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    02P MARKING Search Results

    02P MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    02P MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LRC02P

    Abstract: Phycomp 2350 yageo Phycomp 2350 1206 iec 60068 2 29 LRC01P
    Text: DATA SHEET LOW-OHMIC POWER CHIP RESISTORS LRC01P/02P 5%; 1%, 0.5W Product Specification – Jul 29, 2003 V.0 size 1206 Phycomp Product specification Low-ohmic power chip resistors size 1206 LRC01P/02P 5%; 1%, 0.5W FEATURES • Reduced size of final equipment


    Original     		PDF LRC01P/02P 10-6/K LRC02P Phycomp 2350 yageo Phycomp 2350 1206 iec 60068 2 29 LRC01P

    ZY180L

    Abstract: 1600 v mosfet
    Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode Preliminary data D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C


    Original     		PDF 1600-02P 14Source 20090924a ZY180L 1600 v mosfet

    Untitled

    Abstract: No abstract text available
    Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mΩ max. N-Channel Enhancement Mode D S G KS D KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900


    Original     		PDF 1600-02P 20100302b

    ZY180L

    Abstract: VMO 1600-02P 1600-02P
    Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C 1900 1600


    Original     		PDF 1600-02P 14Source 20100302b ZY180L VMO 1600-02P 1600-02P

    1600-02P

    Abstract: 1600 v mosfet VMO 1600-02P
    Text: VMO 1600-02P PolarHTTM Module VDSS = 200 V ID80 = 1600 A RDS on = 1.7 mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 200 V ± 20 V 1900 1600 A A ID25 ID80 TC = 25°C TC = 80°C IF25


    Original     		PDF 1600-02P 14Source 20100302b 1600-02P 1600 v mosfet VMO 1600-02P

    2N7002 MARKING 702

    Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
    Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82


    Original     		PDF OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 2N7002 MARKING 702 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002

    2N7002 PHILIPS MARKING

    Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table.


    Original     		PDF OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 2N7002 PHILIPS MARKING 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING

    AXICOM IM03

    Abstract: AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I
    Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR


    Original     		PDF IM48GR IM61GR, IM42PNS IM41X, IMF61, IMB41C, IMB42C IM46CGR, IMF68HR 28APR2010 AXICOM IM03 AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I

    7168-m

    Abstract: IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P
    Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR


    Original     		PDF IM48GR IM61GR, IM42PNS IM41X, IMF61, IMB41C, IMB42C IM46CGR, IMF68HR 28APR2010 7168-m IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P

    H05V-k 0.75

    Abstract: EN 60998-1 H05VK H05V-K din 17670 8-928247-2
    Text: METRIC Catalogue 1654742 Rast 5 Dimensions are millimetres over inches Revised 5-04 Table of Contents AMP multifitting Mark II Introduction ……………………………………………………………………………2002 Direct and Indirect Connection 5.0mm Centerline…………………………………2003


    Original     		PDF

    KBPC40

    Abstract: KBPC50 50p bridge rectifier
    Text: KBPC40, 50P/W SERIES W TE PO WE R SEM IC O ND UC TO R S 40, 50A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for Maximum Heat Dissipation Case to Terminal Isolation Voltage 2500V


    Original     		PDF KBPC40, 50P/W E157705 MIL-STD-202, KBPC40 KBPC50 50p bridge rectifier

    Untitled

    Abstract: No abstract text available
    Text: WTE POWER SEMICONDUCTORS KBPC15, 25, 35P/W SERIES 15, 25, 35A HIGH CURRENT BRIDGE RECTIFIER Features ! Diffused Junction A A ! ! ! Low Reverse Leakage Current C Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation


    Original     		PDF KBPC15, 35P/W E157705 MIL-STD-202,

    02p marking

    Abstract: No abstract text available
    Text: KBPC40P SERIES 40A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance


    Original     		PDF KBPC40P E157705 02p marking

    Untitled

    Abstract: No abstract text available
    Text: KBPC40P SERIES WTE POWER SEMICONDUCTORS Pb 40A HIGH CURRENT SINGLE-PHASE BRIDGE RECTIFIER Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D  Case to Terminal Isolation Voltage 2500V


    Original     		PDF KBPC40P E157705

    kbpc

    Abstract: KBPC15 KBPC1500P KBPC1500PW KBPC1501P KBPC1501PW KBPC1502P KBPC1502PW KBPC1504P KBPC15P
    Text: KBPC15P SERIES WTE POWER SEMICONDUCTORS Pb 15A SINGLE-PHASE BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D ! Case to Terminal Isolation Voltage 2500V


    Original     		PDF KBPC15P E157705 kbpc KBPC15 KBPC1500P KBPC1500PW KBPC1501P KBPC1501PW KBPC1502P KBPC1502PW KBPC1504P

    KBPC1000P

    Abstract: No abstract text available
    Text: KBPC10P SERIES WTE POWER SEMICONDUCTORS Pb 10A SINGLE-PHASE BRIDGE RECTIFIER Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D  Case to Terminal Isolation Voltage 2500V


    Original     		PDF KBPC10P E157705 KBPC1000P

    KBPC2508PW

    Abstract: KBPC25 KBPC2500P KBPC2500PW KBPC2501P KBPC2501PW KBPC2502P KBPC2502PW KBPC2504P KBPC25P
    Text: KBPC25P SERIES WTE POWER SEMICONDUCTORS Pb 25A SINGLE-PHASE BRIDGE RECTIFIER Features ! Diffused Junction A ! ! ! Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation D ! Case to Terminal Isolation Voltage 2500V


    Original     		PDF KBPC25P E157705 KBPC2508PW KBPC25 KBPC2500P KBPC2500PW KBPC2501P KBPC2501PW KBPC2502P KBPC2502PW KBPC2504P

    Untitled

    Abstract: No abstract text available
    Text: KBPC50P SERIES 50A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance


    Original     		PDF KBPC50P E157705

    Untitled

    Abstract: No abstract text available
    Text: KBPC35P SERIES 35A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features  Diffused Junction A    Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance


    Original     		PDF KBPC35P E157705

    Philips MARKING CODE

    Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
    Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p


    OCR Scan     		PDF OT323 BSN20 BSN20W BSS84 BSS87 BSS123 BSS192 BST80 BST82 BST84 Philips MARKING CODE sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


    OCR Scan     		PDF OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174

    PXTA14

    Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
    Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.


    OCR Scan     		PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401

    02p SMD TRANSISTOR

    Abstract: No abstract text available
    Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application


    OCR Scan     		PDF bbS3131 BST82 175DSon 02p SMD TRANSISTOR

    02p SMD TRANSISTOR

    Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
    Text: BST82 A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r telephone ringer and for application


    OCR Scan     		PDF BST82 BST82 RDSonat25Â 02p SMD TRANSISTOR BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p