BO 649
Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington
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0235bQS
T-33-29
OP-66)
643/BD
645/BD
BD643.
0QQ43
T-33-29
BD647
BO 649
BD 104
darlington bd 645
TOP-66
b 647 c
BD 649
BD64S
Q62702-D376
BD 104 NPN
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Untitled
Abstract: No abstract text available
Text: FEATURES • High-speed operation • 1500 Vrms I/O isolation • Current-limit protection • High surge capability • Linear, ac/dc operation • Clean, bounce-free switching • Extremely low power consumption • High-reliability monolithic receptor • Surface-mountable
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LH1525ACD,
LH1526ACE
LH1525
LH1526
curre100
18-pln
fl535t
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SDA30C162
Abstract: 30C162 SDA 30C162 Siemens 3TB da 218 moy SMD NB18 30C163 adg smd NB b6 smd transistor
Text: SIEM ENS ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C163-2 Advanced Data Sheet 05.94 ÖB3SbQ5 0 0 ö0 5b 3 447 • SD A 30C163-2 Revision History: Original Version: 05.94 Previous Releases: Page Subjects changes since last revision
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30C163-2
30C163-2
0/A17
1/A18
A0-A15
ues04736
P35b05
fl23SbOS
SDA30C162
30C162
SDA 30C162
Siemens 3TB
da 218
moy SMD
NB18
30C163
adg smd
NB b6 smd transistor
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automatic phase selector circuit diagram
Abstract: smd ags "if amplifier" siemens P-DSO-20 Q6700-A5046 TDA6142X gg53 SIEMENS saw filter Quadrature Demodulator
Text: bSE ]> • 023StiGS 00537L,G S77 ISIEG SIEMENS SIEMENS AKTIEN6ESELLSCHAF SAT-IF-Demodulator TDA 6142X Bipolar IC Preliminary Data Features • Good C/N response through high input sensitivity • Reduced noise bandwidth of prescaler at 480MHz through LC circuit
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0DS37t
6142X
480MHz
P-DSO-20
TDA6142X
Q6700-A5046
ampS37h7
TDA6142X
ue504053
automatic phase selector circuit diagram
smd ags
"if amplifier" siemens
P-DSO-20
gg53
SIEMENS saw filter
Quadrature Demodulator
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514100J-80
Abstract: 514100j-10
Text: El SIEMENS f l5 3 5 b 0 5 0G2G140 1 E21SIEG S IE M E N S A K T I E N 6 E S E L L S C H A F 4M X 1-Bit Dynamic RAM 4 7 E 3> HYB 514100-80/-10 Advanced Information • • • • • • • • • • • 4 194 3 04 words by 1-bit organization Fast access and cycle time
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535b05
QG2G14G
-A10t
S23SbQS
T-46-23-15
SPS00556
514100J-80
514100j-10
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )
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5116400J-50/-60/-70/-80
soj-28/24
23SLG5
P-SOJ-28/24
23SLDS
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit sehr kleinem Dunkelstrom Silicon PIN Photodiode with Very Low Dark Current BPW 32 s p a c in g E L - R a d ia n t se nsitive UJ a re a 1.Ox 1.0 C a th o d e geooboi A p p ro x. w eigh t 0 .0 5 g M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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B3Sb05
G057517
53SL0S
DD57S1Ã
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Untitled
Abstract: No abstract text available
Text: SIEMENS 8-Bit CMOS Microcontroller SAB-C502 Preliminary • Fully compatible to standard 8051 microcontroller • Versions for 12 / 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing of program and external data memory
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SAB-C502
SAB-C502-2R
10-bit
15-bit
P-DIP-40
P-LCC-44
0El35tjDS
fl23SbOS
00bl314
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n
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07N20
67040-S
112-A
S35bQ5
SQT-89
B535bQ5
D13377Ã
B235bG5
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101F
Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal
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00QMQ41
ACY23
ACY32
Q60103-Y23-E
Q60103-Y23-F
Q60103-Y32-E
Q60103-Y32-F
Q62901-B1
fl23SbQS
000404b
101F
ACY23V
ACY32V
Q62901-B1
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sfh 309 fr
Abstract: No abstract text available
Text: SIEM EN S GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat* M f 0 .4 oo^ öö V 4.1 I—-3 .9 § .? !_ 4.0 3.6 -ífeÆ sa o -r Mw , 3.5 I Chip positio n X m 0 .4 — 29— 27 C athode=SFH 409 Anode =SFH487 A p p ro x. w e ig h t 0 .3 g
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SFH487
950nmK
023Sb05
sfh 309 fr
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H5092
B235b05
0Gb3272
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m43of
Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Text: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version
