BD 649
Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington
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fl23SLQS
T-33-29
OP-66)
643/BD
645/BD
BD647.
BD843,
BD645.
BD647,
BD 649
2SC 645
TOP-66
BD 104 NPN
darlington bd 645
BD 649/BD 650
BD647
BD 104
Q62702-D229
Q62901-B65
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BSM25GB120D
Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Text: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge
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0235bG5
C67076-A2109-A2
C67076-A2009-A2
S23SbDS
DGMSfi22
BSM25GB120D
C160
SC10
siemens igbt BSM 150 Gb 160 d
SIEMENS ks
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Untitled
Abstract: No abstract text available
Text: bOE D T - 4 f-£>0 0235bG5 004b54H Sb3 « S I E G SFH 2210 SIEMENS TERNARY PIN PHOTODIODE T 01 8 P A C K A G E SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm Chip Location -*H] FEATURES Maximum Ratings • InGaAs/lnP PIN Photodiode
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0235bG5
004b54H
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siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
00702fl2
siemens sab 82532
82258
SA 82532
SAB 80286
csc 2323
sab80286
STT 3 SIEMENS
80286 microprocessor pin out diagram
ESCC2
siemens sab 82525
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PLCC-68 8051 siemens
Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Text: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only
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80C515/80C535
80C515/80C515-16
80C535/80C535-16
80C515
16-bit
8235b05
MQFP-80
0H35b05
PLCC-68 8051 siemens
80C32
smd marking b4h
smd marking code fj FET
80C535
80c535-n
ma A235
sab-80535
SMD MARKING CODE E2H
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smd transistor 2gu
Abstract: smd 5b1 5B1 zener diode smd transistor 5B1 smd diode hn 5B1 package SMD smd TRANSISTOR code AJ e3062a SMD DIODE 517 BTS442D2
Text: • □0^27^5 aP3SbGS SIEM ENS ST1 ■ PROFET BTS 442 D2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection
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capac05-A2
O-220AB/5,
E3043
E3043
Q67060-S6205-A3
O-22QAB/5,
E3062
BTS442D2
E3062A
Q67060-S6205-A4
smd transistor 2gu
smd 5b1
5B1 zener diode
smd transistor 5B1
smd diode hn
5B1 package SMD
smd TRANSISTOR code AJ
e3062a
SMD DIODE 517
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eeprom 24C16 5 pin
Abstract: 24C16-S 24C08 CHIP 8-PIN 24c16 24c16 EEPROM 24c16 wp DATA SHEET 24C16 24c08 wp 24C16 application Q67100-H3226
Text: • ÔE35h05 □□TûflTfl h3S ■ S IE M E N S 8/16 K bit 1024/2048 x 8 bit Serial C M O S EE P R O M s, I 2C Synchro n o us 2-W ire Bus S L x 2 4C 08 /1 6 Preliminary Features I • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes
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24C08/16
235b05
eeprom 24C16 5 pin
24C16-S
24C08
CHIP 8-PIN 24c16
24c16 EEPROM
24c16 wp
DATA SHEET 24C16
24c08 wp
24C16 application
Q67100-H3226
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Untitled
Abstract: No abstract text available
Text: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2
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SAB-C501
SAB-C501
16-bit
P-DIP-40
P-LCC-44
SAF-C501
SAB-C501-L/C501
80C32/C52
80C52
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SAB 82258
Abstract: sab82257
Text: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range
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DD330S1
16-Bit
SAB82257
fl235b05
003310b
82257-N
Q67120-P176
82257-6-N
SAB 82258
sab82257
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Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212
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fi23SbOS
0031bl0
82C212
M/256
640CHAF
SAB82C212
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LA 7612
Abstract: 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782
Text: SIEMENS 2 -P hase S tepper-M o tor D river TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current
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Q67000-A9099
P-DIP-20-3
S235b05
01G3b2Q
25I20X
01Q3b21
LA 7612
4727
TLE SO
CAY transistor sd
3 phase monitoring IC
IED01769
IED01772
IED01780
IED01781
IED01782
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B41550-A7478-Q
Abstract: A9688
Text: Capacitors with Screw Terminals SIKOREL 105, LL Grade B 41 550 B 41 570 Maximum reliability For highly professional switch-mode power supplies Operating temperatures up to 105 "C Construction • • • • • Charge-discharge proof, polar Aluminum case with insulating sleeve
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KAL0272-T
