Untitled
Abstract: No abstract text available
Text: IRSM505-024 IRSM515-024 Series 2.3Ω, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM505-024 and IRSM515-024 are 3-phase Integrated Power Modules IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of
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IRSM505-024
IRSM515-024
IRSM505-024
0123-412P
IRSM505-024PA
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G-1033
Abstract: No abstract text available
Text: G1033-024, 1310 nm GPON DFB Laser Chip DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s G1033-024, 1310 nm GPON DFB laser diode chip is designed to provide the source laser for uncooled PON applications for triple-play for voice, video and data applications. It is designed to perform the O/E and E/O
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G1033-024,
IEC-60825-1
G-1033
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OD-24X24-C
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs EMITTER CHIPS OD-24X24-C FEATURES .024 • High current capability .005 • 2 bond pads for uniform output .006 D 2 PLACES • Gold contacts for high reliability bonding .024 • High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless
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OD-24X24-C
100mA
400mW
200mA
OD-24X24-C
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs EMITTER CHIPS OD-24X24-C FEATURES .024 • High current capability .005 • 2 bond pads for uniform output • Gold contacts for high reliability bonding .006 D 2 PLACES .024 • High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless
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OD-24X24-C
100mA
200mA
400mW
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs EMITTER CHIPS OD-24x24-C FEATURES .024 • High current capability .005 • 2 bond pads for uniform output .006 D 2 PLACES • Gold contacts for high reliability bonding .024 • High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless
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OD-24x24-C
100mA
200mA
400mW
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Untitled
Abstract: No abstract text available
Text: Formosa MS MELF Zener Diodes DL4728A THRU DL4764A Surface mount Zener type DL-41 Features 1Watt Power Dissipation High Voltages from 3.3 ~ 100V .205 5.2 .190(4.8) Designed for mounting on small surface Extremely thin/leadless package SOLDERABLE ENDS .024(.60)
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DL4728A
DL4764A
DL-41
MIL-STD-750,
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1N4150-1
Abstract: No abstract text available
Text: 1N4150-1 Switching Diode ESA QUALIFIED FEATURES • • • • Qualified to ESA/SCC 5101/024 Metallurgical Bond DO-35 Package Hermetically Sealed Glass Package 1.53/ 2.28 12.7min MAXIMUM RATINGS -65oC to +175oC -65oC to +175oC 4.0A 0.5A 25oC/W max. See Note 4
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1N4150-1
DO-35
-65oC
175oC
25oC/W
250oC/W
500mW
200mA
1N4150-1
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DL5817-DL5819
Abstract: 5819 DIODE SM5817 SM5819 5817 melf diode IN 5817
Text: DL5817-DL5819 Silicon epitaxial planer type Features MELF/LL-41 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. .205 5.2 .190(4.8) .024(.60)
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DL5817-DL5819
MELF/LL-41
MIL-S-19500
MIL-STD-750,
DL5817-DL5819
5819 DIODE
SM5817
SM5819
5817 melf
diode IN 5817
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1N5230
Abstract: 1N5254A 1N5230A 1N5230B 1N5231A 1N5232A 1N5233A 1N5234A 1N5235A 1N5236A
Text: ½ Watt ZENER DIODES 4.7V to 62V 1N5230.5265 Series Data Sheet Mechanical Dimensions Description JEDEC D0-35 .120 .200 1.00 Min. .060 .090 .024 typ. Features n WIDE VOLTAGE RANGE n 5 & 10% VOLTAGE TOLERANCES AVAILABLE Maximum Ratings n MEETS UL SPECIFICATION 94V-0
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1N5230.
D0-35
1N5230
1N5254A
1N5230A
1N5230B
1N5231A
1N5232A
1N5233A
1N5234A
1N5235A
1N5236A
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DLF105
Abstract: DLF101 DLF101-DLF106 DLF102 DLF103 DLF104 DLF106
Text: DLF101-DLF106 Fast recovery type Features MELF/LL41 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. .205 5.2 .190(4.8) SOLDERABLE ENDS .024(.60)
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DLF101-DLF106
MELF/LL41
MIL-S-19500
MIL-STD-750,
DLF105
DLF101
DLF101-DLF106
DLF102
DLF103
DLF104
DLF106
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kz4 diode
Abstract: ky4 diode ky6 diode diode ky5 diode kz4 y8 zener marking kz5 sot-23 diode ky6 zener marking kz3 sot-23 Y5 kz4 kz2 diode
Text: BZX84Cxxx SERIES .120 3.04 .106(2.70) 350mW Zener Surface Mount Diode .103(2.60) .086(2.10) .063(1.6) .047(1.2) .024(.60) .015(.45) .080(2.04) .070(1.78) .008(.20) .003(.08) .006(.13)MIN. .055(1.40) .035(0.89) .020(.50) .013(.30) .005 (0.18) MAX PRIMARY CHARACTERISTICS
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BZX84Cxxx
350mW
OT-23
OT-23
MIL-STD-20
kz4 diode
ky4 diode
ky6 diode
diode ky5
diode kz4 y8 zener
marking kz5 sot-23
diode ky6 zener
marking kz3 sot-23
Y5 kz4
kz2 diode
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esaki Diode
