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    BUK637-400A

    Abstract: BUK637-400B in 4008 diode LP250 00a0B
    Text: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly


    OCR Scan     		BUK637-400A BUK637-400B T-31-IS- BUK637 -400A -400B in 4008 diode LP250 00a0B PDF

    BUK637-400A

    Abstract: BUK637-400B P02S
    Text: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable


    OCR Scan     		BUK637-400A BUK637-400B BUK637 -400A -400B BUK637-400B P02S PDF