A235bDS
7M21A
0235bOS
B41550-A7478-Q
A9688
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Untitled
Abstract: No abstract text available
Text: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:
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G10404Ã
C509-L
A8-A15
A535bDS
235bD5
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 256k X 16-Bit Dynamic RAM HYB 514171BJ-50/-60 Advanced Inform ation • 262 144 w ords by 16-bit organization • 0 to 70 °C operating tem perature • Fast access and cycle time • RAS access time: 50 ns -50 version 60 ns (-60 version) • CAS access time:
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16-Bit
514171BJ-50/-60
P-SOJ-40-1
SPT03Q55
235bOS
flB35bOS
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POWER SUPPLY BTS SIEMENS
Abstract: siemens pwm 12v BTS630 E3230 sis 630 application note BTS SMD MARKING code 613
Text: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection
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T0220/7
E3128
B23SbDS
fl23SbDS
POWER SUPPLY BTS SIEMENS
siemens pwm 12v
BTS630
E3230
sis 630
application note BTS
SMD MARKING code 613
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DDMS770
Abstract: PC1210 SiEMENS EC 350 98 0
Text: bGE ]> • Ô235b05 00457ti5 T3S M S I E C SIEMENS SIEMENS AKTI ENGESELLSCHAF ■7- 2 3 - Ö SI MOPAC Module VDS / d 7 BSM 294 F = 1000 V = 2 x 18 A R DS on = 0.63 £2 • • • • • • • Power module Half-bridge FREDFET N channel Enhancement mode
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023SbOS
C67076-A1151-A2
fl23SbÃ
S1M00189
DDMS770
PC1210
SiEMENS EC 350 98 0
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Untitled
Abstract: No abstract text available
Text: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1317-A2
0235bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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Untitled
Abstract: No abstract text available
Text: SIEMENS Differential Magneto Resistor FP 412 L 100 t If delivery as tape,separate at punching-points 2) Connections on both sides free of lacquer g p x o 6777 3) Mechanical connections 4) Center—distance of Diff.-System s Approx. weight 0.2 g 2 1.3 pin connection
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o6777
fl235b05
00fl2fiSb
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Untitled
Abstract: No abstract text available
Text: •I ô23SbG5 □GC13Ü32 1 3 e ■ SIEM ENS PROFET BTS707 Smart Two Channel Highside Power Switch Features Product Summary • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection
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23SbG5
6235bD5
P-DSQ-20-9
Q67060-S7010-A2
23SbG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS SDA 4330-2X 1 Overview 1.1 Features • • • • • • 155 MHz FM and 40 MHz AM input frequency 30 mVeff AM and 50 mVeff FM sensitivity 16 bit IF counter up to 50 MHz Additional open drain ports controlled by PC 2-pin quartz oscillator Fast phase detector with short anti-backlash pulses
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4330-2X
P-DSO-24
Q67100-H5140
P-DSO-24-1
4330-2X
00fl7flb4
35x45â
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Transistor SMD SM 942
Abstract: No abstract text available
Text: SPD 30N03 I nf ineon tec h n o l og i « s SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current V 'd s f l D S o n fc> 30
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30N03
67040-S
144-A
-T0251-3-1
146-A
S35bQ5
Q133777
SQT-89
B535bQ5
Transistor SMD SM 942
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Untitled
Abstract: No abstract text available
Text: ñ23SbGS 00^3073 4SI SIEMENS PROFET BTS 733 L1 Smart Two Channel Highside Power Switch Product Summary Overvoltage Protection • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection
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23SbGS
P-DSO-20-9
BTS733L1
Q67060-S7008-A2
0235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS Differential Magneto Resistor FP 412 D 250 1 If delive ry a s ta p e , se p a ra te a t p u n ch in g —points 2 ) C on n e ctio n s on both sid e s fre e o f la c q u e r 3 ) M ech a n ica l co n n e c tio n s 4 ) C e n te r - d is ta n c e o f D iff.- S y s t e m s
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fl235b05
00fl2fiSb
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M x 4-Bit Dynamic RAM HYB 314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast Page Mode Operation • Performance: • -50 -60 -70 50 60 70 ns ^RAC RAS access time
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314400BJ/BJL-50/-60/-70
P-SOJ-26/20-5
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