HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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Abstract: No abstract text available
Text: QS7026A, QS70261A PRELIMINARY High-Speed CMOS 16K x 16 Asynchronous Dual-Port RAM Ô QS7026A QS70261A FEATURES/BENEFITS • High-speed asynchronous dual-port architecture • Independent port access and control • Access times from either port, 25/35/45/55 ns
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QS7026A,
QS70261A
QS7026A
QS70261A
100-pin
84-pin
QS7026A
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Untitled
Abstract: No abstract text available
Text: QS7025A PRELIMINARY High-Speed CMOS 8K X 16 QS7025A Asynchronous Dual-Port RAM FEATURES/BENEFITS • • High-speed asynchronous dual-port architecture • Independent port access and control • Access times from either port, 25/35/45/55 ns • Master/slave pin, for width expansion
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QS7025A
QS7025A
84-pin
100-pin
MDSF-00010-04
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Abstract: No abstract text available
Text: QS70681 PRELIMINARY Q High-Speed CMOS 16K x 18 Asynchronous Dual-Port RAM QS70681 FEATURES/BENEFITS • • • • • • • High-speed asynchronous x18 dual-port RAM architecture Independent port access and control Access times from either port, 25/35/45/55 ns
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QS70681
QS70681
100-pin
MDSF-00014-02
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Abstract: No abstract text available
Text: QS70581 PRELIMINARY High-Speed CMOS « i, ^« 8K x 18 Asynchronous Dual-Port RAM Ö _ QS70581 FEATURES/BENEFITS • • • • • • • High-speed asynchronous x18 dual-port RAM architecture Independent port access and control Access times from either port,
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QS70581
QS70581
100-pln
100-Pin
MDSF-00013-02
4bb003
000217b
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Untitled
Abstract: No abstract text available
Text: QS7026A, QS70261A PRELIMINARY Q High-Speed CMOS 16K x 16 Asynchronous Dual-Port RAM QS7026A QS70261A FEATURES/BENEFITS • • • • • • • • H igh-speed asynchronous dual-porl architecture Independent port access and control A ccess tim es from either port,
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QS7026A,
QS70261A
QS7026A
QS70261A
S70261A
100-pin
0261A
84-pin
S7026A
S7026
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ITT taa 775
Abstract: 014L transistor CASE DIODE A5L QS702 a6l diode
Text: QS7025A PRELIMINARY High-Speed CMOS 8 K X 1 6 QS7025A Asynchronous Dual-Port RAM FEATURES/BENEFITS • High-speed asynchronous dual-port architecture • Independent port access and control • Access times from either port, 25/35/45/55 ns • Master/slave pin, for width expansion
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QS7025A
QS7025A
5A-25
84-Pin
100-Pin
MDSF-00010-04
ITT taa 775
014L transistor
CASE DIODE A5L
QS702
a6l diode
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S2MH
Abstract: No abstract text available
Text: IHM M 67024 DATA SHEET 4 K x 16 CMOS DUAL PORT RAM FEATURES . FAST ACCESS TIME: 35 NS TO 55 NS 30 NS PRELIMINARY FOR COMMERCIAL ONLY WIDE TEMPERATURE RANGE: - 55 °C TO + 125 °C 67024 L LOW POWER 67024 V VERY LOW POWER SEPARATE UPPER BYTE AND LOWER BYTE CONTROL
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67024/Rev
S2MH
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Untitled
Abstract: No abstract text available
Text: Tem ic L 67024 MATRA MHS 4 K x 16 CMOS Dual Port RAM 3.3 Volt Introduction The L 67024 is a very low power CMOS dual port static RAM organised as 4096 x 16. The L 67024 is designed to be used as a stand-alone 16 bit dual port RAM or as a combination MASTER/SLAVE dual port for 32 bit or
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Abstract: No abstract text available
Text: T em ic M 67025 MATRA MHS 8 K x 16 CMOS Dual Port RAM Introduction The M 67025 is a very low power CMOS dual port static RAM organised as 8192 x 16. The M 67025 is designed to be used as a stand-alone 16 bit dual port RAM or as a combination MASTER/SLAVE dual port for 32 bit or
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