Untitled
Abstract: No abstract text available
Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e
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32-Pin
Am28F010A
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am29f010
Abstract: No abstract text available
Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands
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Am29F010
32-pin
Am29F040
02S7S2A
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AM29F040A
Abstract: 17113D-4 AMD date code 29f040 Am29F040
Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards
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Am29F040
32-pin
0257S2fl
0033bH3
AM29F040A
17113D-4
AMD date code 29f040
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Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY 14E D | 0ES752fl üa27t.?S Am27C49 =1 Adva^ 65,536-Bit (8192x8 High-Performance CMOS PROM Devices DISTINCTIVE CHARACTERISTICS • • • High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs —
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0ES752fl
Am27C49
536-Bit
8192x8)
9890A-6
025752a
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Untitled
Abstract: No abstract text available
Text: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current
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Am28F256A
32-Pin
033A1b
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Untitled
Abstract: No abstract text available
Text: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements
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Am29F100T/Am29F100B
8-Bit/65
16-Bit)
48-pin
29F100T/Am29F100B
29F100
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MAE A1470
Abstract: No abstract text available
Text: ADV MICRO MEMORY 3ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ A MD 4 '-* 4 6 -1 2 -2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tlme-S5 ns ■ JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current
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Am27C256
128K-bit,
003Q2bL>
MAE A1470
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements
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Am29LV800T/Am29LV800B
8-Bit/524
16-Bit)
44-pin
48-pin
16-038-S044-2
752ft
003355b
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Untitled
Abstract: No abstract text available
Text: ]>i| 02S7S2Ö OOSSSÖS T ADV MICRO -CMEMORY} 0257528 ADV M I C R O MEMORY 89D 25 585 T dfi q S" Am27LS07 flft T462308 64-Bit Low-Power Noninverting-Output Bipolar RAM Ï DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit low-power Schottky
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02S7S2Ã
Am27LS07
64-Bit
16-word
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AM27C64
Abstract: No abstract text available
Text: AOV MI CR O MEMORY IM E D Q 0ES7S26 O O S V a 1! ? i l T-Hb-i%-Z°[ A m 2 7 C 6 4 “ 8,192 x 8-Bit CMOS EPROM £ Devices D IS T IN C T IV E C H A R A C T E R IS T IC S JEDEC-approved pinout ± 10% power supply tolerance available One-Time Programmable OTP Flashrite program
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0ES7S26
Am27C64
64K-bit,
27C64
0257S2Ã
T-46-13-29
WF000555
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AM9864
Abstract: AM9864-2 AM9864-20 AM9864-25 AM9864-3 b00053
Text: ADV MICRO -CHEflORY} Tb Am9864 Am9864 8 1 9 2 x 8 -B it Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS Fast Read Access Time Am9864-2/-20 : 200 ns Am9864 /-25 : 250 ns Am9864-30 : 300 ns Am9864-3/-35 : 350 ns Minimum endurance of 10,000 write cycles per byte with
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Am9864
Am9864-2/-20
Am9864
Am9864-30
Am9864-3/-35
6891A
MIL-STD-883,
AM9864-2
AM9864-20
AM9864-25
AM9864-3
b00053
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