Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 175 3 3.35 7.2 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA1118-02 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

IGCT in switching operation

Abstract: kn 18
Contextual Info: Key Parameters VRRM = 5500 IFAVM = 180 IFRMS = 280 IFSM = 3 VF0 = 3.05 rF = 7.2 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA 1118-02 Feb. 99 Features • Patented free-floating technology

Contextual Info: Key Parameters VRRM = 5500 IFAVM = 180 IFRMS = 280 IFSM = 3 VF0 = 3.05 rF = 7.20 VDClink = 3300 Fast Recovery Diode for IGCT applications V A A kA V 5SDF 02D6004 Preliminary mΩ V Doc. No. 5SYA 1118-01 July 98 Features • Patented free-floating silicon technology

switching diode 3.381

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 5500 175 3x103 3.35 7.2 3300 V A A V mΩ V Fast Recovery Diode 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA1118-02 Okt. 02 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating

IGCT in switching operation

Contextual Info: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 5500 180 280 3 3.05 7.2 3300 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA 1118-02 Feb. 99 • • • • • Patented free-floating technology Industry standard housing

IGCT thyristor ABB

Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

IGCT thyristor ABB

Abstract: HFBR-2528 A115 B115 HFBR-1528 MTA-156 VT115 IGCT thyristor current max igct abb SF 7510
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 900 7.5x103 1.65 2 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6010 PRELIMINARY Doc. No. 5SYA1226-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

FSV 052

Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.