Untitled
Abstract: No abstract text available
Text: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • • • • • PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. To + 125°C with voltage derating. New extended range offerings.
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Original
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EIA-481-1
178mm]
330mm]
535BAAC
02-Apr-03
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PDF
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Untitled
Abstract: No abstract text available
Text: TLW.8600 VISHAY Vishay Semiconductors TELUX \ Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP
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Original
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D-74025
02-Apr-03
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PDF
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M48Z35
Abstract: M48Z35Y SOH28
Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:
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Original
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M48Z35
M48Z35Y
256Kbit
32Kbit
M48Z35:
M48Z35Y:
28-lead
M48Z35
M48Z35Y
SOH28
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PDF
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M48Z35AV
Abstract: M48Z35AY M4Z28-BR00SH1 SOH28
Text: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ BATTERY LOW FLAG (BOK) ■ AUTOMATIC POWER-FAIL CHIP DESELECT
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Original
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M48Z35AY
M48Z35AV
28-pin,
M48Z35AY:
PCDIP28
M48Z35AV:
28-LEAD
M48Z35AV
M48Z35AY
M4Z28-BR00SH1
SOH28
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PDF
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FES8JT
Abstract: FES8GT FES8AT
Text: FES8JT, FESF8JT, FESB8JT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Plastic Rectifiers Reverse Voltage 50 to 600V Forward Current 8.0 A Reverse Recovery Time 35 to 50ns ITO-220AC FESF8JT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)
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Original
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ITO-220AC
O-220AC
50mVp-p
02-Apr-03
FES8JT
FES8GT
FES8AT
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PDF
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M48Z58
Abstract: M48Z58Y M4Z28-BR00SH SOH28
Text: M48Z58 M48Z58Y 5V, 64 Kbit 8 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION
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Original
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
28-LEAD
M48Z58
M48Z58Y
M4Z28-BR00SH
SOH28
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PDF
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M48Z35
Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION
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Original
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-LEAD
28-pin
M48Z35
M48Z35Y
M4Z28-BR00SH1
SOH28
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PDF
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M48Z35AV
Abstract: M48Z35AY M4Z28-BR00SH1 SOH28
Text: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK)
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Original
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M48Z35AY
M48Z35AV
M48Z35AY:
M48Z35AV:
28-LEAD
28-pin,
M48Z35AV
M48Z35AY
M4Z28-BR00SH1
SOH28
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PDF
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M48Z58
Abstract: M48Z58Y M4Z28-BR00SH SOH28
Text: M48Z58 M48Z58Y 5.0V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION
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Original
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
28-LEAD
PCDIP28
M48Z58
M48Z58Y
M4Z28-BR00SH
SOH28
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PDF
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TLMB2100
Abstract: TLMG2100 TLMO2100 TLMP2100 TLMS2100 TLMY2100 Water Level Indicator 555
Text: TLM.210. VISHAY Vishay Semiconductors MiniLED \ Description The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale,
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Original
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D-74025
02-Apr-03
TLMB2100
TLMG2100
TLMO2100
TLMP2100
TLMS2100
TLMY2100
Water Level Indicator 555
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PDF
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TLWR8900
Abstract: TLWY8900
Text: TLW.8900 VISHAY Vishay Semiconductors TELUX \ Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP
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Original
|
D-74025
02-Apr-03
TLWR8900
TLWY8900
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PDF
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48mAh
Abstract: M48Z35 M48Z35Y M4Z28-BR00SH1 SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION
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Original
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-LEAD
28-pin
48mAh
M48Z35
M48Z35Y
M4Z28-BR00SH1
SOH28
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PDF
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z129Y*
M48Z129V
32-pin
PMDIP32
M48Z129Y:
M48Z129V:
M48Z129V
M48Z129Y
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PDF
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z129Y*
M48Z129V
M48Z129Y:
M48Z129V:
M48Z129V
M48Z129Y
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PDF
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M48Z35
Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■
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Original
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M48Z35
M48Z35Y
28-pin
M48Z35:
M48Z35Y:
28-LEAD
PCDIP28
M48Z35
M48Z35Y
M4Z28-BR00SH1
SOH28
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PDF
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FES8AT
Abstract: No abstract text available
Text: FES8JT, FESF8JT, FESB8JT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Plastic Rectifiers Reverse Voltage 50 to 600V Forward Current 8.0 A Reverse Recovery Time 35 to 50ns ITO-220AC FESF8JT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)
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Original
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ITO-220AC
O-220AC
08-Apr-05
FES8AT
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PDF
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M48Z58
Abstract: M48Z58Y M4Z28-BR00SH SOH28
Text: M48Z58 M48Z58Y 5V, 64 Kbit 8 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION
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Original
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
28-LEAD
M48Z58
M48Z58Y
M4Z28-BR00SH
SOH28
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PDF
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SOH28
Abstract: M48Z35AV M48Z35AY M4Z28-BR00SH1
Text: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK)
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Original
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M48Z35AY
M48Z35AV
M48Z35AY:
M48Z35AV:
28-LEAD
28-pin,
SOH28
M48Z35AV
M48Z35AY
M4Z28-BR00SH1
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PDF
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M48Z35
Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION
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Original
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-LEAD
28-pin
M48Z35
M48Z35Y
M4Z28-BR00SH1
SOH28
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PDF
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A0526
Abstract: 3-221132-6 8218 DIE 2.5c-2v 02APR03
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 16 LTR DESCRIPTION RDW & DATE DWN 02APR03 REV PER 0S1 A — 0 5 2 6 - 0 2 APVD KW KW DL[ A USE PRO-CRIMPER II: 3 5 4 9 4 0 - 1
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OCR Scan
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0-O21,
27-9D
02APR03
31MAR2000
A0526
3-221132-6
8218 DIE
2.5c-2v
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST 47 AD LTR DESCRIPTION DATE REVISED PER EC 0 S 12- 04B 5- 02 A A A A A A D M A T E R IA L : H O U S IN G : CONTACT:
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OCR Scan
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02APR03
31MAR2000
31/JA
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PDF
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t2d03
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED PO R ALL C AMP C O P Y R IG H T 1471-9 2D 03 REV 3 1 MAR2Q0Û BY TY C O E LE C T R O N IC S C O R P O R A T IO N . P U B L IC A T IO N R IG H T S RESERVED. - - 1 2 R E V IS IO N S D IS T LOC J
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OCR Scan
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17N0V08
48POS
t2d03
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PDF
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amp tyco applicator
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D B A AMP 1 4 71-9 REV 31MAR2000 HA ALL RIGHTS RESERVED. —»— LOC DIST REVISIO NS AF 50 P LTR H 1 / 2\ 3 REV & DESCRIPTION DATE OWN APVD REDRWAN PER 0 G 3 A - 0 2 0 0 - 0 2
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OCR Scan
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31MAR2000
0G3A-0200-02
02APR03
02APR2003
amp tyco applicator
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PDF
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PTC SY
Abstract: SODIMM DDR2 Mechanical Dimensions 200POS
Text: THIS DRAWING IS U N P U BLIS H ED . COPYRIGHT 2003 2003. R E L E A S E D F O R P U B L IC A T IO N LOC A L L RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST R E V IS IO N S J LTR DESCRIPTION REVISED DATE ECR —0 6 —0 2 4 6 4 2 DWN 170C T06 APVD
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OCR Scan
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170CT06
UL94V-0
180DEG.
20EA/TRAY
31MAR2000
PTC SY
SODIMM DDR2 Mechanical Dimensions
200POS
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PDF
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