Untitled
Abstract: No abstract text available
Text: ADV MICRO L.4E D MEMORY • 02S7Saa 0Q321D1 ÛÛO ■ PRELIMINARY a Advanced Micro Devices A m 2 7 L V 0 1 0 /A m 2 7 L V 0 1 O B 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V
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02S7Saa
0Q321D1
7341A-11
Am27LV010/Am27LV01
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AMD a 462 socket pinout
Abstract: No abstract text available
Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption
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02s7saa
Am28F512
32-pin
T-90-10
AMD a 462 socket pinout
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Am29F040
Abstract: No abstract text available
Text: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands
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Am29F040
32-pin
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PEB 2261
Abstract: 0034D A03407
Text: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current
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Am28F020A
32-Pin
-32-pin
PEB 2261
0034D
A03407
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