ABB Semiconductors
Abstract: No abstract text available
Text: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1534-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless
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0225U170100
5SYA1534-00
prEN50124-1
CH-5600
ABB Semiconductors
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1534-00 Aug. 00 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless
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PDF
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0225U170100
5SYA1534-00
prEN50124-1
CH-5600
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SPT 5SNS 0225U170100
Abstract: No abstract text available
Text: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U170100 PRELIMINARY Doc. No. 5SYA1534-01 Jan. 04 • Low-loss, rugged IGBT SPT chip-set · EMC friendly switching characteristics · Low profile compact baseless package for good power cycling · Suitable for snap-on gate-driver
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0225U170100
5SYA1534-01
CH-5600
SPT 5SNS 0225U170100
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SPT 5SNS 0225U170100
Abstract: No abstract text available
Text: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1534-00 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless
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Original
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PDF
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0225U170100
5SYA1534-00
prEN50124-1
CH-5600
SPT 5SNS 0225U170100
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ABB IGBT inverter
Abstract: abb inverter 5SNS0300U120100
Text: L oP a k VCE SAT (V) Low profile, low inductance three-phase bridges ABB’s LoPak range of three-phase IGBT modules are designed with reliability and high life expectancy in mind. LoPak uses DCB substrates (Direct Copper Bonding) for high IOL (IntermitOn-State Voltage against collector current
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cho20100
0225U170100
0225U172100
ABB IGBT inverter
abb inverter
5SNS0300U120100
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