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    Untitled

    Abstract: No abstract text available
    Text: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • • • • • PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. To + 125°C with voltage derating. New extended range offerings.


    Original     		PDF EIA-481-1 178mm] 330mm] 535BAAC 02-Apr-03

    Untitled

    Abstract: No abstract text available
    Text: TLW.8600 VISHAY Vishay Semiconductors TELUX \ Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP


    Original     		PDF D-74025 02-Apr-03

    M48Z35

    Abstract: M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y 256Kbit 32Kbit M48Z35: M48Z35Y: 28-lead M48Z35 M48Z35Y SOH28

    M48Z35AV

    Abstract: M48Z35AY M4Z28-BR00SH1 SOH28
    Text: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ BATTERY LOW FLAG (BOK) ■ AUTOMATIC POWER-FAIL CHIP DESELECT


    Original     		PDF M48Z35AY M48Z35AV 28-pin, M48Z35AY: PCDIP28 M48Z35AV: 28-LEAD M48Z35AV M48Z35AY M4Z28-BR00SH1 SOH28

    FES8JT

    Abstract: FES8GT FES8AT
    Text: FES8JT, FESF8JT, FESB8JT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Plastic Rectifiers Reverse Voltage 50 to 600V Forward Current 8.0 A Reverse Recovery Time 35 to 50ns ITO-220AC FESF8JT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)


    Original     		PDF ITO-220AC O-220AC 50mVp-p 02-Apr-03 FES8JT FES8GT FES8AT

    M48Z58

    Abstract: M48Z58Y M4Z28-BR00SH SOH28
    Text: M48Z58 M48Z58Y 5V, 64 Kbit 8 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION


    Original     		PDF M48Z58 M48Z58Y M48Z58: M48Z58Y: 28-LEAD M48Z58 M48Z58Y M4Z28-BR00SH SOH28

    M48Z35

    Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-LEAD 28-pin M48Z35 M48Z35Y M4Z28-BR00SH1 SOH28

    M48Z35AV

    Abstract: M48Z35AY M4Z28-BR00SH1 SOH28
    Text: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK)


    Original     		PDF M48Z35AY M48Z35AV M48Z35AY: M48Z35AV: 28-LEAD 28-pin, M48Z35AV M48Z35AY M4Z28-BR00SH1 SOH28

    M48Z58

    Abstract: M48Z58Y M4Z28-BR00SH SOH28
    Text: M48Z58 M48Z58Y 5.0V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION


    Original     		PDF M48Z58 M48Z58Y M48Z58: M48Z58Y: 28-LEAD PCDIP28 M48Z58 M48Z58Y M4Z28-BR00SH SOH28

    TLMB2100

    Abstract: TLMG2100 TLMO2100 TLMP2100 TLMS2100 TLMY2100 Water Level Indicator 555
    Text: TLM.210. VISHAY Vishay Semiconductors MiniLED \ Description The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale,


    Original     		PDF D-74025 02-Apr-03 TLMB2100 TLMG2100 TLMO2100 TLMP2100 TLMS2100 TLMY2100 Water Level Indicator 555

    TLWR8900

    Abstract: TLWY8900
    Text: TLW.8900 VISHAY Vishay Semiconductors TELUX \ Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP


    Original     		PDF D-74025 02-Apr-03 TLWR8900 TLWY8900

    48mAh

    Abstract: M48Z35 M48Z35Y M4Z28-BR00SH1 SOH28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-LEAD 28-pin 48mAh M48Z35 M48Z35Y M4Z28-BR00SH1 SOH28

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y* M48Z129V 32-pin PMDIP32 M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    M48Z129V

    Abstract: M48Z129Y
    Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z129Y* M48Z129V M48Z129Y: M48Z129V: M48Z129V M48Z129Y

    M48Z35

    Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■


    Original     		PDF M48Z35 M48Z35Y 28-pin M48Z35: M48Z35Y: 28-LEAD PCDIP28 M48Z35 M48Z35Y M4Z28-BR00SH1 SOH28

    FES8AT

    Abstract: No abstract text available
    Text: FES8JT, FESF8JT, FESB8JT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Plastic Rectifiers Reverse Voltage 50 to 600V Forward Current 8.0 A Reverse Recovery Time 35 to 50ns ITO-220AC FESF8JT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)


    Original     		PDF ITO-220AC O-220AC 08-Apr-05 FES8AT

    M48Z58

    Abstract: M48Z58Y M4Z28-BR00SH SOH28
    Text: M48Z58 M48Z58Y 5V, 64 Kbit 8 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT AND WRITE PROTECTION


    Original     		PDF M48Z58 M48Z58Y M48Z58: M48Z58Y: 28-LEAD M48Z58 M48Z58Y M4Z28-BR00SH SOH28

    SOH28

    Abstract: M48Z35AV M48Z35AY M4Z28-BR00SH1
    Text: M48Z35AY M48Z35AV 5.0 or 3.3V, 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK)


    Original     		PDF M48Z35AY M48Z35AV M48Z35AY: M48Z35AV: 28-LEAD 28-pin, SOH28 M48Z35AV M48Z35AY M4Z28-BR00SH1

    M48Z35

    Abstract: M48Z35Y M4Z28-BR00SH1 SOH28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-LEAD 28-pin M48Z35 M48Z35Y M4Z28-BR00SH1 SOH28

    A0526

    Abstract: 3-221132-6 8218 DIE 2.5c-2v 02APR03
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 16 LTR DESCRIPTION RDW & DATE DWN 02APR03 REV PER 0S1 A — 0 5 2 6 - 0 2 APVD KW KW DL[ A USE PRO-CRIMPER II: 3 5 4 9 4 0 - 1


    OCR Scan     		PDF 0-O21, 27-9D 02APR03 31MAR2000 A0526 3-221132-6 8218 DIE 2.5c-2v

    Untitled

    Abstract: No abstract text available
    Text: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST 47 AD LTR DESCRIPTION DATE REVISED PER EC 0 S 12- 04B 5- 02 A A A A A A D M A T E R IA L : H O U S IN G : CONTACT:


    OCR Scan     		PDF 02APR03 31MAR2000 31/JA

    t2d03

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED PO R ALL C AMP C O P Y R IG H T 1471-9 2D 03 REV 3 1 MAR2Q0Û BY TY C O E LE C T R O N IC S C O R P O R A T IO N . P U B L IC A T IO N R IG H T S RESERVED. - - 1 2 R E V IS IO N S D IS T LOC J


    OCR Scan     		PDF 17N0V08 48POS t2d03

    amp tyco applicator

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D B A AMP 1 4 71-9 REV 31MAR2000 HA ALL RIGHTS RESERVED. —»— LOC DIST REVISIO NS AF 50 P LTR H 1 / 2\ 3 REV & DESCRIPTION DATE OWN APVD REDRWAN PER 0 G 3 A - 0 2 0 0 - 0 2


    OCR Scan     		PDF 31MAR2000 0G3A-0200-02 02APR03 02APR2003 amp tyco applicator

    PTC SY

    Abstract: SODIMM DDR2 Mechanical Dimensions 200POS
    Text: THIS DRAWING IS U N P U BLIS H ED . COPYRIGHT 2003 2003. R E L E A S E D F O R P U B L IC A T IO N LOC A L L RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST R E V IS IO N S J LTR DESCRIPTION REVISED DATE ECR —0 6 —0 2 4 6 4 2 DWN 170C T06 APVD


    OCR Scan     		PDF 170CT06 UL94V-0 180DEG. 20EA/TRAY 31MAR2000 PTC SY SODIMM DDR2 Mechanical Dimensions 200POS