Untitled
Abstract: No abstract text available
Text: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1532-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless
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0150V170100
5SYA1532-00
prEN50124-1
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 Doc. No. 5SYA1532-02 June 04 • Low-loss, rugged IGBT SPT chip-set • EMC friendly switching characteristics • Low profile compact baseless package for good power cycling • Suitable for snap-on gate-driver
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0150V170100
5SYA1532-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1532-00 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless
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Original
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PDF
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0150V170100
5SYA1532-00
prEN50124-1
CH-5600
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ABB IGBT inverter
Abstract: abb inverter 5SNS0300U120100
Text: L oP a k VCE SAT (V) Low profile, low inductance three-phase bridges ABB’s LoPak range of three-phase IGBT modules are designed with reliability and high life expectancy in mind. LoPak uses DCB substrates (Direct Copper Bonding) for high IOL (IntermitOn-State Voltage against collector current
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cho20100
0225U170100
0225U172100
ABB IGBT inverter
abb inverter
5SNS0300U120100
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