Abstract: detail of half adder ic TUNNEL DIODE SCHINDLER GaAs tunnel diode MT-021 tunnel diode GaAs AD9235 AM687 MC1650
Text: MT-024 TUTORIAL ADC Architectures V: Pipelined Subranging ADCs by Walt Kester INTRODUCTION The pipelined subranging ADC architecture dominates today's applications where sampling rates of greater than 5 MSPS to 10 MSPS are required. Although the flash all-parallel architecture
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MT-024
MT-020)
1980s
1990s,
esaki Diode
detail of half adder ic
TUNNEL DIODE
SCHINDLER
GaAs tunnel diode
MT-021
tunnel diode GaAs
AD9235
AM687
MC1650
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Untitled
Abstract: No abstract text available
Text: IRLR020/024 IRLU020/024 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRLR020/024
IRLU020/024
IRLR024/IRLU024
IRLR020/IRLU020
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH317 DAYLIGHT FILTER SFH317F SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm Surface not flat ¿039(1.0) .020 (.5) .028 (.7) .024(6) 024 ( ^ .016 (.4) n - • o iy ) .100(2 54) Collector .100(254) Emitter 1 " r L071(1J) '.047(1.2) 151 (385)
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SFH317
SFH317F
Filter-SFH317F
950nm)
a23b32b
vity-SFH317
tivity-SFH317F
SFH317/F
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siemens SFH nm
Abstract: A950
Text: SIEMENS SFH 205 SFH 205Q2 SFH 206 SILICON PIN PHOTODIODE DAYLIGHT FILTER Package Dimensions in Inches mm 1.336 (34) 1.258 (32) .100 (2.54) .024 (.6) •016(4) .161 (4.11 .145 ( 3 . r .031 (.8) .016 (.4) S>7\ (1.8) .047(1.2) .024 (.6) (254) .016 (.< .200 (5.1)J
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205Q2
20SQ2
205/SFH
siemens SFH nm
A950
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Untitled
Abstract: No abstract text available
Text: SFH 409 SIEMENS INFRARED EMITTER Package Dimensions in Inches mm 204 (5 2) 024 ( 6) 0 1 6 (4 ) 1S7 (4 0) 141 (3 6) 028 ( 7) 0 1 6 (4 ) *122(3 1) 100 (2 54) 114(2 9) 024(6)11 071 (1 6) 047(1 2) 0 1 6 (4 )^ ^ ^ 1 140(29) 1.061 (27) FEATURES M a x im u m R atings
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SFH409
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11EQS02L
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS02L 1.1A/20V FEATURES ° Miniature Size 2.7 .106 DIA MAX ° Extremely Low Forward Voltage Drop ? Low Power Loss, High Efficiency 0.60(.024)nTA 0.54C021) ° High Svirge Capability 27(1.06) MIN o 20 Volts thru 100 Volts Types Available
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A/20V
11EQS02L
bbl5123
11EQS02L
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS05 11EQS06 1.1A/50~60V FEATURES • Miniature Size MAX 'DIA 2.7 .106 , < ± ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60(.024) d ia 0.54C021) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available
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11EQS05
11EQS06
54C021)
GDD17b2
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS03 11EQS04 1.1A/30~40V FEATURES 2.7 .106 1'DIA » Miniature Size MAX • Low Forward Voltage Drop «Low Power Loss, High Efficiency 0.60(.024) DIA 0.54(.Q21) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available .27(1.06)
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11EQS03
11EQS04
bblS123
20mVrms
100KHz
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bSE » bbS3^31 QD2b4fi2 024 BY505 IAPX HIGH-VOLTAGE SOFT-RECOVERY RECTIFIER DIODE Glass-passivated rectifier diode in hermetically sealed axial-leaded glass envelope. It is intended as general purpose rectifier for high frequencies and features non-snap-off soft recovery switching
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BY505
OD-61.
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11ES2
Abstract: No abstract text available
Text: SILICON RECTIFIER DIODE ÌA/IOO— 800V JJIII 11ES4 FEATURES ‘2.7 .106 dia . M A X U1A ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.6CH.024)nrA 0.54<.0211 ° High Surge Capability .27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing
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11ES4
11ES1
11ES2
11ES4
11ES8
-25-C
11ES1-
11ES8
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11EFS3
Abstract: 11EFS4
Text: 1.1A/300— 400V/trr : 30nsec FAST RECOVERY DIODE 11EFS3 11EFS4 FEATURES 2.7 .106 DIA MAX 0 Miniature Size ° Ultra - Fast Recovery 0.60(.024)d ia 0 .54(.021) ° Low Forward Voltage Drop . 27 ( 1.06) MIN o Low Power Loss, High Efficiency ° High Surge Capability
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lA/300
00V/trr
30nsec
11EFS3
11EFS4
11EFS3
0GG1S04
11EFS4
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SFH415 applications
Abstract: No abstract text available
Text: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES
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SFH416
SFH415
416-R
-SFH415
SFH416
SFH415 applications
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES '2.71.106 DIA MAX » Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60 .024) rjr a 0.541.021) ° High Surge Capability 27(1.061 M IN ° 20 Volts thru 100 Volts Types Available
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A/90--
11EQS09
11EQS10
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