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PEB2091
PEF2091
013751t,
flE35b05
m43of
TAA 761
siemens Package Outlines P-LCC DATE CODE
3535B
aop 741
5MXE
siemens lsl
siemens 58 295 84 pin intel 80
B209
B-209
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SLE4412
Abstract: 4412 SLE4412C
Text: SIEMENS Intelligent non erasable PROM SLE 4412 NMOS Features • • • • • 256 x 1 bit organization EPROM Bit by bit memory access (to realize a debit card) 96 bits protected in write mode by security cell Three areas: protected area, transaction area, test area
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SLE4412
0235bQS
IEP01
E35bOS
1140x1140
fl235bQ5
0Gb4b24
SLE4412
4412
SLE4412C
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Untitled
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon High-Voltage Transistors BFN 16 BFN 18 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low coilector-emitter saturation voltage • Complementary types: BFN 17, BFN 19 PNP
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Q62702-F885
Q62702-F1056
OT-89
235b05
D1B17TE
IS/18
fl235b05
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bch limit switch ll1
Abstract: SDA9064 EP-613 power supply sda 20160 EP-603 power supply ep 613 27mhz remote control transmitter and receiver ci VL-609 EP-613 DC POWER SUPPLY sda20160
Text: bSE D • ÖSBSbQS DQ53EÖ4 HTb WÊSIZG SIEMENS SIEMENS AKTIENGESELLSCHAF Digital Deflection Controller SDA 9064 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically
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DQ53E
100-/120-Hz
Q67100-H8382
P-DIP-40
fl23SbOS
0G5332Ö
235bQ5
bch limit switch ll1
SDA9064
EP-613 power supply
sda 20160
EP-603 power supply
ep 613
27mhz remote control transmitter and receiver ci
VL-609
EP-613 DC POWER SUPPLY
sda20160
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Untitled
Abstract: No abstract text available
Text: • fl23Sb05 0 0 * 1 3 01 6 Sb^ ■ SIEMENS PROFET BTS 621 L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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fl23Sb05
PT05aa7
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RXTNB 2
Abstract: No abstract text available
Text: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9
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6235b05
RXTNB 2
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH750 SFH750V T13/4 5 mm LED PACKAGE PLASTIC CONNECTOR HOUSING Plastic Fiber Optic Emitter FEATURES • 2.2 mm aperture holds standard 1000 micron plastic fiber • No fiber stripping required • • • • Good linearity Sensitive in visible and near IR range
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SFH750
SFH750V
SFH750V
18-pln
fl535t
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Q62702-D1070
Abstract: TRANSISTOR D 1785 BD430
Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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T-33-/7
Q62702-D1070
fl23Sb05
Q0043b2
BD430
Q62702-D1070
TRANSISTOR D 1785
BD430
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A6 9008 ADM
Abstract: sem 2106 circuit diagram free sem 2106 sem 2106 24 pin sem 2106 diagram sem 2106 G1235 sem 2106 data set BC517A
Text: SIEM ENS 8-Bit CMOS Microcontroller C517A Advanced Inform ation Full upward com patibility with SAB 80C517A/83C517A-5 Up to 24 MHz external operating frequency - 500 ns instruction cycle at 24 MHz operation Superset of the 8051 architecture with 8 datapointers
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C517A
80C517A/83C517A-5
NL-2500
S-164
0S35bG5
A6 9008 ADM
sem 2106 circuit diagram
free sem 2106
sem 2106 24 pin
sem 2106 diagram
sem 2106
G1235
sem 2106 data set
BC517A
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HYB514256A
Abstract: Q67100-Q490 514256A HYB514256 514256az
Text: a ô23SbOS 0 0 2 0 4 2 1 b B I S I E 6 SIEMENS AKTIENGESELLSCHAF SIE ^ 47E D ^ ' 2 3 - / 7 ì 4 HYB514256AL-60/-70 256K x 4-Bit Dynamic RAM Low Power Version Advance Information • 262 144 x 4-bit organization • Fast access and cycle time 60 ns access time
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23SbOS
HYB514256AL-60/-70
514256AL-60)
514256AL-70)
HYB514256AL-70)
P-DIP-20-T
20A20DIN41870
HYB514256A
Q67100-Q490
514256A
HYB514256
514256az
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Untitled
Abstract: No abstract text available
Text: Capacitors with Soldering Star SIKOREL 125, LL Grade B 41 592 Extremely high reliability and long service life Operation at temperatures up to 125 *C Construction • Charge-discharge proof, polar • Aluminum case, partially insulated • Solder pin terminals on mounting base that is securely
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jxF/250
023Sb05
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