5020
HA-5020
43DPS71
00S74T3
ntc 50-13
ntc 50-20
HA050
HA5020-5
data sheet ntc 50-13
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MEB20C6
Abstract: nfz2a6
Text: 4496205 406 0 2 7 4 8 H I T A C H I / OP lU t t - E C T K U N I U ^ H ITA CH I/-CO PTO ELECTRO N ICS} ^ DE ( M M T b a G S M o d u le s • K7*'j Type M 4C-1 M 4E-1 M4G-1 M 4B-32 M 4C -32 M 4E-32 M 4B-52 M 4C -52 M 4E-52 M 4C-6 M4E-6 M 4G-6 V rrm CV) 200
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4B-32
4E-32
4B-52
4E-52
00S74Ã
NFM10A4A1
NFM10A6A1
NFM16A4A1
NFM16A6A1
NFM10B4A1
MEB20C6
nfz2a6
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TPS 436 IRA
Abstract: IC-3218B
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
iiPD42S16160Lr
4216160L,
42S18160L,
4218160L
TPS 436 IRA
IC-3218B
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phototransistor 650 nm
Abstract: SFH309 FA
Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 P SFH 309 PF Area not fla t E m itter C o lle ctor position Maße In mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
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0D574Ö
SFH309PF
pce25°
phototransistor 650 nm
SFH309 FA
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TL 1838
Abstract: Neutron sensitive PIN diode
Text: H A R R IS S E M I C O N D U C T O R FRX234D, FRX234R FRj 234H Radiation Hardened N-Channel Power MOSFETs June 1994 Package Features • 2.5A, 250V, RDS(on) = 0.7000 LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma
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FRX234D,
FRX234R
100KRAD
300KRAD
1000KRAD
3000KRAD
to1E14
35MeV/mg/
cm227
00S74L1
TL 1838
Neutron sensitive PIN diode
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IN752 zener diode
Abstract: IN659 IN965 in4938 IN752 IN751 in755 zener in758 in753 zener in753 zener diode
Text: FAIRCHILD SEMICONDUCTOR ~ai deT| 3*4t i b 74 00271470 a J 3469674 FAIRCHILD SEMICONDUCTOR FAIRCHILD I A Schlumberger Company 84D 2 7 4 7 8 1N658/FDLL658 General Purpose Diodes T o i -Q°\ PACKAG ES 1N658 FDLL658 • B V . . . 120 V MIN @ 100 *iA • VF . 1 . 0 V ( M A X ) @ 1 00 mA
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00E747A
1N658/FDLL658
1N658
FDLL658
DO-35
LL-34
FDS01400
IN752 zener diode
IN659
IN965
in4938
IN752
IN751
in755
zener in758
in753 zener
in753 zener diode
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74ABT373DB
Abstract: 74abt373 Philips 74ABT 74ABT373 74ABT373D 74ABT373N
Text: PHILIPS INTERNATIONAL bSE D • 7110ABL, □057475 BAD ■ P H I N Philips Semiconductors Advanced BiCMOS Products Product specification Octal transparent latch 3-State 74ABT373 QUICK REFERENCE DATA FEATURES • 8-bit transparent latch SYMBOL CONDITIONS
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7110fl2b
00S747S
74ABT373
64mA/-32mA
500mA
74ABT373
74ABT
500ns
74ABT373DB
74abt373 Philips
74ABT373D
74ABT373N
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The nPD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page
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PD42S16165L,
4216165L
16-BIT,
nPD42S16165L,
16165Lare
juPD42S16165L
4216165L
k42752S
aDS74%
16165L,
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